NL8401311A - Ladingsgekoppelde halfgeleiderinrichting met dynamische besturing. - Google Patents
Ladingsgekoppelde halfgeleiderinrichting met dynamische besturing. Download PDFInfo
- Publication number
- NL8401311A NL8401311A NL8401311A NL8401311A NL8401311A NL 8401311 A NL8401311 A NL 8401311A NL 8401311 A NL8401311 A NL 8401311A NL 8401311 A NL8401311 A NL 8401311A NL 8401311 A NL8401311 A NL 8401311A
- Authority
- NL
- Netherlands
- Prior art keywords
- electrodes
- charge
- clock
- electrode
- stages
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 230000000295 complement effect Effects 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000015654 memory Effects 0.000 description 18
- 238000005036 potential barrier Methods 0.000 description 9
- 230000006399 behavior Effects 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- 230000010354 integration Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001454 recorded image Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Networks Using Active Elements (AREA)
- Shift Register Type Memory (AREA)
- Light Receiving Elements (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8401311A NL8401311A (nl) | 1984-04-24 | 1984-04-24 | Ladingsgekoppelde halfgeleiderinrichting met dynamische besturing. |
| US06/616,936 US4677650A (en) | 1984-04-24 | 1984-06-07 | Charge coupled semiconductor device with dynamic control |
| EP85200579A EP0161023B1 (en) | 1984-04-24 | 1985-04-16 | Charge-coupled semiconductor device with dynamic control |
| DE8585200579T DE3571730D1 (en) | 1984-04-24 | 1985-04-16 | Charge-coupled semiconductor device with dynamic control |
| AT85200579T ATE44848T1 (de) | 1984-04-24 | 1985-04-16 | Ladungsgekoppelte halbleiteranordnung mit dynamischer steuerung. |
| CA000479474A CA1243112A (en) | 1984-04-24 | 1985-04-18 | Charge-coupled semiconductor device with dynamic control |
| ES542409A ES8702739A1 (es) | 1984-04-24 | 1985-04-19 | "un dispositivo semiconductor acoplado en carga" |
| AU41612/85A AU581127B2 (en) | 1984-04-24 | 1985-04-23 | Charge-coupled semiconductor device with dynamic control |
| JP60085573A JPS60239058A (ja) | 1984-04-24 | 1985-04-23 | ダイナミツク制御を有する電荷結合半導体装置 |
| SG886/90A SG88690G (en) | 1984-04-24 | 1990-10-25 | Charge-coupled semiconductor device with dynamic control |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8401311 | 1984-04-24 | ||
| NL8401311A NL8401311A (nl) | 1984-04-24 | 1984-04-24 | Ladingsgekoppelde halfgeleiderinrichting met dynamische besturing. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8401311A true NL8401311A (nl) | 1985-11-18 |
Family
ID=19843850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8401311A NL8401311A (nl) | 1984-04-24 | 1984-04-24 | Ladingsgekoppelde halfgeleiderinrichting met dynamische besturing. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4677650A (ja) |
| EP (1) | EP0161023B1 (ja) |
| JP (1) | JPS60239058A (ja) |
| AT (1) | ATE44848T1 (ja) |
| AU (1) | AU581127B2 (ja) |
| CA (1) | CA1243112A (ja) |
| DE (1) | DE3571730D1 (ja) |
| ES (1) | ES8702739A1 (ja) |
| NL (1) | NL8401311A (ja) |
| SG (1) | SG88690G (ja) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8501210A (nl) * | 1985-04-29 | 1986-11-17 | Philips Nv | Ladingsgekoppelde inrichting. |
| NL8603007A (nl) * | 1986-11-27 | 1988-06-16 | Philips Nv | Ladingsgekoppelde inrichting. |
| NL8603008A (nl) * | 1986-11-27 | 1988-06-16 | Philips Nv | Ccd-beeldopneeminrichting. |
| GB2209895B (en) * | 1987-09-16 | 1991-09-25 | Philips Electronic Associated | A circuit arrangement for storing sampled analogue electrical currents |
| JPH02105398A (ja) * | 1988-08-29 | 1990-04-17 | Philips Gloeilampenfab:Nv | 駆動シフトレジスタ |
| JPH0271684A (ja) * | 1988-09-06 | 1990-03-12 | Mitsubishi Electric Corp | 固体撮像デバイス駆動装置 |
| EP0364038A1 (en) * | 1988-10-13 | 1990-04-18 | Koninklijke Philips Electronics N.V. | Driving clock waveform for solid-state image sensors |
| US4862275A (en) * | 1988-10-27 | 1989-08-29 | Eastman Kodak Company | Readout of charge packets from area imager CCD using an inverter-chain shift register |
| DE10142675A1 (de) * | 2001-08-31 | 2003-04-03 | Infineon Technologies Ag | Steuerregister |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USB299480I5 (ja) * | 1972-10-20 | |||
| US3913077A (en) * | 1974-04-17 | 1975-10-14 | Hughes Aircraft Co | Serial-parallel-serial ccd memory with interlaced storage |
| US3911290A (en) * | 1974-06-10 | 1975-10-07 | Ibm | N-phase bucket brigade optical scanner |
| DE2430349C3 (de) * | 1974-06-25 | 1979-05-03 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Integrierte Verzögerungsanordnung nach dem Prinzip der Ladungsverschiebeschaltungen |
| US3967254A (en) * | 1974-11-18 | 1976-06-29 | Rca Corporation | Charge transfer memory |
| DE2543023C3 (de) * | 1975-09-26 | 1981-07-09 | Siemens AG, 1000 Berlin und 8000 München | Speicheranordnung mit Bausteinen aus Ladungsverschiebespeichern |
| US4178614A (en) * | 1978-08-24 | 1979-12-11 | Rca Corporation | Readout of a densely packed CCD |
| JPS5984575A (ja) * | 1982-11-08 | 1984-05-16 | Hitachi Ltd | 固体撮像素子 |
| NL8300366A (nl) * | 1983-02-01 | 1984-09-03 | Philips Nv | Beeldopneeminrichting. |
| GB8314300D0 (en) * | 1983-05-24 | 1983-06-29 | Gen Electric Co Plc | Image sensors |
| US4569067A (en) * | 1983-08-04 | 1986-02-04 | Motorola, Inc. | Dual master shift register bit |
| US4595845A (en) * | 1984-03-13 | 1986-06-17 | Mostek Corporation | Non-overlapping clock CMOS circuit with two threshold voltages |
| FR2566871B1 (fr) * | 1984-06-27 | 1986-12-19 | Pont A Mousson | Joint d'etancheite pour vanne a obturateur rotatif et son procede de fabrication |
-
1984
- 1984-04-24 NL NL8401311A patent/NL8401311A/nl not_active Application Discontinuation
- 1984-06-07 US US06/616,936 patent/US4677650A/en not_active Expired - Fee Related
-
1985
- 1985-04-16 DE DE8585200579T patent/DE3571730D1/de not_active Expired
- 1985-04-16 EP EP85200579A patent/EP0161023B1/en not_active Expired
- 1985-04-16 AT AT85200579T patent/ATE44848T1/de not_active IP Right Cessation
- 1985-04-18 CA CA000479474A patent/CA1243112A/en not_active Expired
- 1985-04-19 ES ES542409A patent/ES8702739A1/es not_active Expired
- 1985-04-23 AU AU41612/85A patent/AU581127B2/en not_active Ceased
- 1985-04-23 JP JP60085573A patent/JPS60239058A/ja active Pending
-
1990
- 1990-10-25 SG SG886/90A patent/SG88690G/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| ES8702739A1 (es) | 1986-12-16 |
| CA1243112A (en) | 1988-10-11 |
| SG88690G (en) | 1990-12-21 |
| AU581127B2 (en) | 1989-02-09 |
| EP0161023B1 (en) | 1989-07-19 |
| DE3571730D1 (en) | 1989-08-24 |
| ES542409A0 (es) | 1986-12-16 |
| EP0161023A1 (en) | 1985-11-13 |
| AU4161285A (en) | 1985-10-31 |
| US4677650A (en) | 1987-06-30 |
| ATE44848T1 (de) | 1989-08-15 |
| JPS60239058A (ja) | 1985-11-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |