NL8600786A - Ladingsgekoppelde inrichting. - Google Patents

Ladingsgekoppelde inrichting. Download PDF

Info

Publication number
NL8600786A
NL8600786A NL8600786A NL8600786A NL8600786A NL 8600786 A NL8600786 A NL 8600786A NL 8600786 A NL8600786 A NL 8600786A NL 8600786 A NL8600786 A NL 8600786A NL 8600786 A NL8600786 A NL 8600786A
Authority
NL
Netherlands
Prior art keywords
charge
electrodes
transport channel
charge transport
coupled device
Prior art date
Application number
NL8600786A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8600786A priority Critical patent/NL8600786A/nl
Priority to DE8787200370T priority patent/DE3781295T2/de
Priority to EP87200370A priority patent/EP0239151B1/de
Priority to AU70606/87A priority patent/AU593080B2/en
Priority to CA000533094A priority patent/CA1278863C/en
Priority to JP62071910A priority patent/JPS62237761A/ja
Publication of NL8600786A publication Critical patent/NL8600786A/nl
Priority to US07/274,653 priority patent/US4878102A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1091—Substrate region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
NL8600786A 1986-03-27 1986-03-27 Ladingsgekoppelde inrichting. NL8600786A (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL8600786A NL8600786A (nl) 1986-03-27 1986-03-27 Ladingsgekoppelde inrichting.
DE8787200370T DE3781295T2 (de) 1986-03-27 1987-03-02 Ladungsverschiebeanordnung.
EP87200370A EP0239151B1 (de) 1986-03-27 1987-03-02 Ladungsverschiebeanordnung
AU70606/87A AU593080B2 (en) 1986-03-27 1987-03-25 Charge-coupled device
CA000533094A CA1278863C (en) 1986-03-27 1987-03-26 Charge-coupled device
JP62071910A JPS62237761A (ja) 1986-03-27 1987-03-27 電荷結合装置
US07/274,653 US4878102A (en) 1986-03-27 1988-11-18 Charge-coupled device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8600786A NL8600786A (nl) 1986-03-27 1986-03-27 Ladingsgekoppelde inrichting.
NL8600786 1986-03-27

Publications (1)

Publication Number Publication Date
NL8600786A true NL8600786A (nl) 1987-10-16

Family

ID=19847783

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8600786A NL8600786A (nl) 1986-03-27 1986-03-27 Ladingsgekoppelde inrichting.

Country Status (7)

Country Link
US (1) US4878102A (de)
EP (1) EP0239151B1 (de)
JP (1) JPS62237761A (de)
AU (1) AU593080B2 (de)
CA (1) CA1278863C (de)
DE (1) DE3781295T2 (de)
NL (1) NL8600786A (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01171361A (ja) * 1987-12-25 1989-07-06 Fuji Xerox Co Ltd 原稿読取装置
US5252509A (en) * 1988-03-15 1993-10-12 Texas Instruments Incorporated Ccd imager responsive to long wavelength radiation
US5159419A (en) * 1988-03-15 1992-10-27 Texas Instruments Incorporated CCD imager responsive to long wavelength radiation
JP2517375B2 (ja) * 1988-12-19 1996-07-24 三菱電機株式会社 固体撮像装置および該装置に用いられる電荷転送装置ならびにその製造方法
JPH0355854A (ja) * 1989-07-25 1991-03-11 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US5223726A (en) * 1989-07-25 1993-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device for charge transfer device
US5173756A (en) * 1990-01-05 1992-12-22 International Business Machines Corporation Trench charge-coupled device
JP2825004B2 (ja) * 1991-02-08 1998-11-18 インターナショナル・ビジネス・マシーンズ・コーポレーション 側壁電荷結合撮像素子及びその製造方法
EP0512607B1 (de) * 1991-05-03 1997-07-16 Koninklijke Philips Electronics N.V. Verfahren zur Herstellung eines Halbleiterbauelements mit Ionenimplantierung
JP2816063B2 (ja) * 1992-10-06 1998-10-27 松下電器産業株式会社 電荷転送装置
US5981988A (en) * 1996-04-26 1999-11-09 The Regents Of The University Of California Three-dimensional charge coupled device
FR2852770B1 (fr) * 2003-03-21 2005-05-27 Capteur d'image a cycle de lecture rapide
JP2005268476A (ja) * 2004-03-18 2005-09-29 Fuji Film Microdevices Co Ltd 光電変換膜積層型固体撮像装置
US7859026B2 (en) * 2006-03-16 2010-12-28 Spansion Llc Vertical semiconductor device
GB2468668B (en) * 2009-03-17 2014-07-16 E2V Tech Uk Ltd CCD imaging array with extended dynamic range
KR102401724B1 (ko) * 2015-04-30 2022-05-25 삼성디스플레이 주식회사 미세 전극 형성 방법
FR3108784B1 (fr) * 2020-03-30 2022-04-01 St Microelectronics Crolles 2 Sas Dispositif à couplage de charges

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906543A (en) * 1971-12-23 1975-09-16 Bell Telephone Labor Inc Solid state imaging apparatus employing charge transfer devices
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
DE2412345A1 (de) * 1974-03-14 1975-09-18 Siemens Ag Ladungsverschiebeanordnung
JPS5120680A (ja) * 1974-08-13 1976-02-19 Fujitsu Ltd Denkatensosochi
US4047215A (en) * 1975-01-31 1977-09-06 Texas Instruments Incorporated Uniphase charge coupled devices
DE2646301C3 (de) * 1975-10-31 1981-01-15 Fujitsu Ltd., Kawasaki, Kanagawa (Japan) Ladungsgekoppeltes Halbleiterbauelement
US4252579A (en) * 1979-05-07 1981-02-24 International Business Machines Corporation Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition
US4450464A (en) * 1980-07-23 1984-05-22 Matsushita Electric Industrial Co., Ltd. Solid state area imaging apparatus having a charge transfer arrangement
DE3418778A1 (de) * 1984-05-19 1985-11-21 Josef Dr. 8048 Haimhausen Kemmer Ccd-halbleiterbauelement
JPS61161012A (ja) * 1985-01-10 1986-07-21 Matsushita Electronics Corp Ｃｃｄシフトレジスタ
JP3072670B2 (ja) * 1992-02-28 2000-07-31 味の素株式会社 ガラクトオリゴ糖の製造方法

Also Published As

Publication number Publication date
CA1278863C (en) 1991-01-08
EP0239151A1 (de) 1987-09-30
JPS62237761A (ja) 1987-10-17
EP0239151B1 (de) 1992-08-26
DE3781295D1 (de) 1992-10-01
AU593080B2 (en) 1990-02-01
DE3781295T2 (de) 1993-03-18
AU7060687A (en) 1987-10-01
US4878102A (en) 1989-10-31

Similar Documents

Publication Publication Date Title
NL8600786A (nl) Ladingsgekoppelde inrichting.
US5334868A (en) Sidewall charge-coupled device with trench isolation
EP0574390B1 (de) Bildsensor
NL8000998A (nl) Vaste stof opneemcamera met een halfgeleidende photogevoelige trefplaat.
JP3200436B2 (ja) Ｃｃｄ撮像器及びその駆動方法
CA1128649A (en) Imaging devices
JP2686914B2 (ja) 線形固体撮像素子
JPH06500431A (ja) フォトダイオードとｃｃｄエレメントとの間に転送ゲートを有するイメージセンサ
NL8105920A (nl) Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
JPS58138187A (ja) 固体イメ−ジセンサ
JP2001111027A (ja) 電荷転送路およびそれを用いた固体撮像装置
NL8700282A (nl) Ladingsgekoppelde inrichting en camera voorzien van een dergelijke inrichting.
US5359213A (en) Charge transfer device and solid state image sensor using the same
NL8301629A (nl) Halfgeleiderinrichting.
US4974043A (en) Solid-state image sensor
US4757365A (en) CCD image sensor with substantially identical integration regions
JP2816063B2 (ja) 電荷転送装置
US4654683A (en) Blooming control in CCD image sensors
EP0132870B1 (de) Strahlungsempfindliche Halbleitervorrichtung
US4654682A (en) Antiblooming image sensor device
US5449931A (en) Charge coupled imaging device having multilayer gate electrode wiring
US5001530A (en) Infrared Schottky junction charge coupled device
EP0625800B1 (de) Ladungsgekoppelte Bildaufnahmeanordnung
NL8000999A (nl) Ladingsgekoppelde beeldopneeminrichting en werkwijze ter vervaardiging daarvan.
NL9000776A (nl) Werkwijze ter vervaardiging van een ladingsgekoppelde beeldopneeminrichting, alsmede beeldopneeminrichting verkregen door deze werkwijze.

Legal Events

Date Code Title Description
A1B A search report has been drawn up
BV The patent application has lapsed