DE3577948D1 - Ladungsverschiebeanordnung. - Google Patents

Ladungsverschiebeanordnung.

Info

Publication number
DE3577948D1
DE3577948D1 DE8585116012T DE3577948T DE3577948D1 DE 3577948 D1 DE3577948 D1 DE 3577948D1 DE 8585116012 T DE8585116012 T DE 8585116012T DE 3577948 T DE3577948 T DE 3577948T DE 3577948 D1 DE3577948 D1 DE 3577948D1
Authority
DE
Germany
Prior art keywords
load shifting
shifting arrangement
arrangement
load
shifting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585116012T
Other languages
English (en)
Inventor
Tetsuo C O Patent Divis Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3577948D1 publication Critical patent/DE3577948D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE8585116012T 1984-12-19 1985-12-16 Ladungsverschiebeanordnung. Expired - Lifetime DE3577948D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59267708A JPS61144874A (ja) 1984-12-19 1984-12-19 電荷転送装置

Publications (1)

Publication Number Publication Date
DE3577948D1 true DE3577948D1 (de) 1990-06-28

Family

ID=17448439

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585116012T Expired - Lifetime DE3577948D1 (de) 1984-12-19 1985-12-16 Ladungsverschiebeanordnung.

Country Status (4)

Country Link
US (1) US4721989A (de)
EP (1) EP0185343B1 (de)
JP (1) JPS61144874A (de)
DE (1) DE3577948D1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6262553A (ja) * 1985-09-12 1987-03-19 Toshiba Corp 固体撮像装置
JPS6425473A (en) * 1987-07-21 1989-01-27 Nec Corp Charge transfer device
JPH04335573A (ja) * 1991-05-10 1992-11-24 Sony Corp Ccd固体撮像素子
JP3052560B2 (ja) * 1992-04-15 2000-06-12 日本電気株式会社 電荷転送撮像装置およびその製造方法
KR0172837B1 (ko) * 1995-08-11 1999-02-01 문정환 고체촬상 소자의 구조

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995302A (en) * 1973-05-07 1976-11-30 Fairchild Camera And Instrument Corporation Transfer gate-less photosensor configuration
US4065847A (en) * 1974-01-04 1978-01-03 Commissariat A L'energie Atomique Method of fabrication of a charge-coupled device
JPS5451318A (en) * 1977-09-29 1979-04-23 Sony Corp Solid pickup unit
US4206371A (en) * 1978-10-27 1980-06-03 Rca Corporation CCD with differently doped substrate regions beneath a common electrode
JPS5685981A (en) * 1979-12-15 1981-07-13 Sharp Corp Solid image pickup apparatus
JPS5780764A (en) * 1980-11-10 1982-05-20 Sony Corp Solid state image pickup element
JPS58125977A (ja) * 1982-01-22 1983-07-27 Nec Corp 電荷転送撮像装置

Also Published As

Publication number Publication date
US4721989A (en) 1988-01-26
EP0185343A1 (de) 1986-06-25
EP0185343B1 (de) 1990-05-23
JPS61144874A (ja) 1986-07-02

Similar Documents

Publication Publication Date Title
NO904711L (no) Mellomprodukt.
ATE41922T1 (de) Alkylsulfonamidophenylalkylamine.
NO854540L (no) Tynnplatekonstruksjon.
DE3586502T2 (de) Schaltungsumschaltanordnungen.
DE3575246D1 (de) Stromflussumkehrschaltkreis.
DE3781295D1 (de) Ladungsverschiebeanordnung.
DE3673879D1 (de) Ladungsverschiebeanordnung.
DE3579319D1 (de) Kupplungsanordnung.
DE3578058D1 (de) Schiffsbodenstruktur.
DE3582340D1 (de) Kompensierte waegezelle.
FI860122A (fi) Flat paneldisplayenhet utnyttjande en linjeformad faeltemissionskatodgrupp.
DE3674599D1 (de) Ladungsverschiebeanordnung.
NL191495C (nl) Snijlading.
DE3582436D1 (de) Lastschalter.
NL191494C (nl) Snijlading.
DE3574615D1 (de) Lastfuehler.
DE3485440D1 (de) Lastschalter.
DE3577948D1 (de) Ladungsverschiebeanordnung.
DE3581793D1 (de) Ladungsverschiebeanordnung.
FI853162A0 (fi) Neutrala sulfidsamlarkompositioner.
DE3577248D1 (de) Impulsformerschaltung.
DE3578354D1 (de) Sequentielle auswahlschaltungen.
DE3676878D1 (de) Ladungsverschiebeanordnung.
DE3576099D1 (de) Infrarot-opto-elektronischer bauteil.
DE3583869D1 (de) Parallel-serien-umsetzer.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)