JPS5325375A - Semiconductor integrated circuit devi ce - Google Patents

Semiconductor integrated circuit devi ce

Info

Publication number
JPS5325375A
JPS5325375A JP9086076A JP9086076A JPS5325375A JP S5325375 A JPS5325375 A JP S5325375A JP 9086076 A JP9086076 A JP 9086076A JP 9086076 A JP9086076 A JP 9086076A JP S5325375 A JPS5325375 A JP S5325375A
Authority
JP
Japan
Prior art keywords
integrated circuit
devi
semiconductor integrated
fets
injector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9086076A
Other languages
English (en)
Japanese (ja)
Inventor
Terumoto Nonaka
Takashi Yoshida
Takeshi Matsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Priority to JP9086076A priority Critical patent/JPS5325375A/ja
Priority to US05/819,405 priority patent/US4255671A/en
Priority to NL7708369A priority patent/NL7708369A/xx
Priority to FR7723550A priority patent/FR2393428A1/fr
Priority to DE19772734509 priority patent/DE2734509A1/de
Publication of JPS5325375A publication Critical patent/JPS5325375A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/655—Integrated injection logic using field effect injector structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP9086076A 1976-07-31 1976-07-31 Semiconductor integrated circuit devi ce Pending JPS5325375A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9086076A JPS5325375A (en) 1976-07-31 1976-07-31 Semiconductor integrated circuit devi ce
US05/819,405 US4255671A (en) 1976-07-31 1977-07-26 IIL Type semiconductor integrated circuit
NL7708369A NL7708369A (nl) 1976-07-31 1977-07-28 Geintegreerde halfgeleiderketen.
FR7723550A FR2393428A1 (fr) 1976-07-31 1977-07-29 Circuit integre a injection
DE19772734509 DE2734509A1 (de) 1976-07-31 1977-07-30 Integrierte halbleiterschaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9086076A JPS5325375A (en) 1976-07-31 1976-07-31 Semiconductor integrated circuit devi ce

Publications (1)

Publication Number Publication Date
JPS5325375A true JPS5325375A (en) 1978-03-09

Family

ID=14010302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9086076A Pending JPS5325375A (en) 1976-07-31 1976-07-31 Semiconductor integrated circuit devi ce

Country Status (5)

Country Link
US (1) US4255671A (index.php)
JP (1) JPS5325375A (index.php)
DE (1) DE2734509A1 (index.php)
FR (1) FR2393428A1 (index.php)
NL (1) NL7708369A (index.php)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608628B2 (ja) * 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置
US4402003A (en) * 1981-01-12 1983-08-30 Supertex, Inc. Composite MOS/bipolar power device
US4916505A (en) * 1981-02-03 1990-04-10 Research Corporation Of The University Of Hawaii Composite unipolar-bipolar semiconductor devices
US4441117A (en) * 1981-07-27 1984-04-03 Intersil, Inc. Monolithically merged field effect transistor and bipolar junction transistor
US4729008A (en) * 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
EP0152939B1 (en) * 1984-02-20 1993-07-28 Hitachi, Ltd. Arithmetic operation unit and arithmetic operation circuit
US4808547A (en) * 1986-07-07 1989-02-28 Harris Corporation Method of fabrication of high voltage IC bopolar transistors operable to BVCBO
US4789917A (en) * 1987-08-31 1988-12-06 National Semiconductor Corp. MOS I/O protection using switched body circuit design
US5104817A (en) * 1990-03-20 1992-04-14 Texas Instruments Incorporated Method of forming bipolar transistor with integral base emitter load resistor
DE4022139A1 (de) * 1990-07-11 1992-01-16 Telefunken Electronic Gmbh I(pfeil hoch)2(pfeil hoch)l-logik-gatter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3112411A (en) * 1960-05-02 1963-11-26 Texas Instruments Inc Ring counter utilizing bipolar field-effect devices
US3397326A (en) * 1965-03-30 1968-08-13 Westinghouse Electric Corp Bipolar transistor with field effect biasing means
US3510735A (en) * 1967-04-13 1970-05-05 Scient Data Systems Inc Transistor with integral pinch resistor
DE1574651C3 (de) * 1968-03-01 1976-01-02 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Flip-Flop-Speicherzelle
NL7107040A (index.php) * 1971-05-22 1972-11-24
BE788874A (fr) * 1971-09-17 1973-01-02 Western Electric Co Module de circuit integre
US3766449A (en) * 1972-03-27 1973-10-16 Ferranti Ltd Transistors
US3934399A (en) * 1972-06-12 1976-01-27 Kabushiki Kaisha Seikosha Electric timepiece incorporating rectifier and driving circuits integrated in a single chip
JPS4979793A (index.php) * 1972-12-08 1974-08-01

Also Published As

Publication number Publication date
FR2393428A1 (fr) 1978-12-29
FR2393428B1 (index.php) 1983-04-01
DE2734509A1 (de) 1978-02-02
NL7708369A (nl) 1978-02-02
US4255671A (en) 1981-03-10

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