NL8600786A - Ladingsgekoppelde inrichting. - Google Patents
Ladingsgekoppelde inrichting. Download PDFInfo
- Publication number
- NL8600786A NL8600786A NL8600786A NL8600786A NL8600786A NL 8600786 A NL8600786 A NL 8600786A NL 8600786 A NL8600786 A NL 8600786A NL 8600786 A NL8600786 A NL 8600786A NL 8600786 A NL8600786 A NL 8600786A
- Authority
- NL
- Netherlands
- Prior art keywords
- charge
- electrodes
- transport channel
- charge transport
- coupled device
- Prior art date
Links
- 238000003860 storage Methods 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 20
- 230000015556 catabolic process Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 108091006146 Channels Proteins 0.000 description 94
- 239000000758 substrate Substances 0.000 description 21
- 238000001444 catalytic combustion detection Methods 0.000 description 11
- 230000008901 benefit Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000005036 potential barrier Methods 0.000 description 7
- 238000002513 implantation Methods 0.000 description 6
- 206010034972 Photosensitivity reaction Diseases 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000036211 photosensitivity Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000015654 memory Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 3
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1091—Substrate region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8600786A NL8600786A (nl) | 1986-03-27 | 1986-03-27 | Ladingsgekoppelde inrichting. |
DE8787200370T DE3781295T2 (de) | 1986-03-27 | 1987-03-02 | Ladungsverschiebeanordnung. |
EP87200370A EP0239151B1 (de) | 1986-03-27 | 1987-03-02 | Ladungsverschiebeanordnung |
AU70606/87A AU593080B2 (en) | 1986-03-27 | 1987-03-25 | Charge-coupled device |
CA000533094A CA1278863C (en) | 1986-03-27 | 1987-03-26 | Charge-coupled device |
JP62071910A JPS62237761A (ja) | 1986-03-27 | 1987-03-27 | 電荷結合装置 |
US07/274,653 US4878102A (en) | 1986-03-27 | 1988-11-18 | Charge-coupled device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8600786A NL8600786A (nl) | 1986-03-27 | 1986-03-27 | Ladingsgekoppelde inrichting. |
NL8600786 | 1986-03-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8600786A true NL8600786A (nl) | 1987-10-16 |
Family
ID=19847783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8600786A NL8600786A (nl) | 1986-03-27 | 1986-03-27 | Ladingsgekoppelde inrichting. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4878102A (de) |
EP (1) | EP0239151B1 (de) |
JP (1) | JPS62237761A (de) |
AU (1) | AU593080B2 (de) |
CA (1) | CA1278863C (de) |
DE (1) | DE3781295T2 (de) |
NL (1) | NL8600786A (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01171361A (ja) * | 1987-12-25 | 1989-07-06 | Fuji Xerox Co Ltd | 原稿読取装置 |
US5252509A (en) * | 1988-03-15 | 1993-10-12 | Texas Instruments Incorporated | Ccd imager responsive to long wavelength radiation |
US5159419A (en) * | 1988-03-15 | 1992-10-27 | Texas Instruments Incorporated | CCD imager responsive to long wavelength radiation |
JP2517375B2 (ja) * | 1988-12-19 | 1996-07-24 | 三菱電機株式会社 | 固体撮像装置および該装置に用いられる電荷転送装置ならびにその製造方法 |
JPH0355854A (ja) * | 1989-07-25 | 1991-03-11 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US5223726A (en) * | 1989-07-25 | 1993-06-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device for charge transfer device |
US5173756A (en) * | 1990-01-05 | 1992-12-22 | International Business Machines Corporation | Trench charge-coupled device |
JP2825004B2 (ja) * | 1991-02-08 | 1998-11-18 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 側壁電荷結合撮像素子及びその製造方法 |
EP0512607B1 (de) * | 1991-05-03 | 1997-07-16 | Koninklijke Philips Electronics N.V. | Verfahren zur Herstellung eines Halbleiterbauelements mit Ionenimplantierung |
JP2816063B2 (ja) * | 1992-10-06 | 1998-10-27 | 松下電器産業株式会社 | 電荷転送装置 |
US5981988A (en) * | 1996-04-26 | 1999-11-09 | The Regents Of The University Of California | Three-dimensional charge coupled device |
FR2852770B1 (fr) * | 2003-03-21 | 2005-05-27 | Capteur d'image a cycle de lecture rapide | |
JP2005268476A (ja) * | 2004-03-18 | 2005-09-29 | Fuji Film Microdevices Co Ltd | 光電変換膜積層型固体撮像装置 |
US7859026B2 (en) * | 2006-03-16 | 2010-12-28 | Spansion Llc | Vertical semiconductor device |
GB2468668B (en) * | 2009-03-17 | 2014-07-16 | E2V Tech Uk Ltd | CCD imaging array with extended dynamic range |
KR102401724B1 (ko) * | 2015-04-30 | 2022-05-25 | 삼성디스플레이 주식회사 | 미세 전극 형성 방법 |
FR3108784B1 (fr) * | 2020-03-30 | 2022-04-01 | St Microelectronics Crolles 2 Sas | Dispositif à couplage de charges |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3906543A (en) * | 1971-12-23 | 1975-09-16 | Bell Telephone Labor Inc | Solid state imaging apparatus employing charge transfer devices |
NL181766C (nl) * | 1973-03-19 | 1987-10-16 | Philips Nv | Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen. |
DE2412345A1 (de) * | 1974-03-14 | 1975-09-18 | Siemens Ag | Ladungsverschiebeanordnung |
JPS5120680A (ja) * | 1974-08-13 | 1976-02-19 | Fujitsu Ltd | Denkatensosochi |
US4047215A (en) * | 1975-01-31 | 1977-09-06 | Texas Instruments Incorporated | Uniphase charge coupled devices |
DE2646301C3 (de) * | 1975-10-31 | 1981-01-15 | Fujitsu Ltd., Kawasaki, Kanagawa (Japan) | Ladungsgekoppeltes Halbleiterbauelement |
US4252579A (en) * | 1979-05-07 | 1981-02-24 | International Business Machines Corporation | Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition |
US4450464A (en) * | 1980-07-23 | 1984-05-22 | Matsushita Electric Industrial Co., Ltd. | Solid state area imaging apparatus having a charge transfer arrangement |
DE3418778A1 (de) * | 1984-05-19 | 1985-11-21 | Josef Dr. 8048 Haimhausen Kemmer | Ccd-halbleiterbauelement |
JPS61161012A (ja) * | 1985-01-10 | 1986-07-21 | Matsushita Electronics Corp | Ccdシフトレジスタ |
JP3072670B2 (ja) * | 1992-02-28 | 2000-07-31 | 味の素株式会社 | ガラクトオリゴ糖の製造方法 |
-
1986
- 1986-03-27 NL NL8600786A patent/NL8600786A/nl not_active Application Discontinuation
-
1987
- 1987-03-02 DE DE8787200370T patent/DE3781295T2/de not_active Expired - Fee Related
- 1987-03-02 EP EP87200370A patent/EP0239151B1/de not_active Expired
- 1987-03-25 AU AU70606/87A patent/AU593080B2/en not_active Ceased
- 1987-03-26 CA CA000533094A patent/CA1278863C/en not_active Expired - Lifetime
- 1987-03-27 JP JP62071910A patent/JPS62237761A/ja active Pending
-
1988
- 1988-11-18 US US07/274,653 patent/US4878102A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA1278863C (en) | 1991-01-08 |
EP0239151A1 (de) | 1987-09-30 |
JPS62237761A (ja) | 1987-10-17 |
EP0239151B1 (de) | 1992-08-26 |
DE3781295D1 (de) | 1992-10-01 |
AU593080B2 (en) | 1990-02-01 |
DE3781295T2 (de) | 1993-03-18 |
AU7060687A (en) | 1987-10-01 |
US4878102A (en) | 1989-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BV | The patent application has lapsed |