FR3108784B1 - Dispositif à couplage de charges - Google Patents

Dispositif à couplage de charges Download PDF

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Publication number
FR3108784B1
FR3108784B1 FR2003147A FR2003147A FR3108784B1 FR 3108784 B1 FR3108784 B1 FR 3108784B1 FR 2003147 A FR2003147 A FR 2003147A FR 2003147 A FR2003147 A FR 2003147A FR 3108784 B1 FR3108784 B1 FR 3108784B1
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FR
France
Prior art keywords
electrodes
coupled device
longitudinal
walls
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2003147A
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English (en)
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FR3108784A1 (fr
Inventor
Francois Roy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR2003147A priority Critical patent/FR3108784B1/fr
Priority to US17/199,779 priority patent/US11527570B2/en
Publication of FR3108784A1 publication Critical patent/FR3108784A1/fr
Application granted granted Critical
Publication of FR3108784B1 publication Critical patent/FR3108784B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14806Structural or functional details thereof
    • H01L27/14812Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1463Pixel isolation structures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/711Time delay and integration [TDI] registers; TDI shift registers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1464Back illuminated imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Dispositif à couplage de charges La présente description concerne un dispositif (100) à couplage de charges comprenant : un réseau d'électrodes isolées (123) pénétrant verticalement dans un substrat semiconducteur (101), le réseau comprenant des rangées d'électrodes longitudinales (123) et transversales alternées, chaque extrémité d'une électrodes longitudinale (123) d'une rangée étant en regard et séparée d'une portion d'une électrode transversale adjacentes de ladite rangée ; et des murs (126) d'isolation électrique parallèles entre eux et aux électrodes longitudinales, les murs (126) pénétrant verticalement dans le substrat (101) plus profondément que les électrodes longitudinales (123) et au moins deux rangées adjacentes d'électrodes (123) étant disposées entre chaque deux murs (126) successifs. Figure pour l'abrégé : Fig. 7
FR2003147A 2020-03-30 2020-03-30 Dispositif à couplage de charges Active FR3108784B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR2003147A FR3108784B1 (fr) 2020-03-30 2020-03-30 Dispositif à couplage de charges
US17/199,779 US11527570B2 (en) 2020-03-30 2021-03-12 Charge-coupled device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2003147 2020-03-30
FR2003147A FR3108784B1 (fr) 2020-03-30 2020-03-30 Dispositif à couplage de charges

Publications (2)

Publication Number Publication Date
FR3108784A1 FR3108784A1 (fr) 2021-10-01
FR3108784B1 true FR3108784B1 (fr) 2022-04-01

Family

ID=71094520

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2003147A Active FR3108784B1 (fr) 2020-03-30 2020-03-30 Dispositif à couplage de charges

Country Status (2)

Country Link
US (1) US11527570B2 (fr)
FR (1) FR3108784B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8600786A (nl) * 1986-03-27 1987-10-16 Philips Nv Ladingsgekoppelde inrichting.
US5055900A (en) * 1989-10-11 1991-10-08 The Trustees Of Columbia University In The City Of New York Trench-defined charge-coupled device
US6586784B1 (en) * 2002-10-02 2003-07-01 Eastman Kodak Company Accumulation mode clocking of a charge-coupled device
FR2947382B1 (fr) 2009-06-24 2011-09-09 St Microelectronics Crolles 2 Capteur d'images a transfert de charges a deux phases.

Also Published As

Publication number Publication date
FR3108784A1 (fr) 2021-10-01
US11527570B2 (en) 2022-12-13
US20210305311A1 (en) 2021-09-30

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