NL7708369A - Geintegreerde halfgeleiderketen. - Google Patents

Geintegreerde halfgeleiderketen.

Info

Publication number
NL7708369A
NL7708369A NL7708369A NL7708369A NL7708369A NL 7708369 A NL7708369 A NL 7708369A NL 7708369 A NL7708369 A NL 7708369A NL 7708369 A NL7708369 A NL 7708369A NL 7708369 A NL7708369 A NL 7708369A
Authority
NL
Netherlands
Prior art keywords
integrated semiconductor
semiconductor chain
chain
integrated
semiconductor
Prior art date
Application number
NL7708369A
Other languages
English (en)
Dutch (nl)
Original Assignee
Nippon Musical Instruments Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Musical Instruments Mfg filed Critical Nippon Musical Instruments Mfg
Publication of NL7708369A publication Critical patent/NL7708369A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • H10D84/655Integrated injection logic using field effect injector structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs
    • H10D84/403Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
NL7708369A 1976-07-31 1977-07-28 Geintegreerde halfgeleiderketen. NL7708369A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9086076A JPS5325375A (en) 1976-07-31 1976-07-31 Semiconductor integrated circuit devi ce

Publications (1)

Publication Number Publication Date
NL7708369A true NL7708369A (nl) 1978-02-02

Family

ID=14010302

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7708369A NL7708369A (nl) 1976-07-31 1977-07-28 Geintegreerde halfgeleiderketen.

Country Status (5)

Country Link
US (1) US4255671A (index.php)
JP (1) JPS5325375A (index.php)
DE (1) DE2734509A1 (index.php)
FR (1) FR2393428A1 (index.php)
NL (1) NL7708369A (index.php)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608628B2 (ja) * 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置
US4402003A (en) * 1981-01-12 1983-08-30 Supertex, Inc. Composite MOS/bipolar power device
US4916505A (en) * 1981-02-03 1990-04-10 Research Corporation Of The University Of Hawaii Composite unipolar-bipolar semiconductor devices
US4441117A (en) * 1981-07-27 1984-04-03 Intersil, Inc. Monolithically merged field effect transistor and bipolar junction transistor
US4729008A (en) * 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
EP0152939B1 (en) * 1984-02-20 1993-07-28 Hitachi, Ltd. Arithmetic operation unit and arithmetic operation circuit
US4808547A (en) * 1986-07-07 1989-02-28 Harris Corporation Method of fabrication of high voltage IC bopolar transistors operable to BVCBO
US4789917A (en) * 1987-08-31 1988-12-06 National Semiconductor Corp. MOS I/O protection using switched body circuit design
US5104817A (en) * 1990-03-20 1992-04-14 Texas Instruments Incorporated Method of forming bipolar transistor with integral base emitter load resistor
DE4022139A1 (de) * 1990-07-11 1992-01-16 Telefunken Electronic Gmbh I(pfeil hoch)2(pfeil hoch)l-logik-gatter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3112411A (en) * 1960-05-02 1963-11-26 Texas Instruments Inc Ring counter utilizing bipolar field-effect devices
US3397326A (en) * 1965-03-30 1968-08-13 Westinghouse Electric Corp Bipolar transistor with field effect biasing means
US3510735A (en) * 1967-04-13 1970-05-05 Scient Data Systems Inc Transistor with integral pinch resistor
DE1574651C3 (de) * 1968-03-01 1976-01-02 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Flip-Flop-Speicherzelle
NL7107040A (index.php) * 1971-05-22 1972-11-24
BE788874A (fr) * 1971-09-17 1973-01-02 Western Electric Co Module de circuit integre
US3766449A (en) * 1972-03-27 1973-10-16 Ferranti Ltd Transistors
US3934399A (en) * 1972-06-12 1976-01-27 Kabushiki Kaisha Seikosha Electric timepiece incorporating rectifier and driving circuits integrated in a single chip
JPS4979793A (index.php) * 1972-12-08 1974-08-01

Also Published As

Publication number Publication date
FR2393428A1 (fr) 1978-12-29
FR2393428B1 (index.php) 1983-04-01
DE2734509A1 (de) 1978-02-02
US4255671A (en) 1981-03-10
JPS5325375A (en) 1978-03-09

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Legal Events

Date Code Title Description
BV The patent application has lapsed