KR910002243A - 고체촬상소자의 구동방법 - Google Patents

고체촬상소자의 구동방법 Download PDF

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Publication number
KR910002243A
KR910002243A KR1019900008215A KR900008215A KR910002243A KR 910002243 A KR910002243 A KR 910002243A KR 1019900008215 A KR1019900008215 A KR 1019900008215A KR 900008215 A KR900008215 A KR 900008215A KR 910002243 A KR910002243 A KR 910002243A
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South Korea
Prior art keywords
photocharges
region
semiconductor substrate
driving
diffusion region
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KR1019900008215A
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English (en)
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KR100276971B1 (ko
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토루 와타나베
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이우에 사또시
산요덴끼 가부시끼가이샤
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Priority claimed from JP1157369A external-priority patent/JPH0777434B2/ja
Priority claimed from JP1183976A external-priority patent/JPH0777436B2/ja
Application filed by 이우에 사또시, 산요덴끼 가부시끼가이샤 filed Critical 이우에 사또시
Publication of KR910002243A publication Critical patent/KR910002243A/ko
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Publication of KR100276971B1 publication Critical patent/KR100276971B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음

Description

고체촬상소자의 구동방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예의 구동방법을 이용한 발광장치의 블록도.
제2도는 제1도의 동작 타이밍도.
제6도는 본 발명의 다른 실시예의 구동방법을 이용한 촬상장치의 블록도.

Claims (3)

  1. 한 도전형 반도체기판(1)의 한주면에 역도전형의 확산영역(4)이 설치됨과 동시에, 이 확산영역내에 광전변화에 의해 발생하는 광전하(e)를 축적 전송하는 복수의 확산영역(4)이 채널스톱영역(3)으로 서로 분리되어 배열 형성되고, 상기 확산영역중의 과다한 광전하(e)를 상기 반도체기판(1)에 받아들이는 CCD 고체촬상소자의 구동방법에 있어서, 상기 확산영역(4)과 상기 반도체기판(1)과의 사이에 전위 장벽을 형성할 수 있는 상기 반도체기판의 전위에 대하여 상기 반도체기판(1)을 고전위하여 상기 전위장벽을 소멸시킴과 동시에, 상기 확산영역(4)위에 설치되어진 전송전극(5a)(5b)을 펄스구동하는 것으로, 상기 확산영역(4)중의 광전하(e)를 전송구동하여, 상기 광전하(e)를 상기 확산영역(4)에서 상기 반도체기판(1)측에 배출시키는 것을 특징으로 하는 고체촬상소자의 구동방법.
  2. 광전변화에 의해 발생하는 광전하를 축적 전송하는 복수의 채널영역(24)이 채널스톱영역(22)으로 서로 분리되어 배열형성하고, 상기 채널스톱영역(22)내에 설치되어진 오우버르로우드레인(23)에, 상기 채널영역(24)중의 과다한 광전하를 받아들이는 CCD고체촬상소자의 구동방법에 있어서, 상기 채널영역(24)과 상기 오우버프로우드레인(23)과의 사이에 전위장벽을 형성할 수 있는 상기 오우버프로우드레인(23)의 전위에 대하여, 상기 오우버프로우드레인(23)을 고전위로하여, 상기 전위장벽을 소멸시킴과 동시에, 상기 채널영역(24)위에 설치되어진 전송전극(25)(26)을 펄스구동하는 것으로, 상기 채널영역(24)중의 광전하를 전송구동하고, 상기 광전하를 상기 채널영역(24)에서 상기 오우버프로우드레인(23)에 배출시키는 것을 특징으로 하는 고체촬상소자의 구동방법.
  3. 청구범위 제1항과 제2항에 있어서, 고체촬상소자의 구동방법에 있어서 수평 및 수직방향에 주사되는 상기 고체촬상소자의 수직주사기간중 제1기간에 상기 확산영역(4), 채널영역(24)중의 광전하를 상기 반도체 기판(1) 오우버프로우드레인(23)에 배출시킨후에 남은 제2기간에 상기 확산영역(4) 채널영역(24)에 광전하를 축적하고, 상기 제2의 기간에 얻은 광전하를 한 화면에 영상정보로서 출력하는 것을 특징으로 하는 고체촬상소자의 구동방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900008215A 1989-06-20 1990-06-01 고체촬상소자의 구동방법 KR100276971B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1157369A JPH0777434B2 (ja) 1989-06-20 1989-06-20 固体撮像素子の駆動方法
JP1-157369 1989-06-20
JP1-183976 1989-06-20
JP1183976A JPH0777436B2 (ja) 1989-07-17 1989-07-17 固体撮像素子の駆動方法

Publications (2)

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KR910002243A true KR910002243A (ko) 1991-01-31
KR100276971B1 KR100276971B1 (ko) 2001-01-15

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US (1) US5057926A (ko)
EP (1) EP0403939B1 (ko)
KR (1) KR100276971B1 (ko)
DE (1) DE69025651T2 (ko)

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JPH04119776A (ja) * 1990-09-11 1992-04-21 Sony Corp 固体撮像装置
JP2662455B2 (ja) * 1990-09-13 1997-10-15 シャープ株式会社 固体撮像装置
JPH04335573A (ja) * 1991-05-10 1992-11-24 Sony Corp Ｃｃｄ固体撮像素子
US5233428A (en) * 1991-11-05 1993-08-03 Loral Fairchild Systems Electronic exposure control system for a solid state imager
JP2888719B2 (ja) * 1993-02-15 1999-05-10 株式会社東芝 固体撮像装置の駆動方法
US5982422A (en) * 1993-06-22 1999-11-09 The United States Of America As Represented By The Secretary Of The Army Accelerated imaging technique using platinum silicide camera
JP3251104B2 (ja) * 1993-07-08 2002-01-28 ソニー株式会社 固体撮像装置
US5515103A (en) * 1993-09-30 1996-05-07 Sanyo Electric Co. Image signal processing apparatus integrated on single semiconductor substrate
US5978024A (en) * 1994-04-15 1999-11-02 Lg Semicon Co., Ltd. Auto variable anti-blooming bias control circuit and method
JP3213529B2 (ja) * 1995-11-30 2001-10-02 三洋電機株式会社 撮像装置
JP2845216B2 (ja) * 1996-09-27 1999-01-13 日本電気株式会社 固体撮像装置およびその製造方法
JP3370249B2 (ja) * 1996-12-27 2003-01-27 松下電器産業株式会社 固体撮像装置とその駆動方法および製造方法
KR100239409B1 (ko) * 1997-01-25 2000-01-15 김영환 고체 촬상 소자
JP2000092395A (ja) * 1998-09-11 2000-03-31 Nec Corp 固体撮像装置およびその駆動方法
JP2001156284A (ja) * 1999-11-25 2001-06-08 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP4289872B2 (ja) * 2002-11-15 2009-07-01 三洋電機株式会社 固体撮像素子及びその駆動方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679212A (en) * 1984-07-31 1987-07-07 Texas Instruments Incorporated Method and apparatus for using surface trap recombination in solid state imaging devices
JP2525781B2 (ja) * 1986-09-11 1996-08-21 株式会社東芝 固体撮像装置の駆動方法
US4875100A (en) * 1986-10-23 1989-10-17 Sony Corporation Electronic shutter for a CCD image sensor
GB2196811B (en) * 1986-10-25 1990-05-09 English Electric Valve Co Ltd Image sensors
JPH07118788B2 (ja) * 1986-10-28 1995-12-18 株式会社東芝 電子スチルカメラ
US4912560A (en) * 1988-01-29 1990-03-27 Kabushiki Kaisha Toshiba Solid state image sensing device
FR2627314B1 (fr) * 1988-02-12 1990-06-08 Thomson Csf Dispositif de lecture de charges pour photosenseur lineaire, avec dispositif d'antieblouissement a structure en ligne

Also Published As

Publication number Publication date
EP0403939A2 (en) 1990-12-27
US5057926A (en) 1991-10-15
EP0403939B1 (en) 1996-03-06
KR100276971B1 (ko) 2001-01-15
EP0403939A3 (en) 1992-08-12
DE69025651T2 (de) 1996-08-14
DE69025651D1 (de) 1996-04-11

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