NL194140C - Halfgeleiderinrichting met matrixbedradingssectie en foto-elektrische omzetfunctie. - Google Patents
Halfgeleiderinrichting met matrixbedradingssectie en foto-elektrische omzetfunctie. Download PDFInfo
- Publication number
- NL194140C NL194140C NL9000419A NL9000419A NL194140C NL 194140 C NL194140 C NL 194140C NL 9000419 A NL9000419 A NL 9000419A NL 9000419 A NL9000419 A NL 9000419A NL 194140 C NL194140 C NL 194140C
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- conductive layer
- photoelectric conversion
- insulating layer
- unit
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 102
- 239000011159 matrix material Substances 0.000 title claims description 89
- 238000006243 chemical reaction Methods 0.000 claims description 128
- 239000000758 substrate Substances 0.000 claims description 53
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 398
- 239000003990 capacitor Substances 0.000 description 87
- 238000012546 transfer Methods 0.000 description 51
- 238000003860 storage Methods 0.000 description 43
- 229910021417 amorphous silicon Inorganic materials 0.000 description 25
- 229910052581 Si3N4 Inorganic materials 0.000 description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 23
- 239000010408 film Substances 0.000 description 21
- 238000009825 accumulation Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 238000010276 construction Methods 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
- H04N1/19—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays
- H04N1/191—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays the array comprising a one-dimensional array, or a combination of one-dimensional arrays, or a substantially one-dimensional array, e.g. an array of staggered elements
- H04N1/192—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line
- H04N1/193—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays
- H04N1/1931—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays with scanning elements electrically interconnected in groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3923989 | 1989-02-21 | ||
| JP1039239A JP2625540B2 (ja) | 1989-02-21 | 1989-02-21 | 半導体装置、光電変換装置、およびそれらの製造方法 |
| JP1045144A JPH02226764A (ja) | 1989-02-28 | 1989-02-28 | 半導体装置及びそれを用いた光電変換装置 |
| JP4514489 | 1989-02-28 | ||
| JP1045145A JPH02226765A (ja) | 1989-02-28 | 1989-02-28 | 半導体装置及びそれを用いた光電変換装置 |
| JP4514589 | 1989-02-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL9000419A NL9000419A (nl) | 1990-09-17 |
| NL194140B NL194140B (nl) | 2001-03-01 |
| NL194140C true NL194140C (nl) | 2001-07-03 |
Family
ID=27290083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL9000419A NL194140C (nl) | 1989-02-21 | 1990-02-21 | Halfgeleiderinrichting met matrixbedradingssectie en foto-elektrische omzetfunctie. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5061979A (fr) |
| DE (1) | DE4005494C2 (fr) |
| FR (1) | FR2643509B1 (fr) |
| GB (1) | GB2228367B (fr) |
| NL (1) | NL194140C (fr) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5360744A (en) * | 1990-01-11 | 1994-11-01 | Fuji Xerox Co., Ltd. | Method of manufacturing image sensor |
| US5204871A (en) * | 1990-03-29 | 1993-04-20 | Larkins Eric C | Bistable optical laser based on a heterostructure pnpn thyristor |
| JPH07221174A (ja) * | 1993-12-10 | 1995-08-18 | Canon Inc | 半導体装置及びその製造方法 |
| US6779166B2 (en) * | 2002-09-10 | 2004-08-17 | Sun Microsystems, Inc. | Optimal alternating power and ground shield assignment algorithm |
| JP4378137B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 読み出し回路、固体撮像装置、及びこれを用いたカメラシステム |
| US7989694B2 (en) * | 2004-12-06 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion element, solar battery, and photo sensor |
| JP5196739B2 (ja) * | 2006-06-09 | 2013-05-15 | キヤノン株式会社 | 放射線撮像装置及び放射線撮像システム |
| JP2010010478A (ja) * | 2008-06-27 | 2010-01-14 | Fujifilm Corp | 光電変換装置、光電変換装置の製造方法及び撮像装置 |
| JP2013058562A (ja) | 2011-09-07 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| JP5952548B2 (ja) * | 2011-11-10 | 2016-07-13 | キヤノン株式会社 | 半導体装置及びその駆動方法 |
| CN104321844B (zh) * | 2013-03-22 | 2017-09-19 | 松下电器产业株式会社 | 光电转换元件 |
| JP6266444B2 (ja) * | 2014-06-20 | 2018-01-24 | ザインエレクトロニクス株式会社 | 半導体装置 |
| JP6482790B2 (ja) | 2014-08-21 | 2019-03-13 | ルネサスエレクトロニクス株式会社 | 光半導体装置 |
| US10763298B2 (en) * | 2016-10-28 | 2020-09-01 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and image pickup system |
| KR20220149828A (ko) | 2021-04-30 | 2022-11-09 | 삼성전자주식회사 | 반도체 소자 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4327291A (en) * | 1980-06-16 | 1982-04-27 | Texas Instruments Incorporated | Infrared charge injection device imaging system |
| JPS61218167A (ja) * | 1985-03-25 | 1986-09-27 | Canon Inc | ラインセンサ |
| DE3751242T2 (de) * | 1986-01-24 | 1995-09-14 | Canon Kk | Photoelektrischer Wandler. |
| JPS6344759A (ja) * | 1986-08-12 | 1988-02-25 | Canon Inc | 光電変換装置 |
| EP0263497B1 (fr) * | 1986-10-07 | 1994-05-18 | Canon Kabushiki Kaisha | Dispositif de formation d'images |
| JP2702131B2 (ja) * | 1987-06-12 | 1998-01-21 | キヤノン株式会社 | 画像読取装置及び該装置を有する画像情報読取装置 |
| JPH0682820B2 (ja) * | 1987-06-26 | 1994-10-19 | キヤノン株式会社 | 光電変換装置 |
| EP0296603A3 (fr) * | 1987-06-26 | 1989-02-08 | Canon Kabushiki Kaisha | Convertisseur photoélectrique |
-
1990
- 1990-02-21 DE DE4005494A patent/DE4005494C2/de not_active Expired - Fee Related
- 1990-02-21 US US07/482,834 patent/US5061979A/en not_active Expired - Lifetime
- 1990-02-21 GB GB9003900A patent/GB2228367B/en not_active Expired - Fee Related
- 1990-02-21 NL NL9000419A patent/NL194140C/nl not_active IP Right Cessation
- 1990-02-21 FR FR9002126A patent/FR2643509B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE4005494A1 (de) | 1990-08-23 |
| FR2643509A1 (fr) | 1990-08-24 |
| GB9003900D0 (en) | 1990-04-18 |
| NL9000419A (nl) | 1990-09-17 |
| DE4005494C2 (de) | 1994-10-20 |
| GB2228367A (en) | 1990-08-22 |
| US5061979A (en) | 1991-10-29 |
| NL194140B (nl) | 2001-03-01 |
| GB2228367B (en) | 1993-04-07 |
| FR2643509B1 (fr) | 1998-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20050901 |