USB299480I5 - - Google Patents

Info

Publication number
USB299480I5
USB299480I5 US299480DD USB299480I5 US B299480 I5 USB299480 I5 US B299480I5 US 299480D D US299480D D US 299480DD US B299480 I5 USB299480 I5 US B299480I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of USB299480I5 publication Critical patent/USB299480I5/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
US299480D 1972-10-20 Pending USB299480I5 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29948072A 1972-10-20 1972-10-20
US29948972A 1972-10-20 1972-10-20

Publications (1)

Publication Number Publication Date
USB299480I5 true USB299480I5 (ja)

Family

ID=26971244

Family Applications (2)

Application Number Title Priority Date Filing Date
US299480D Pending USB299480I5 (ja) 1972-10-20
US00299480A Expired - Lifetime US3781574A (en) 1972-10-20 1972-10-20 Coherent sampled readout circuit and signal processor for a charge coupled device array

Family Applications After (1)

Application Number Title Priority Date Filing Date
US00299480A Expired - Lifetime US3781574A (en) 1972-10-20 1972-10-20 Coherent sampled readout circuit and signal processor for a charge coupled device array

Country Status (4)

Country Link
US (2) US3781574A (ja)
DE (1) DE2352184C2 (ja)
FR (1) FR2204013B1 (ja)
GB (1) GB1413036A (ja)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
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GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
JPS5024084A (ja) * 1973-07-05 1975-03-14
DE2541510A1 (de) * 1974-09-17 1976-03-25 Westinghouse Electric Corp Verarbeitungssystem fuer diskrete analogsignale
US4233527A (en) * 1975-06-20 1980-11-11 Siemens Aktiengesellschaft Charge injection device opto-electronic sensor
US3991322A (en) * 1975-06-30 1976-11-09 California Microwave, Inc. Signal delay means using bucket brigade and sample and hold circuits
DE2543083C3 (de) * 1975-09-26 1979-01-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Bildsensor sowie Verfahren zum Betrieb eines solchen Bildsensors
US4079238A (en) * 1975-10-24 1978-03-14 Westinghouse Electric Corporation Dual-CCD, real-time, fully-analog correlator
US4156818A (en) * 1975-12-23 1979-05-29 International Business Machines Corporation Operating circuitry for semiconductor charge coupled devices
US4410811A (en) * 1977-03-18 1983-10-18 Siemens Aktiengesellschaft Method for the operation of a CID sensor matrix
US4152606A (en) * 1977-09-16 1979-05-01 Hewlett-Packard Company Waveform capture device
US4151429A (en) * 1977-10-03 1979-04-24 Northern Telecom Limited Differential charge sensing circuit for MOS devices
FR2440079A1 (fr) * 1978-10-23 1980-05-23 Westinghouse Electric Corp Element a transfert de charges perfectionne
US4298953A (en) * 1979-02-28 1981-11-03 Massachusetts Institute Of Technology Programmable zero-bias floating gate tapping method and apparatus
US4287441A (en) * 1979-03-30 1981-09-01 The United States Of America As Represented By The Secretary Of The Army Correlated double sampling CCD video preprocessor-amplifier
JPS55163694A (en) * 1979-06-01 1980-12-19 Fujitsu Ltd Sample holding circuit
DE3068106D1 (en) * 1979-08-29 1984-07-12 Rockwell International Corp Ccd integrated circuit
US4389615A (en) * 1979-08-29 1983-06-21 Rockwell International Corporation CCD Demodulator circuit
JPS56116374A (en) * 1980-02-20 1981-09-12 Sony Corp Charge detection circuit
FR2483667A1 (fr) * 1980-06-03 1981-12-04 Thomson Csf Dispositif d'echantillonnage et maintien a capacite mos
US4454435A (en) * 1981-08-07 1984-06-12 Hewlett-Packard Company CCD Amplifier using second correlated sampling and negative feedback for noise reduction
US4454545A (en) * 1982-06-14 1984-06-12 Rca Corporation Charge coupled device based inspection system and method
US4454541A (en) * 1982-06-14 1984-06-12 Rca Corporation Charge coupled device based blemish detection system and method
DE3232671A1 (de) * 1982-09-02 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Anordnung und verfahren zur spannungsmessung an einem vergrabenen messobjekt
US4551759A (en) * 1983-04-13 1985-11-05 The United States Of America As Represented By The Secretary Of The Navy Sample video amplifier
US4575751A (en) * 1983-11-15 1986-03-11 Rca Corporation Method and subsystem for plotting the perimeter of an object
DE3484122D1 (de) * 1983-11-21 1991-03-28 Nec Corp Schaltung zur feststellung von signalladungen, die in einer ladungsverschiebeschaltung uebertragen werden.
NL8401311A (nl) * 1984-04-24 1985-11-18 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met dynamische besturing.
JPS6134798A (ja) * 1984-07-25 1986-02-19 Sharp Corp 電荷転送素子の出力信号処理回路
US4661788A (en) * 1985-05-10 1987-04-28 Rca Corporation Tapped CCD delay line with non-destructive charge sensing using floating diffusions
JPH0693765B2 (ja) * 1985-11-06 1994-11-16 キヤノン株式会社 撮像装置
JPH0815321B2 (ja) * 1986-12-16 1996-02-14 キヤノン株式会社 光電変換装置
US5737016A (en) * 1985-11-15 1998-04-07 Canon Kabushiki Kaisha Solid state image pickup apparatus for reducing noise
US5771070A (en) * 1985-11-15 1998-06-23 Canon Kabushiki Kaisha Solid state image pickup apparatus removing noise from the photoelectric converted signal
US4990862A (en) * 1986-02-24 1991-02-05 Sony Corporation Output stage for solid-state image pick-up device
JPS6358968A (ja) * 1986-08-29 1988-03-14 Mitsubishi Electric Corp 電荷結合素子
US5349380A (en) * 1991-10-15 1994-09-20 Hughes Aircraft Company Resettable clamp-sample-and-hold signal processing circuit for imaging sensors
JPH05275692A (ja) * 1992-03-25 1993-10-22 Sony Corp 半導体装置およびその製造方法
US5670935A (en) * 1993-02-26 1997-09-23 Donnelly Corporation Rearview vision system for vehicle including panoramic view
US6025875A (en) * 1995-10-23 2000-02-15 National Semiconductor Corporation Analog signal sampler for imaging systems
JP3774499B2 (ja) 1996-01-24 2006-05-17 キヤノン株式会社 光電変換装置
US6031399A (en) * 1998-02-13 2000-02-29 National Semiconductor Corporation Selectively configurable analog signal sampler
US6337808B1 (en) 1999-08-30 2002-01-08 Micron Technology, Inc. Memory circuit and method of using same
US6304505B1 (en) 2000-05-22 2001-10-16 Micron Technology Inc. Differential correlated double sampling DRAM sense amplifier
US6518607B2 (en) * 2000-07-31 2003-02-11 Isetex, Inc. Low feed through-high dynamic range charge detection using transistor punch through reset
US6937025B1 (en) * 2003-07-17 2005-08-30 Foveon, Inc. Method and circuit employing current sensing to read a sensor
JP4924228B2 (ja) * 2007-06-19 2012-04-25 ソニー株式会社 画像処理装置、画像処理方法、およびプログラム
US9029750B1 (en) 2011-08-02 2015-05-12 Northrop Grumman Systems Corporation CMOS and CCD sensor R/O with high gain and no kTC noise
US9989597B2 (en) 2014-08-22 2018-06-05 The Board Of Trustees Of The Leland Stanford Junior University Correlated double sampling for noise reduction in magnetoresistive sensors and sensor arrays
US10306172B2 (en) 2017-09-08 2019-05-28 Microsoft Technology Licensing, Llc Time-of-flight sensor readout circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit

Also Published As

Publication number Publication date
GB1413036A (en) 1975-11-05
DE2352184C2 (de) 1983-02-24
DE2352184A1 (de) 1974-05-02
FR2204013A1 (ja) 1974-05-17
US3781574A (en) 1973-12-25
FR2204013B1 (ja) 1978-08-04

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