NL7906996A - Werkwijze voor het reinigen van een reaktor. - Google Patents

Werkwijze voor het reinigen van een reaktor. Download PDF

Info

Publication number
NL7906996A
NL7906996A NL7906996A NL7906996A NL7906996A NL 7906996 A NL7906996 A NL 7906996A NL 7906996 A NL7906996 A NL 7906996A NL 7906996 A NL7906996 A NL 7906996A NL 7906996 A NL7906996 A NL 7906996A
Authority
NL
Netherlands
Prior art keywords
reactor
cleaning
substrates
dry hydrogen
pressure
Prior art date
Application number
NL7906996A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7906996A priority Critical patent/NL7906996A/nl
Priority to CA000360274A priority patent/CA1143259A/fr
Priority to FR8019848A priority patent/FR2465791A1/fr
Priority to GB8030099A priority patent/GB2062689B/en
Priority to AU62474/80A priority patent/AU6247480A/en
Priority to JP12866580A priority patent/JPS5653740A/ja
Priority to DE19803035379 priority patent/DE3035379A1/de
Publication of NL7906996A publication Critical patent/NL7906996A/nl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning In General (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • ing And Chemical Polishing (AREA)
NL7906996A 1979-09-20 1979-09-20 Werkwijze voor het reinigen van een reaktor. NL7906996A (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL7906996A NL7906996A (nl) 1979-09-20 1979-09-20 Werkwijze voor het reinigen van een reaktor.
CA000360274A CA1143259A (fr) 1979-09-20 1980-09-11 Methode de nettoyage d'un reacteur
FR8019848A FR2465791A1 (fr) 1979-09-20 1980-09-15 Procede permettant de nettoyer un reacteur
GB8030099A GB2062689B (en) 1979-09-20 1980-09-17 Method of cleaning a reactor
AU62474/80A AU6247480A (en) 1979-09-20 1980-09-17 Cleaning method
JP12866580A JPS5653740A (en) 1979-09-20 1980-09-18 Method of cleaning reactor
DE19803035379 DE3035379A1 (de) 1979-09-20 1980-09-19 Verfahren zum reinigen eines reaktors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7906996A NL7906996A (nl) 1979-09-20 1979-09-20 Werkwijze voor het reinigen van een reaktor.
NL7906996 1979-09-20

Publications (1)

Publication Number Publication Date
NL7906996A true NL7906996A (nl) 1981-03-24

Family

ID=19833876

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7906996A NL7906996A (nl) 1979-09-20 1979-09-20 Werkwijze voor het reinigen van een reaktor.

Country Status (7)

Country Link
JP (1) JPS5653740A (fr)
AU (1) AU6247480A (fr)
CA (1) CA1143259A (fr)
DE (1) DE3035379A1 (fr)
FR (1) FR2465791A1 (fr)
GB (1) GB2062689B (fr)
NL (1) NL7906996A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4512812A (en) * 1983-09-22 1985-04-23 Varian Associates, Inc. Method for reducing phosphorous contamination in a vacuum processing chamber
US4597989A (en) * 1984-07-30 1986-07-01 Burroughs Corporation Method of depositing silicon films with reduced structural defects
US4657616A (en) * 1985-05-17 1987-04-14 Benzing Technologies, Inc. In-situ CVD chamber cleaner
GB2183204A (en) * 1985-11-22 1987-06-03 Advanced Semiconductor Mat Nitrogen trifluoride as an in-situ cleaning agent
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
US5755886A (en) * 1986-12-19 1998-05-26 Applied Materials, Inc. Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JP2708533B2 (ja) * 1989-03-14 1998-02-04 富士通株式会社 Ｃｖｄ装置の残留ガス除去方法
US5421957A (en) * 1993-07-30 1995-06-06 Applied Materials, Inc. Low temperature etching in cold-wall CVD systems
EP1083592A1 (fr) * 1999-09-10 2001-03-14 Interuniversitair Microelektronica Centrum Vzw Attaque chimique du nitrure de silicium par un gaz halogène anhydre
EP1083593A1 (fr) * 1999-09-10 2001-03-14 Interuniversitair Micro-Elektronica Centrum Vzw Attaque chimique du nitrure de silicium par un gaz halogène anhydre

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1202616B (de) * 1962-02-23 1965-10-07 Siemens Ag Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht
DE1240818B (de) * 1963-03-23 1967-05-24 Siemens Ag Verfahren zum Herstellen von hochreinem Halbleitermaterial durch Abscheidung aus derGasphase
CH433206A (de) * 1963-12-14 1967-04-15 Siemens Ag Verfahren zum Reinigen von Halterungen aus Kohlenstoff, welche zur Befestigung von aus Halbleitermaterial bestehenden Trägerstäben dienen
DE1619997A1 (de) * 1967-03-29 1970-03-26 Siemens Ag Verfahren zum serienmaessigen Herstellen von epitaktischen Schichten aus der Gasphase
US3669774A (en) * 1969-11-20 1972-06-13 Rca Corp Low temperature silicon etch
GB1539700A (en) * 1976-05-14 1979-01-31 Int Plasma Corp Process for etching sio2
US4138306A (en) * 1976-08-31 1979-02-06 Tokyo Shibaura Electric Co., Ltd. Apparatus for the treatment of semiconductors

Also Published As

Publication number Publication date
AU6247480A (en) 1981-04-09
DE3035379A1 (de) 1981-04-09
FR2465791B1 (fr) 1984-07-13
JPS5653740A (en) 1981-05-13
GB2062689A (en) 1981-05-28
FR2465791A1 (fr) 1981-03-27
GB2062689B (en) 1984-02-22
CA1143259A (fr) 1983-03-22

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Legal Events

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A1B A search report has been drawn up
BV The patent application has lapsed