DE69025651D1 - Ansteuerverfahren eines Festkörper-Bildaufnehmers - Google Patents

Ansteuerverfahren eines Festkörper-Bildaufnehmers

Info

Publication number
DE69025651D1
DE69025651D1 DE69025651T DE69025651T DE69025651D1 DE 69025651 D1 DE69025651 D1 DE 69025651D1 DE 69025651 T DE69025651 T DE 69025651T DE 69025651 T DE69025651 T DE 69025651T DE 69025651 D1 DE69025651 D1 DE 69025651D1
Authority
DE
Germany
Prior art keywords
solid
image sensor
driving method
state image
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69025651T
Other languages
English (en)
Other versions
DE69025651T2 (de
Inventor
Tohru Wataanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1157369A external-priority patent/JPH0777434B2/ja
Priority claimed from JP1183976A external-priority patent/JPH0777436B2/ja
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Application granted granted Critical
Publication of DE69025651D1 publication Critical patent/DE69025651D1/de
Publication of DE69025651T2 publication Critical patent/DE69025651T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69025651T 1989-06-20 1990-06-12 Ansteuerverfahren eines Festkörper-Bildaufnehmers Expired - Fee Related DE69025651T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1157369A JPH0777434B2 (ja) 1989-06-20 1989-06-20 固体撮像素子の駆動方法
JP1183976A JPH0777436B2 (ja) 1989-07-17 1989-07-17 固体撮像素子の駆動方法

Publications (2)

Publication Number Publication Date
DE69025651D1 true DE69025651D1 (de) 1996-04-11
DE69025651T2 DE69025651T2 (de) 1996-08-14

Family

ID=26484847

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69025651T Expired - Fee Related DE69025651T2 (de) 1989-06-20 1990-06-12 Ansteuerverfahren eines Festkörper-Bildaufnehmers

Country Status (4)

Country Link
US (1) US5057926A (de)
EP (1) EP0403939B1 (de)
KR (1) KR100276971B1 (de)
DE (1) DE69025651T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04119776A (ja) * 1990-09-11 1992-04-21 Sony Corp 固体撮像装置
JP2662455B2 (ja) * 1990-09-13 1997-10-15 シャープ株式会社 固体撮像装置
JPH04335573A (ja) * 1991-05-10 1992-11-24 Sony Corp Ｃｃｄ固体撮像素子
US5233428A (en) * 1991-11-05 1993-08-03 Loral Fairchild Systems Electronic exposure control system for a solid state imager
JP2888719B2 (ja) * 1993-02-15 1999-05-10 株式会社東芝 固体撮像装置の駆動方法
US5982422A (en) * 1993-06-22 1999-11-09 The United States Of America As Represented By The Secretary Of The Army Accelerated imaging technique using platinum silicide camera
JP3251104B2 (ja) * 1993-07-08 2002-01-28 ソニー株式会社 固体撮像装置
US5515103A (en) * 1993-09-30 1996-05-07 Sanyo Electric Co. Image signal processing apparatus integrated on single semiconductor substrate
US5978024A (en) * 1994-04-15 1999-11-02 Lg Semicon Co., Ltd. Auto variable anti-blooming bias control circuit and method
JP3213529B2 (ja) * 1995-11-30 2001-10-02 三洋電機株式会社 撮像装置
JP2845216B2 (ja) * 1996-09-27 1999-01-13 日本電気株式会社 固体撮像装置およびその製造方法
JP3370249B2 (ja) * 1996-12-27 2003-01-27 松下電器産業株式会社 固体撮像装置とその駆動方法および製造方法
KR100239409B1 (ko) * 1997-01-25 2000-01-15 김영환 고체 촬상 소자
JP2000092395A (ja) * 1998-09-11 2000-03-31 Nec Corp 固体撮像装置およびその駆動方法
JP2001156284A (ja) * 1999-11-25 2001-06-08 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP4289872B2 (ja) * 2002-11-15 2009-07-01 三洋電機株式会社 固体撮像素子及びその駆動方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679212A (en) * 1984-07-31 1987-07-07 Texas Instruments Incorporated Method and apparatus for using surface trap recombination in solid state imaging devices
JP2525781B2 (ja) * 1986-09-11 1996-08-21 株式会社東芝 固体撮像装置の駆動方法
US4875100A (en) * 1986-10-23 1989-10-17 Sony Corporation Electronic shutter for a CCD image sensor
GB2196811B (en) * 1986-10-25 1990-05-09 English Electric Valve Co Ltd Image sensors
JPH07118788B2 (ja) * 1986-10-28 1995-12-18 株式会社東芝 電子スチルカメラ
US4912560A (en) * 1988-01-29 1990-03-27 Kabushiki Kaisha Toshiba Solid state image sensing device
FR2627314B1 (fr) * 1988-02-12 1990-06-08 Thomson Csf Dispositif de lecture de charges pour photosenseur lineaire, avec dispositif d'antieblouissement a structure en ligne

Also Published As

Publication number Publication date
EP0403939A3 (de) 1992-08-12
DE69025651T2 (de) 1996-08-14
EP0403939B1 (de) 1996-03-06
EP0403939A2 (de) 1990-12-27
KR910002243A (ko) 1991-01-31
KR100276971B1 (ko) 2001-01-15
US5057926A (en) 1991-10-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee