ZA714522B - Semiconductor device having a transistor - Google Patents

Semiconductor device having a transistor

Info

Publication number
ZA714522B
ZA714522B ZA714522A ZA714522A ZA714522B ZA 714522 B ZA714522 B ZA 714522B ZA 714522 A ZA714522 A ZA 714522A ZA 714522 A ZA714522 A ZA 714522A ZA 714522 B ZA714522 B ZA 714522B
Authority
ZA
South Africa
Prior art keywords
transistor
semiconductor device
semiconductor
Prior art date
Application number
ZA714522A
Other languages
English (en)
Inventor
E Kooi
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of ZA714522B publication Critical patent/ZA714522B/xx

Links

Classifications

    • H10W10/13—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H10P14/61—
    • H10W10/00—
    • H10W10/01—
    • H10W10/0121—
    • H10W10/0126—
    • H10W15/00—
    • H10W15/01—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
ZA714522A 1970-07-10 1971-07-08 Semiconductor device having a transistor ZA714522B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010205,A NL169936C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.

Publications (1)

Publication Number Publication Date
ZA714522B true ZA714522B (en) 1973-02-28

Family

ID=19810545

Family Applications (2)

Application Number Title Priority Date Filing Date
ZA714522A ZA714522B (en) 1970-07-10 1971-07-08 Semiconductor device having a transistor
ZA714523A ZA714523B (en) 1970-07-10 1971-07-08 Semiconductor device,in particular integrated monolithic circuit and method of manufacturing same

Family Applications After (1)

Application Number Title Priority Date Filing Date
ZA714523A ZA714523B (en) 1970-07-10 1971-07-08 Semiconductor device,in particular integrated monolithic circuit and method of manufacturing same

Country Status (13)

Country Link
US (1) US3718843A (en:Method)
JP (1) JPS5029629B1 (en:Method)
AT (2) AT329114B (en:Method)
BE (1) BE769730A (en:Method)
CA (1) CA927015A (en:Method)
CH (1) CH528823A (en:Method)
DE (1) DE2133977C3 (en:Method)
ES (1) ES393036A1 (en:Method)
FR (1) FR2098320B1 (en:Method)
GB (1) GB1353488A (en:Method)
NL (1) NL169936C (en:Method)
SE (1) SE368482B (en:Method)
ZA (2) ZA714522B (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170901C (nl) * 1971-04-03 1983-01-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL166156C (nl) * 1971-05-22 1981-06-15 Philips Nv Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan.
GB1393027A (en) * 1972-05-30 1975-05-07 Ferranti Ltd Semiconductor devices
JPS5228550B2 (en:Method) * 1972-10-04 1977-07-27

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US34420A (en) * 1862-02-18 Improvement in tools
FR1458860A (fr) * 1964-12-24 1966-03-04 Ibm Dispositif à circuit intégré, utilisant une lamelle semi-conductrice pré-formée
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
US3597287A (en) * 1965-11-16 1971-08-03 Monsanto Co Low capacitance field effect transistor
FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication

Also Published As

Publication number Publication date
DE2133977C3 (de) 1979-08-30
ES393036A1 (es) 1973-08-16
FR2098320A1 (en:Method) 1972-03-10
DE2133977A1 (de) 1972-01-13
BE769730A (fr) 1972-01-10
SE368482B (en:Method) 1974-07-01
JPS5029629B1 (en:Method) 1975-09-25
ATA593771A (de) 1975-07-15
FR2098320B1 (en:Method) 1974-10-11
GB1353488A (en) 1974-05-15
NL169936B (nl) 1982-04-01
NL169936C (nl) 1982-09-01
ATA593871A (de) 1975-07-15
DE2133977B2 (de) 1978-12-21
ZA714523B (en) 1973-02-28
US3718843A (en) 1973-02-27
AT329114B (de) 1976-04-26
CH528823A (de) 1972-09-30
AT329115B (de) 1976-04-26
CA927015A (en) 1973-05-22
NL7010205A (en:Method) 1972-01-12

Similar Documents

Publication Publication Date Title
YU36420B (en) Semiconductor device
MY7500147A (en) Shielded semiconductor device
IT939645B (it) Dispositivo contenitore per dispositivi a semiconduttore
JPS52144984A (en) Semiconductor device
GB1343174A (en) Semiconductor devices
JPS55160466A (en) Semiconductor device
MY7400218A (en) Semiconductor device fabrication
HK59376A (en) Semiconductor integrated device
ZA714756B (en) Semiconductor memory device
IT939041B (it) Dispositivo a semiconduttore
AU4397372A (en) Semiconductor device
JPS51139276A (en) Semiconductor device
GB1345528A (en) Field effect transistor devices
AU3308571A (en) Manufacturing a semiconductor device
CA938736A (en) Field-effect semiconductor device
CA931661A (en) Semiconductor device
GB1349276A (en) Semiconductor device
GB1345800A (en) Making semi-conductor devices
ZA714522B (en) Semiconductor device having a transistor
MY7400018A (en) Semiconductor integrated circuit device
HK58776A (en) Semiconductor devices
CA926029A (en) Semiconductor device having a transistor
AU444395B2 (en) Semiconductor device having a lateral transistor
ZA715975B (en) Semiconductor device
AU1012470A (en) Semiconductor device having a lateral transistor