JPS5653740A - Method of cleaning reactor - Google Patents

Method of cleaning reactor

Info

Publication number
JPS5653740A
JPS5653740A JP12866580A JP12866580A JPS5653740A JP S5653740 A JPS5653740 A JP S5653740A JP 12866580 A JP12866580 A JP 12866580A JP 12866580 A JP12866580 A JP 12866580A JP S5653740 A JPS5653740 A JP S5653740A
Authority
JP
Japan
Prior art keywords
cleaning reactor
reactor
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12866580A
Other languages
Japanese (ja)
Inventor
Petorusu Geraru Eheruharudousu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5653740A publication Critical patent/JPS5653740A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning In General (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
JP12866580A 1979-09-20 1980-09-18 Method of cleaning reactor Pending JPS5653740A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7906996A NL7906996A (en) 1979-09-20 1979-09-20 METHOD FOR CLEANING A REAKTOR.

Publications (1)

Publication Number Publication Date
JPS5653740A true JPS5653740A (en) 1981-05-13

Family

ID=19833876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12866580A Pending JPS5653740A (en) 1979-09-20 1980-09-18 Method of cleaning reactor

Country Status (7)

Country Link
JP (1) JPS5653740A (en)
AU (1) AU6247480A (en)
CA (1) CA1143259A (en)
DE (1) DE3035379A1 (en)
FR (1) FR2465791A1 (en)
GB (1) GB2062689B (en)
NL (1) NL7906996A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4512812A (en) * 1983-09-22 1985-04-23 Varian Associates, Inc. Method for reducing phosphorous contamination in a vacuum processing chamber
US4597989A (en) * 1984-07-30 1986-07-01 Burroughs Corporation Method of depositing silicon films with reduced structural defects
US4657616A (en) * 1985-05-17 1987-04-14 Benzing Technologies, Inc. In-situ CVD chamber cleaner
GB2183204A (en) * 1985-11-22 1987-06-03 Advanced Semiconductor Mat Nitrogen trifluoride as an in-situ cleaning agent
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5871811A (en) * 1986-12-19 1999-02-16 Applied Materials, Inc. Method for protecting against deposition on a selected region of a substrate
JP2708533B2 (en) * 1989-03-14 1998-02-04 富士通株式会社 Method for removing residual gas from CVD apparatus
US5421957A (en) * 1993-07-30 1995-06-06 Applied Materials, Inc. Low temperature etching in cold-wall CVD systems
EP1083592A1 (en) * 1999-09-10 2001-03-14 Interuniversitair Microelektronica Centrum Vzw Etching of silicon nitride by anhydrous halogen gas
EP1083593A1 (en) * 1999-09-10 2001-03-14 Interuniversitair Micro-Elektronica Centrum Vzw Etching of silicon nitride by anhydrous halogen gas

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1202616B (en) * 1962-02-23 1965-10-07 Siemens Ag Process for removing the semiconductor layer deposited on the heater during epitaxy
DE1240818B (en) * 1963-03-23 1967-05-24 Siemens Ag Process for producing high-purity semiconductor material by deposition from the gas phase
CH433206A (en) * 1963-12-14 1967-04-15 Siemens Ag Process for cleaning holders made of carbon, which are used for fastening carrier rods made of semiconductor material
DE1619997A1 (en) * 1967-03-29 1970-03-26 Siemens Ag Process for the serial production of epitaxial layers from the gas phase
US3669774A (en) * 1969-11-20 1972-06-13 Rca Corp Low temperature silicon etch
GB1539700A (en) * 1976-05-14 1979-01-31 Int Plasma Corp Process for etching sio2
US4138306A (en) * 1976-08-31 1979-02-06 Tokyo Shibaura Electric Co., Ltd. Apparatus for the treatment of semiconductors

Also Published As

Publication number Publication date
NL7906996A (en) 1981-03-24
CA1143259A (en) 1983-03-22
GB2062689B (en) 1984-02-22
DE3035379A1 (en) 1981-04-09
FR2465791A1 (en) 1981-03-27
FR2465791B1 (en) 1984-07-13
AU6247480A (en) 1981-04-09
GB2062689A (en) 1981-05-28

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