NL7010205A - - Google Patents

Info

Publication number
NL7010205A
NL7010205A NL7010205A NL7010205A NL7010205A NL 7010205 A NL7010205 A NL 7010205A NL 7010205 A NL7010205 A NL 7010205A NL 7010205 A NL7010205 A NL 7010205A NL 7010205 A NL7010205 A NL 7010205A
Authority
NL
Netherlands
Application number
NL7010205A
Other versions
NL169936B (nl
NL169936C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NLAANVRAGE7010205,A priority Critical patent/NL169936C/xx
Application filed filed Critical
Priority to CA117580A priority patent/CA926029A/en
Priority to CA117,581A priority patent/CA1102012A/en
Priority to CH1001371A priority patent/CH542517A/de
Priority to GB3184571A priority patent/GB1353997A/en
Priority to SE08804/71A priority patent/SE368479B/xx
Priority to SE08805/71A priority patent/SE368480B/xx
Priority to GB3184071A priority patent/GB1353488A/en
Priority to CA117579A priority patent/CA927015A/en
Priority to SE08800/71A priority patent/SE368482B/xx
Priority to CH1000971A priority patent/CH528823A/de
Priority to CH1000771A priority patent/CH533364A/de
Priority to ES393040A priority patent/ES393040A1/es
Priority to DE2133977A priority patent/DE2133977C3/de
Priority to AT593871A priority patent/AT329115B/de
Priority to ES393041A priority patent/ES393041A1/es
Priority to ZA714522A priority patent/ZA714522B/xx
Priority to AT594371A priority patent/AT351596B/de
Priority to DE2133982A priority patent/DE2133982C2/de
Priority to US00160653A priority patent/US3718843A/en
Priority to ES393036A priority patent/ES393036A1/es
Priority to DE19712133981 priority patent/DE2133981C3/de
Priority to ZA714523A priority patent/ZA714523B/xx
Priority to BE769735A priority patent/BE769735A/xx
Priority to BE769734A priority patent/BE769734A/xx
Priority to BE769730A priority patent/BE769730A/xx
Priority to AT593771A priority patent/AT329114B/de
Priority to FR7125298A priority patent/FR2098324B1/fr
Priority to FR7125294A priority patent/FR2098320B1/fr
Priority to JP46050731A priority patent/JPS517550B1/ja
Priority to JP46050733A priority patent/JPS5029629B1/ja
Priority to JP46050732A priority patent/JPS5010101B1/ja
Publication of NL7010205A publication Critical patent/NL7010205A/xx
Priority to HK585/76*UA priority patent/HK58576A/xx
Publication of NL169936B publication Critical patent/NL169936B/xx
Application granted granted Critical
Publication of NL169936C publication Critical patent/NL169936C/xx

Links

Classifications

    • H10W10/13—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H10P14/61—
    • H10W10/00—
    • H10W10/01—
    • H10W10/0121—
    • H10W10/0126—
    • H10W15/00—
    • H10W15/01—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
NLAANVRAGE7010205,A 1970-07-10 1970-07-10 Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon. NL169936C (nl)

Priority Applications (33)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010205,A NL169936C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.
CA117,581A CA1102012A (en) 1970-07-10 1971-07-07 Semiconductor device, in particular integrated monolithic circuit, and method of manufacturing same
CH1001371A CH542517A (de) 1970-07-10 1971-07-07 Halbleitervorrichtung mit einem Transistor und Verfahren zur Herstellung der Halbleitervorrichtung
GB3184571A GB1353997A (en) 1970-07-10 1971-07-07 Semiconductor integrated devices
CA117580A CA926029A (en) 1970-07-10 1971-07-07 Semiconductor device having a transistor
SE08805/71A SE368480B (en:Method) 1970-07-10 1971-07-07
GB3184071A GB1353488A (en) 1970-07-10 1971-07-07 Semiconductor devices
CA117579A CA927015A (en) 1970-07-10 1971-07-07 Semiconductor device
SE08800/71A SE368482B (en:Method) 1970-07-10 1971-07-07
CH1000971A CH528823A (de) 1970-07-10 1971-07-07 Halbleiteranordnung
CH1000771A CH533364A (de) 1970-07-10 1971-07-07 Monolitische, intergrierte Schaltung
SE08804/71A SE368479B (en:Method) 1970-07-10 1971-07-07
BE769730A BE769730A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur
AT593871A AT329115B (de) 1970-07-10 1971-07-08 Halbleiteranordnung mit versenktem isoliermuster und an dieses grenzender dotierter zone
ES393041A ES393041A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
ZA714522A ZA714522B (en) 1970-07-10 1971-07-08 Semiconductor device having a transistor
ES393040A ES393040A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
DE2133982A DE2133982C2 (de) 1970-07-10 1971-07-08 Integriertes Halbleiterbauelement mit einer von einer vergrabenen Schicht gebildeten leitenden Verbindung
US00160653A US3718843A (en) 1970-07-10 1971-07-08 Compact semiconductor device for monolithic integrated circuits
ES393036A ES393036A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
DE19712133981 DE2133981C3 (de) 1970-07-10 1971-07-08 Halbleiterbauelement mit einem Halbleiterkörper mit einem Transistor und Verfahren zu seiner Herstellung
ZA714523A ZA714523B (en) 1970-07-10 1971-07-08 Semiconductor device,in particular integrated monolithic circuit and method of manufacturing same
BE769735A BE769735A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur, en particulier circuit monolithique integre,et procede de fabrication de ce dispositif
BE769734A BE769734A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur comportant un transistor
DE2133977A DE2133977C3 (de) 1970-07-10 1971-07-08 Halbleiterbauelement
AT593771A AT329114B (de) 1970-07-10 1971-07-08 Halbleiteranordnung, insbesondere monolithische integrierte schaltung, mit voneinander isolierten halbleiterinseln
AT594371A AT351596B (de) 1970-07-10 1971-07-08 Halbleiteranordnung, insbesondere monolithische integrierte schaltung mit von zum teil durch eine versenkte isolierschicht gebildete isolierzonen umgebenen inseln
FR7125298A FR2098324B1 (en:Method) 1970-07-10 1971-07-09
FR7125294A FR2098320B1 (en:Method) 1970-07-10 1971-07-09
JP46050731A JPS517550B1 (en:Method) 1970-07-10 1971-07-10
JP46050733A JPS5029629B1 (en:Method) 1970-07-10 1971-07-10
JP46050732A JPS5010101B1 (en:Method) 1970-07-10 1971-07-10
HK585/76*UA HK58576A (en) 1970-07-10 1976-09-23 Improvements in and relating to semiconductor integrated devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010205,A NL169936C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.

Publications (3)

Publication Number Publication Date
NL7010205A true NL7010205A (en:Method) 1972-01-12
NL169936B NL169936B (nl) 1982-04-01
NL169936C NL169936C (nl) 1982-09-01

Family

ID=19810545

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7010205,A NL169936C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.

Country Status (13)

Country Link
US (1) US3718843A (en:Method)
JP (1) JPS5029629B1 (en:Method)
AT (2) AT329114B (en:Method)
BE (1) BE769730A (en:Method)
CA (1) CA927015A (en:Method)
CH (1) CH528823A (en:Method)
DE (1) DE2133977C3 (en:Method)
ES (1) ES393036A1 (en:Method)
FR (1) FR2098320B1 (en:Method)
GB (1) GB1353488A (en:Method)
NL (1) NL169936C (en:Method)
SE (1) SE368482B (en:Method)
ZA (2) ZA714522B (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170901C (nl) * 1971-04-03 1983-01-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL166156C (nl) * 1971-05-22 1981-06-15 Philips Nv Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan.
GB1393027A (en) * 1972-05-30 1975-05-07 Ferranti Ltd Semiconductor devices
JPS5228550B2 (en:Method) * 1972-10-04 1977-07-27

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US34420A (en) * 1862-02-18 Improvement in tools
FR1458860A (fr) * 1964-12-24 1966-03-04 Ibm Dispositif à circuit intégré, utilisant une lamelle semi-conductrice pré-formée
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
US3597287A (en) * 1965-11-16 1971-08-03 Monsanto Co Low capacitance field effect transistor
FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication

Also Published As

Publication number Publication date
ZA714522B (en) 1973-02-28
DE2133977C3 (de) 1979-08-30
ES393036A1 (es) 1973-08-16
FR2098320A1 (en:Method) 1972-03-10
DE2133977A1 (de) 1972-01-13
BE769730A (fr) 1972-01-10
SE368482B (en:Method) 1974-07-01
JPS5029629B1 (en:Method) 1975-09-25
ATA593771A (de) 1975-07-15
FR2098320B1 (en:Method) 1974-10-11
GB1353488A (en) 1974-05-15
NL169936B (nl) 1982-04-01
NL169936C (nl) 1982-09-01
ATA593871A (de) 1975-07-15
DE2133977B2 (de) 1978-12-21
ZA714523B (en) 1973-02-28
US3718843A (en) 1973-02-27
AT329114B (de) 1976-04-26
CH528823A (de) 1972-09-30
AT329115B (de) 1976-04-26
CA927015A (en) 1973-05-22

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee