FR3108784B1 - Dispositif à couplage de charges - Google Patents
Dispositif à couplage de charges Download PDFInfo
- Publication number
- FR3108784B1 FR3108784B1 FR2003147A FR2003147A FR3108784B1 FR 3108784 B1 FR3108784 B1 FR 3108784B1 FR 2003147 A FR2003147 A FR 2003147A FR 2003147 A FR2003147 A FR 2003147A FR 3108784 B1 FR3108784 B1 FR 3108784B1
- Authority
- FR
- France
- Prior art keywords
- electrodes
- coupled device
- longitudinal
- walls
- charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000000149 penetrating effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/711—Time delay and integration [TDI] registers; TDI shift registers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Dispositif à couplage de charges La présente description concerne un dispositif (100) à couplage de charges comprenant : un réseau d'électrodes isolées (123) pénétrant verticalement dans un substrat semiconducteur (101), le réseau comprenant des rangées d'électrodes longitudinales (123) et transversales alternées, chaque extrémité d'une électrodes longitudinale (123) d'une rangée étant en regard et séparée d'une portion d'une électrode transversale adjacentes de ladite rangée ; et des murs (126) d'isolation électrique parallèles entre eux et aux électrodes longitudinales, les murs (126) pénétrant verticalement dans le substrat (101) plus profondément que les électrodes longitudinales (123) et au moins deux rangées adjacentes d'électrodes (123) étant disposées entre chaque deux murs (126) successifs. Figure pour l'abrégé : Fig. 7
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2003147A FR3108784B1 (fr) | 2020-03-30 | 2020-03-30 | Dispositif à couplage de charges |
US17/199,779 US11527570B2 (en) | 2020-03-30 | 2021-03-12 | Charge-coupled device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2003147 | 2020-03-30 | ||
FR2003147A FR3108784B1 (fr) | 2020-03-30 | 2020-03-30 | Dispositif à couplage de charges |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3108784A1 FR3108784A1 (fr) | 2021-10-01 |
FR3108784B1 true FR3108784B1 (fr) | 2022-04-01 |
Family
ID=71094520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2003147A Active FR3108784B1 (fr) | 2020-03-30 | 2020-03-30 | Dispositif à couplage de charges |
Country Status (2)
Country | Link |
---|---|
US (1) | US11527570B2 (fr) |
FR (1) | FR3108784B1 (fr) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8600786A (nl) * | 1986-03-27 | 1987-10-16 | Philips Nv | Ladingsgekoppelde inrichting. |
US5055900A (en) * | 1989-10-11 | 1991-10-08 | The Trustees Of Columbia University In The City Of New York | Trench-defined charge-coupled device |
US6586784B1 (en) * | 2002-10-02 | 2003-07-01 | Eastman Kodak Company | Accumulation mode clocking of a charge-coupled device |
FR2947382B1 (fr) | 2009-06-24 | 2011-09-09 | St Microelectronics Crolles 2 | Capteur d'images a transfert de charges a deux phases. |
-
2020
- 2020-03-30 FR FR2003147A patent/FR3108784B1/fr active Active
-
2021
- 2021-03-12 US US17/199,779 patent/US11527570B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR3108784A1 (fr) | 2021-10-01 |
US11527570B2 (en) | 2022-12-13 |
US20210305311A1 (en) | 2021-09-30 |
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Legal Events
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Year of fee payment: 2 |
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PLSC | Publication of the preliminary search report |
Effective date: 20211001 |
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PLFP | Fee payment |
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Year of fee payment: 5 |