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1974-08-21 |
1977-01-25 |
Intel Corporation |
Corrosive resistant semiconductor interconnect pad
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1975-03-26 |
1976-10-01 |
Hitachi Ltd |
Semiconductor device
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1976-08-23 |
1977-12-13 |
International Business Machines Corporation |
Process for forming a ledge-free aluminum-copper-silicon conductor structure
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1977-01-03 |
1979-08-14 |
Raytheon Company |
Semiconductor integrated circuit structures and manufacturing methods
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1977-07-07 |
1979-01-25 |
Schmidt Gmbh Karl |
Sicherheitslenkrad fuer kraftfahrzeuge
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1977-10-20 |
1979-10-23 |
International Business Machines Corporation |
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1981-09-15 |
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Dense dry etched multi-level metallurgy with non-overlapped vias
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1978-02-27 |
1982-06-01 |
Rca Corporation |
Use of silicide to bridge unwanted polycrystalline silicon P-N junction
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1978-12-26 |
1980-10-28 |
Rockwell International Corporation |
PNAF Etchant for aluminum and silicon
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1979-04-30 |
1981-05-12 |
Fairchild Camera & Instrument Corp. |
Process for patterning metal connections on a semiconductor structure by using a tungsten-titanium etch resistant layer
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1979-06-18 |
1981-01-09 |
Hitachi Ltd |
Method of photoetching
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1980-04-16 |
1981-11-13 |
Hitachi Ltd |
Semiconductor device
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1980-06-04 |
1981-12-10 |
Siemens AG, 1000 Berlin und 8000 München |
Verfahren zum passivieren von siliciumbauelementen
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1980-07-31 |
1982-02-19 |
Fujitsu Ltd |
Mamufacture of semiconductor device
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1980-10-27 |
1983-07-05 |
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MOS Integrated circuit having refractory metal or metal silicide interconnect layer
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1980-12-09 |
1983-08-16 |
Fairchild Camera & Instrument Corporation |
Multilayer metal silicide interconnections for integrated circuits
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1981-01-20 |
1982-07-28 |
Sanyo Electric Co Ltd |
Formation of ohmic contact in semiconductor device
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1981-03-31 |
1982-10-06 |
Fujitsu Ltd |
Formation of multilayer wiring
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1981-04-30 |
1983-02-15 |
International Business Machines Corporation |
Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering
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1983-05-31 |
1984-12-12 |
Toshiba Corp |
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JPS584948A
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1981-06-30 |
1983-01-12 |
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半導体装置
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1981-07-30 |
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1981-10-06 |
1985-07-24 |
Itt Ind Ltd |
Making al/si films by ion implantation; integrated circuits
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1981-11-30 |
1983-06-03 |
Toshiba Corp |
Ｍｏｓ型半導体装置及びその製造方法
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1981-12-16 |
1983-06-20 |
Fujitsu Ltd |
半導体装置
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1982-07-26 |
1984-01-17 |
Bell Telephone Laboratories, Incorporated |
Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch
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1982-07-29 |
1984-02-02 |
Siemens AG, 1000 Berlin und 8000 München |
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1982-09-30 |
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Advanced Micro Devices, Inc. |
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Advanced Micro Devices Inc |
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1982-11-12 |
1985-12-17 |
Nec Corporation |
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1983-12-15 |
1988-01-19 |
Laserpath Corporation |
Method of making electrical circuitry
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1983-12-22 |
1985-07-19 |
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1984-10-22 |
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Conductive non-metallic self-passivating non-corrodable IC bonding pads
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Method and apparatus for preparing conductive screened through holes employing metallic plated polymer thick films
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HDI land grid array packaged device having electrical and optical interconnects
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