NL169936C - Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon. - Google Patents

Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.

Info

Publication number
NL169936C
NL169936C NLAANVRAGE7010205,A NL7010205A NL169936C NL 169936 C NL169936 C NL 169936C NL 7010205 A NL7010205 A NL 7010205A NL 169936 C NL169936 C NL 169936C
Authority
NL
Netherlands
Prior art keywords
semi
conductor
conductor body
oxyde
saturated
Prior art date
Application number
NLAANVRAGE7010205,A
Other languages
English (en)
Dutch (nl)
Other versions
NL169936B (nl
NL7010205A (en:Method
Inventor
Else Dr Kooi
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NLAANVRAGE7010205,A priority Critical patent/NL169936C/xx
Application filed by Philips Nv filed Critical Philips Nv
Priority to CA117580A priority patent/CA926029A/en
Priority to CA117,581A priority patent/CA1102012A/en
Priority to CH1001371A priority patent/CH542517A/de
Priority to GB3184571A priority patent/GB1353997A/en
Priority to SE08804/71A priority patent/SE368479B/xx
Priority to SE08805/71A priority patent/SE368480B/xx
Priority to GB3184071A priority patent/GB1353488A/en
Priority to CA117579A priority patent/CA927015A/en
Priority to SE08800/71A priority patent/SE368482B/xx
Priority to CH1000971A priority patent/CH528823A/de
Priority to CH1000771A priority patent/CH533364A/de
Priority to ES393040A priority patent/ES393040A1/es
Priority to DE2133977A priority patent/DE2133977C3/de
Priority to AT593871A priority patent/AT329115B/de
Priority to ES393041A priority patent/ES393041A1/es
Priority to ZA714522A priority patent/ZA714522B/xx
Priority to AT594371A priority patent/AT351596B/de
Priority to DE2133982A priority patent/DE2133982C2/de
Priority to US00160653A priority patent/US3718843A/en
Priority to ES393036A priority patent/ES393036A1/es
Priority to DE19712133981 priority patent/DE2133981C3/de
Priority to ZA714523A priority patent/ZA714523B/xx
Priority to BE769735A priority patent/BE769735A/xx
Priority to BE769734A priority patent/BE769734A/xx
Priority to BE769730A priority patent/BE769730A/xx
Priority to AT593771A priority patent/AT329114B/de
Priority to FR7125298A priority patent/FR2098324B1/fr
Priority to FR7125294A priority patent/FR2098320B1/fr
Priority to JP46050731A priority patent/JPS517550B1/ja
Priority to JP46050733A priority patent/JPS5029629B1/ja
Priority to JP46050732A priority patent/JPS5010101B1/ja
Publication of NL7010205A publication Critical patent/NL7010205A/xx
Priority to HK585/76*UA priority patent/HK58576A/xx
Publication of NL169936B publication Critical patent/NL169936B/xx
Application granted granted Critical
Publication of NL169936C publication Critical patent/NL169936C/xx

Links

Classifications

    • H10W10/13—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H10P14/61—
    • H10W10/00—
    • H10W10/01—
    • H10W10/0121—
    • H10W10/0126—
    • H10W15/00—
    • H10W15/01—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
NLAANVRAGE7010205,A 1970-07-10 1970-07-10 Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon. NL169936C (nl)

Priority Applications (33)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010205,A NL169936C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.
CA117,581A CA1102012A (en) 1970-07-10 1971-07-07 Semiconductor device, in particular integrated monolithic circuit, and method of manufacturing same
CH1001371A CH542517A (de) 1970-07-10 1971-07-07 Halbleitervorrichtung mit einem Transistor und Verfahren zur Herstellung der Halbleitervorrichtung
GB3184571A GB1353997A (en) 1970-07-10 1971-07-07 Semiconductor integrated devices
CA117580A CA926029A (en) 1970-07-10 1971-07-07 Semiconductor device having a transistor
SE08805/71A SE368480B (en:Method) 1970-07-10 1971-07-07
GB3184071A GB1353488A (en) 1970-07-10 1971-07-07 Semiconductor devices
CA117579A CA927015A (en) 1970-07-10 1971-07-07 Semiconductor device
SE08800/71A SE368482B (en:Method) 1970-07-10 1971-07-07
CH1000971A CH528823A (de) 1970-07-10 1971-07-07 Halbleiteranordnung
CH1000771A CH533364A (de) 1970-07-10 1971-07-07 Monolitische, intergrierte Schaltung
SE08804/71A SE368479B (en:Method) 1970-07-10 1971-07-07
BE769730A BE769730A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur
AT593871A AT329115B (de) 1970-07-10 1971-07-08 Halbleiteranordnung mit versenktem isoliermuster und an dieses grenzender dotierter zone
ES393041A ES393041A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
ZA714522A ZA714522B (en) 1970-07-10 1971-07-08 Semiconductor device having a transistor
ES393040A ES393040A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
DE2133982A DE2133982C2 (de) 1970-07-10 1971-07-08 Integriertes Halbleiterbauelement mit einer von einer vergrabenen Schicht gebildeten leitenden Verbindung
US00160653A US3718843A (en) 1970-07-10 1971-07-08 Compact semiconductor device for monolithic integrated circuits
ES393036A ES393036A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
DE19712133981 DE2133981C3 (de) 1970-07-10 1971-07-08 Halbleiterbauelement mit einem Halbleiterkörper mit einem Transistor und Verfahren zu seiner Herstellung
ZA714523A ZA714523B (en) 1970-07-10 1971-07-08 Semiconductor device,in particular integrated monolithic circuit and method of manufacturing same
BE769735A BE769735A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur, en particulier circuit monolithique integre,et procede de fabrication de ce dispositif
BE769734A BE769734A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur comportant un transistor
DE2133977A DE2133977C3 (de) 1970-07-10 1971-07-08 Halbleiterbauelement
AT593771A AT329114B (de) 1970-07-10 1971-07-08 Halbleiteranordnung, insbesondere monolithische integrierte schaltung, mit voneinander isolierten halbleiterinseln
AT594371A AT351596B (de) 1970-07-10 1971-07-08 Halbleiteranordnung, insbesondere monolithische integrierte schaltung mit von zum teil durch eine versenkte isolierschicht gebildete isolierzonen umgebenen inseln
FR7125298A FR2098324B1 (en:Method) 1970-07-10 1971-07-09
FR7125294A FR2098320B1 (en:Method) 1970-07-10 1971-07-09
JP46050731A JPS517550B1 (en:Method) 1970-07-10 1971-07-10
JP46050733A JPS5029629B1 (en:Method) 1970-07-10 1971-07-10
JP46050732A JPS5010101B1 (en:Method) 1970-07-10 1971-07-10
HK585/76*UA HK58576A (en) 1970-07-10 1976-09-23 Improvements in and relating to semiconductor integrated devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010205,A NL169936C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.

Publications (3)

Publication Number Publication Date
NL7010205A NL7010205A (en:Method) 1972-01-12
NL169936B NL169936B (nl) 1982-04-01
NL169936C true NL169936C (nl) 1982-09-01

Family

ID=19810545

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7010205,A NL169936C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.

Country Status (13)

Country Link
US (1) US3718843A (en:Method)
JP (1) JPS5029629B1 (en:Method)
AT (2) AT329114B (en:Method)
BE (1) BE769730A (en:Method)
CA (1) CA927015A (en:Method)
CH (1) CH528823A (en:Method)
DE (1) DE2133977C3 (en:Method)
ES (1) ES393036A1 (en:Method)
FR (1) FR2098320B1 (en:Method)
GB (1) GB1353488A (en:Method)
NL (1) NL169936C (en:Method)
SE (1) SE368482B (en:Method)
ZA (2) ZA714522B (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170901C (nl) * 1971-04-03 1983-01-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL166156C (nl) * 1971-05-22 1981-06-15 Philips Nv Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan.
GB1393027A (en) * 1972-05-30 1975-05-07 Ferranti Ltd Semiconductor devices
JPS5228550B2 (en:Method) * 1972-10-04 1977-07-27

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US34420A (en) * 1862-02-18 Improvement in tools
FR1458860A (fr) * 1964-12-24 1966-03-04 Ibm Dispositif à circuit intégré, utilisant une lamelle semi-conductrice pré-formée
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
US3597287A (en) * 1965-11-16 1971-08-03 Monsanto Co Low capacitance field effect transistor
FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication

Also Published As

Publication number Publication date
ZA714522B (en) 1973-02-28
DE2133977C3 (de) 1979-08-30
ES393036A1 (es) 1973-08-16
FR2098320A1 (en:Method) 1972-03-10
DE2133977A1 (de) 1972-01-13
BE769730A (fr) 1972-01-10
SE368482B (en:Method) 1974-07-01
JPS5029629B1 (en:Method) 1975-09-25
ATA593771A (de) 1975-07-15
FR2098320B1 (en:Method) 1974-10-11
GB1353488A (en) 1974-05-15
NL169936B (nl) 1982-04-01
ATA593871A (de) 1975-07-15
DE2133977B2 (de) 1978-12-21
ZA714523B (en) 1973-02-28
US3718843A (en) 1973-02-27
AT329114B (de) 1976-04-26
CH528823A (de) 1972-09-30
AT329115B (de) 1976-04-26
CA927015A (en) 1973-05-22
NL7010205A (en:Method) 1972-01-12

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee