DE3781295D1 - Ladungsverschiebeanordnung. - Google Patents

Ladungsverschiebeanordnung.

Info

Publication number
DE3781295D1
DE3781295D1 DE8787200370T DE3781295T DE3781295D1 DE 3781295 D1 DE3781295 D1 DE 3781295D1 DE 8787200370 T DE8787200370 T DE 8787200370T DE 3781295 T DE3781295 T DE 3781295T DE 3781295 D1 DE3781295 D1 DE 3781295D1
Authority
DE
Germany
Prior art keywords
load shifting
shifting arrangement
arrangement
load
shifting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787200370T
Other languages
English (en)
Other versions
DE3781295T2 (de
Inventor
Jacobus G C Bakker
Leonard J M Int Octrooib Esser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3781295D1 publication Critical patent/DE3781295D1/de
Publication of DE3781295T2 publication Critical patent/DE3781295T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1091—Substrate region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE8787200370T 1986-03-27 1987-03-02 Ladungsverschiebeanordnung. Expired - Fee Related DE3781295T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8600786A NL8600786A (nl) 1986-03-27 1986-03-27 Ladingsgekoppelde inrichting.

Publications (2)

Publication Number Publication Date
DE3781295D1 true DE3781295D1 (de) 1992-10-01
DE3781295T2 DE3781295T2 (de) 1993-03-18

Family

ID=19847783

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787200370T Expired - Fee Related DE3781295T2 (de) 1986-03-27 1987-03-02 Ladungsverschiebeanordnung.

Country Status (7)

Country Link
US (1) US4878102A (de)
EP (1) EP0239151B1 (de)
JP (1) JPS62237761A (de)
AU (1) AU593080B2 (de)
CA (1) CA1278863C (de)
DE (1) DE3781295T2 (de)
NL (1) NL8600786A (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01171361A (ja) * 1987-12-25 1989-07-06 Fuji Xerox Co Ltd 原稿読取装置
US5159419A (en) * 1988-03-15 1992-10-27 Texas Instruments Incorporated CCD imager responsive to long wavelength radiation
US5252509A (en) * 1988-03-15 1993-10-12 Texas Instruments Incorporated Ccd imager responsive to long wavelength radiation
JP2517375B2 (ja) * 1988-12-19 1996-07-24 三菱電機株式会社 固体撮像装置および該装置に用いられる電荷転送装置ならびにその製造方法
JPH0355854A (ja) * 1989-07-25 1991-03-11 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US5223726A (en) * 1989-07-25 1993-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device for charge transfer device
US5173756A (en) * 1990-01-05 1992-12-22 International Business Machines Corporation Trench charge-coupled device
JP2825004B2 (ja) * 1991-02-08 1998-11-18 インターナショナル・ビジネス・マシーンズ・コーポレーション 側壁電荷結合撮像素子及びその製造方法
EP0512607B1 (de) * 1991-05-03 1997-07-16 Koninklijke Philips Electronics N.V. Verfahren zur Herstellung eines Halbleiterbauelements mit Ionenimplantierung
JP2816063B2 (ja) * 1992-10-06 1998-10-27 松下電器産業株式会社 電荷転送装置
US5981988A (en) * 1996-04-26 1999-11-09 The Regents Of The University Of California Three-dimensional charge coupled device
FR2852770B1 (fr) * 2003-03-21 2005-05-27 Capteur d'image a cycle de lecture rapide
JP2005268476A (ja) * 2004-03-18 2005-09-29 Fuji Film Microdevices Co Ltd 光電変換膜積層型固体撮像装置
US7859026B2 (en) * 2006-03-16 2010-12-28 Spansion Llc Vertical semiconductor device
GB2468668B (en) * 2009-03-17 2014-07-16 E2V Tech Uk Ltd CCD imaging array with extended dynamic range
KR102401724B1 (ko) * 2015-04-30 2022-05-25 삼성디스플레이 주식회사 미세 전극 형성 방법
FR3108784B1 (fr) * 2020-03-30 2022-04-01 St Microelectronics Crolles 2 Sas Dispositif à couplage de charges

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906543A (en) * 1971-12-23 1975-09-16 Bell Telephone Labor Inc Solid state imaging apparatus employing charge transfer devices
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
DE2412345A1 (de) * 1974-03-14 1975-09-18 Siemens Ag Ladungsverschiebeanordnung
JPS5120680A (ja) * 1974-08-13 1976-02-19 Fujitsu Ltd Denkatensosochi
US4047215A (en) * 1975-01-31 1977-09-06 Texas Instruments Incorporated Uniphase charge coupled devices
DE2646301C3 (de) * 1975-10-31 1981-01-15 Fujitsu Ltd., Kawasaki, Kanagawa (Japan) Ladungsgekoppeltes Halbleiterbauelement
US4252579A (en) * 1979-05-07 1981-02-24 International Business Machines Corporation Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition
US4450464A (en) * 1980-07-23 1984-05-22 Matsushita Electric Industrial Co., Ltd. Solid state area imaging apparatus having a charge transfer arrangement
DE3418778A1 (de) * 1984-05-19 1985-11-21 Josef Dr. 8048 Haimhausen Kemmer Ccd-halbleiterbauelement
JPS61161012A (ja) * 1985-01-10 1986-07-21 Matsushita Electronics Corp Ｃｃｄシフトレジスタ
JP3072670B2 (ja) * 1992-02-28 2000-07-31 味の素株式会社 ガラクトオリゴ糖の製造方法

Also Published As

Publication number Publication date
EP0239151A1 (de) 1987-09-30
DE3781295T2 (de) 1993-03-18
JPS62237761A (ja) 1987-10-17
US4878102A (en) 1989-10-31
CA1278863C (en) 1991-01-08
EP0239151B1 (de) 1992-08-26
NL8600786A (nl) 1987-10-16
AU593080B2 (en) 1990-02-01
AU7060687A (en) 1987-10-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee