NL8203862A - Zenerdiode. - Google Patents
Zenerdiode. Download PDFInfo
- Publication number
- NL8203862A NL8203862A NL8203862A NL8203862A NL8203862A NL 8203862 A NL8203862 A NL 8203862A NL 8203862 A NL8203862 A NL 8203862A NL 8203862 A NL8203862 A NL 8203862A NL 8203862 A NL8203862 A NL 8203862A
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor region
- zener diode
- region
- type
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 14
- 239000012535 impurity Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 5
- 230000003321 amplification Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16063481 | 1981-10-06 | ||
| JP16063481A JPS5860576A (ja) | 1981-10-06 | 1981-10-06 | ツエナ−ダイオ−ド |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8203862A true NL8203862A (nl) | 1983-05-02 |
Family
ID=15719161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8203862A NL8203862A (nl) | 1981-10-06 | 1982-10-05 | Zenerdiode. |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5860576A (ja) |
| NL (1) | NL8203862A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4739378A (en) * | 1986-02-18 | 1988-04-19 | Sgs Microelettronica S.P.A. | Protection of integrated circuits from electric discharge |
| US4886762A (en) * | 1985-08-06 | 1989-12-12 | Motorola Inc. | Monolithic temperature compensated voltage-reference diode and method for its manufacture |
| US5179030A (en) * | 1991-04-26 | 1993-01-12 | Unitrode Corporation | Method of fabricating a buried zener diode simultaneously with other semiconductor devices |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5880511A (en) * | 1995-06-30 | 1999-03-09 | Semtech Corporation | Low-voltage punch-through transient suppressor employing a dual-base structure |
| JP2007083865A (ja) * | 2005-09-22 | 2007-04-05 | Yanmar Co Ltd | 移動車両 |
-
1981
- 1981-10-06 JP JP16063481A patent/JPS5860576A/ja active Pending
-
1982
- 1982-10-05 NL NL8203862A patent/NL8203862A/nl not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4886762A (en) * | 1985-08-06 | 1989-12-12 | Motorola Inc. | Monolithic temperature compensated voltage-reference diode and method for its manufacture |
| US4739378A (en) * | 1986-02-18 | 1988-04-19 | Sgs Microelettronica S.P.A. | Protection of integrated circuits from electric discharge |
| US5179030A (en) * | 1991-04-26 | 1993-01-12 | Unitrode Corporation | Method of fabricating a buried zener diode simultaneously with other semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5860576A (ja) | 1983-04-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BV | The patent application has lapsed |