NL7805065A - Halfgeleidergeheugencel. - Google Patents

Halfgeleidergeheugencel.

Info

Publication number
NL7805065A
NL7805065A NL7805065A NL7805065A NL7805065A NL 7805065 A NL7805065 A NL 7805065A NL 7805065 A NL7805065 A NL 7805065A NL 7805065 A NL7805065 A NL 7805065A NL 7805065 A NL7805065 A NL 7805065A
Authority
NL
Netherlands
Prior art keywords
memory cell
semiconductor memory
semiconductor
cell
memory
Prior art date
Application number
NL7805065A
Other languages
English (en)
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of NL7805065A publication Critical patent/NL7805065A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
NL7805065A 1977-05-26 1978-05-11 Halfgeleidergeheugencel. NL7805065A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2723738A DE2723738C2 (de) 1977-05-26 1977-05-26 Halbleiterspeicherzelle für das nichtflüchtige Speichern elektrischer Ladung und Verfahren zu deren Programmierung

Publications (1)

Publication Number Publication Date
NL7805065A true NL7805065A (nl) 1978-11-28

Family

ID=6009899

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7805065A NL7805065A (nl) 1977-05-26 1978-05-11 Halfgeleidergeheugencel.

Country Status (6)

Country Link
US (1) US4196441A (nl)
JP (1) JPS53148286A (nl)
DE (1) DE2723738C2 (nl)
FR (1) FR2392468A1 (nl)
GB (1) GB1558545A (nl)
NL (1) NL7805065A (nl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4344222A (en) * 1979-05-21 1982-08-17 Ibm Corporation Bipolar compatible electrically alterable read-only memory
JPS5929155B2 (ja) * 1979-11-12 1984-07-18 富士通株式会社 半導体記憶装置
JPS5793577A (en) * 1980-12-03 1982-06-10 Mitsubishi Electric Corp Insulated gate type transistor
EP0078318A4 (en) * 1981-05-11 1983-06-24 Ncr Corp SEMICONDUCTOR MEMORY ARRANGEMENT WITH VARIABLE THRESHOLD.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3719866A (en) * 1970-12-03 1973-03-06 Ncr Semiconductor memory device
GB1363190A (en) * 1972-05-31 1974-08-14 Plessey Co Ltd Semiconductor memory device
US3846768A (en) * 1972-12-29 1974-11-05 Ibm Fixed threshold variable threshold storage device for use in a semiconductor storage array
JPS5024084A (nl) * 1973-07-05 1975-03-14
US3836894A (en) * 1974-01-22 1974-09-17 Westinghouse Electric Corp Mnos/sos random access memory
US4063267A (en) * 1976-06-21 1977-12-13 Mcdonnell Douglas Corporation MNOS Memory device

Also Published As

Publication number Publication date
JPS53148286A (en) 1978-12-23
US4196441A (en) 1980-04-01
FR2392468A1 (fr) 1978-12-22
DE2723738A1 (de) 1978-11-30
FR2392468B1 (nl) 1982-12-10
GB1558545A (en) 1980-01-03
DE2723738C2 (de) 1984-11-08

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BV The patent application has lapsed