NL191631C - Inrichting en werkwijze voor het trekken van halfgeleiderstaven. - Google Patents

Inrichting en werkwijze voor het trekken van halfgeleiderstaven.

Info

Publication number
NL191631C
NL191631C NL7902556A NL7902556A NL191631C NL 191631 C NL191631 C NL 191631C NL 7902556 A NL7902556 A NL 7902556A NL 7902556 A NL7902556 A NL 7902556A NL 191631 C NL191631 C NL 191631C
Authority
NL
Netherlands
Prior art keywords
semiconductor rods
drawing semiconductor
rods
semiconductor
Prior art date
Application number
NL7902556A
Other languages
English (en)
Other versions
NL191631B (nl
NL7902556A (nl
Original Assignee
Wacker Siltronic Halbleitermat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic Halbleitermat filed Critical Wacker Siltronic Halbleitermat
Publication of NL7902556A publication Critical patent/NL7902556A/nl
Publication of NL191631B publication Critical patent/NL191631B/nl
Application granted granted Critical
Publication of NL191631C publication Critical patent/NL191631C/nl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL7902556A 1978-05-17 1979-04-02 Inrichting en werkwijze voor het trekken van halfgeleiderstaven. NL191631C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2821481A DE2821481C2 (de) 1978-05-17 1978-05-17 Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze

Publications (3)

Publication Number Publication Date
NL7902556A NL7902556A (nl) 1979-11-20
NL191631B NL191631B (nl) 1995-07-17
NL191631C true NL191631C (nl) 1995-11-20

Family

ID=6039538

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7902556A NL191631C (nl) 1978-05-17 1979-04-02 Inrichting en werkwijze voor het trekken van halfgeleiderstaven.

Country Status (5)

Country Link
US (1) US4330362A (nl)
JP (1) JPS54150378A (nl)
DE (1) DE2821481C2 (nl)
IT (1) IT1116182B (nl)
NL (1) NL191631C (nl)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3005492C2 (de) * 1980-02-14 1983-10-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski
JPS5717495A (en) * 1980-07-07 1982-01-29 Nippon Telegr & Teleph Corp <Ntt> Growing apparatus for single crystal
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS5913693A (ja) * 1982-07-15 1984-01-24 Toshiba Corp 化合物半導体単結晶育成装置
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
EP0221051A1 (en) * 1985-04-16 1987-05-13 Energy Materials Corporation Method and apparatus for growing single crystal bodies
DE3518829A1 (de) * 1985-05-24 1986-11-27 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von formkoerpern aus siliciumgranulat fuer die erzeugung von siliciumschmelzen
JPS62138384A (ja) * 1985-12-11 1987-06-22 Shin Etsu Handotai Co Ltd 単結晶の引上方法
US5004519A (en) * 1986-12-12 1991-04-02 Texas Instruments Incorporated Radiation heat shield for silicon melt-in manufacturing of single crystal silicon
US4786479A (en) * 1987-09-02 1988-11-22 The United States Of America As Represented By The United States Department Of Energy Apparatus for dendritic web growth systems
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
JP2579778B2 (ja) * 1987-10-01 1997-02-12 住友シチックス株式会社 半導体用単結晶の製造方法
DE3737051A1 (de) * 1987-10-31 1989-05-11 Leybold Ag Vorrichtung fuer die kontinuierliche zufuhr von schmelzgut
DE3865628D1 (de) * 1987-11-02 1991-11-21 Mitsubishi Materials Corp Einrichtung zur zuechtung von kristallen.
DE3840445C2 (de) * 1987-12-03 1996-08-14 Toshiba Ceramics Co Vorrichtung und Verfahren zum Ziehen eines Einkristalls
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
FI901414A0 (fi) * 1989-03-30 1990-03-21 Nippon Kokan Kk Anordning foer framstaellning av kiselenkristaller.
JPH035392A (ja) * 1989-05-30 1991-01-11 Nkk Corp シリコン単結晶の製造装置
US5269875A (en) * 1989-10-05 1993-12-14 Shin-Etsu Handotai Company, Limited Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
US5139750A (en) * 1989-10-16 1992-08-18 Nkk Corporation Silicon single crystal manufacturing apparatus
FI901415A0 (fi) * 1989-10-26 1990-03-21 Nippon Kokan Kk Anordning foer framstaellning av kiselenkristaller.
US5260037A (en) * 1990-03-12 1993-11-09 Osaka Titanium Co., Ltd. Apparatus for producing silicon single crystal
US5312600A (en) * 1990-03-20 1994-05-17 Toshiba Ceramics Co. Silicon single crystal manufacturing apparatus
JP2670548B2 (ja) * 1990-04-27 1997-10-29 東芝セラミックス株式会社 シリコン単結晶の製造装置
JPH04317493A (ja) * 1991-04-15 1992-11-09 Nkk Corp シリコン単結晶の製造装置
US5242667A (en) * 1991-07-26 1993-09-07 Ferrofluidics Corporation Solid pellet feeder for controlled melt replenishment in continuous crystal growing process
US5363795A (en) * 1991-09-04 1994-11-15 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
US5373805A (en) * 1991-10-17 1994-12-20 Shin-Etsu Handotai Co., Ltd. Single crystal pulling apparatus
JP2795036B2 (ja) * 1992-02-04 1998-09-10 信越半導体株式会社 単結晶引上装置
JP3478406B2 (ja) * 1992-09-09 2003-12-15 アルベマール・コーポレーシヨン 粒状物質の供給装置
DE4231162C2 (de) * 1992-09-17 1996-03-14 Wacker Siltronic Halbleitermat Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen
JP2807609B2 (ja) * 1993-01-28 1998-10-08 三菱マテリアルシリコン株式会社 単結晶の引上装置
JP2686223B2 (ja) * 1993-11-30 1997-12-08 住友シチックス株式会社 単結晶製造装置
IT1280041B1 (it) * 1993-12-16 1997-12-29 Wacker Chemitronic Procedimento per il tiraggio di un monocristallo di silicio
DE4414947C2 (de) * 1993-12-16 1998-12-17 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls aus Silicium
US5443034A (en) * 1994-08-17 1995-08-22 Solec International, Inc. Method and apparatus for increasing silicon ingot growth rate
US5683505A (en) * 1994-11-08 1997-11-04 Sumitomo Sitix Corporation Process for producing single crystals
DE4442829A1 (de) * 1994-12-01 1996-06-05 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zur Herstellung eines Einkristalls
DE19539316A1 (de) * 1995-09-26 1997-03-27 Leybold Ag Kristallziehanlage
EP0765954B1 (de) * 1995-09-26 1999-04-28 Balzers und Leybold Deutschland Holding Aktiengesellschaft Kristallziehanlage
JP3840683B2 (ja) * 1996-01-12 2006-11-01 株式会社Ｓｕｍｃｏ 単結晶引上方法
DE19615991A1 (de) * 1996-04-09 1997-12-11 Forschungsverbund Berlin Ev Verfahren und Züchtungskammer zum Ziehen von Mischkristallen nach der Czochralski-Methode
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
US6059876A (en) * 1997-02-06 2000-05-09 William H. Robinson Method and apparatus for growing crystals
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
JPH11209193A (ja) * 1998-01-22 1999-08-03 Sumitomo Metal Ind Ltd 単結晶引き上げ装置
JPH11268987A (ja) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
US6143073A (en) * 1998-11-19 2000-11-07 Heraeus Shin-Etsu America Methods and apparatus for minimizing white point defects in quartz glass crucibles
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
JP2004521057A (ja) * 2000-12-22 2004-07-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 半導体成長用の結晶引上機の気体環境をモニタするためのプロセス
US7635414B2 (en) * 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
DE102005006186A1 (de) * 2005-02-10 2006-08-24 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt
DE102006002682A1 (de) * 2006-01-19 2007-08-02 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe
US8152921B2 (en) * 2006-09-01 2012-04-10 Okmetic Oyj Crystal manufacturing
JP4582149B2 (ja) * 2008-01-10 2010-11-17 信越半導体株式会社 単結晶製造装置
KR20170109081A (ko) * 2009-09-02 2017-09-27 지티에이티 코포레이션 조절된 압력하에서 헬륨을 사용하는 고온 처리 방법
JP2011054821A (ja) * 2009-09-03 2011-03-17 Sumco Corp エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
DE102010023100A1 (de) 2010-06-09 2011-12-15 Siltronic Ag Vorrichtung zum Ziehen eines Einkristalls aus Halbleitermaterial
MY159737A (en) 2010-09-03 2017-01-31 Gtat Ip Holding Llc Silicon single crystal doped with gallium, indium, or aluminum
JP6268936B2 (ja) * 2013-11-05 2018-01-31 株式会社Sumco シリコン単結晶製造方法
US10358740B2 (en) * 2014-07-25 2019-07-23 Corner Star Limited Crystal growing systems and methods including a passive heater
CN107075717B (zh) * 2014-09-19 2020-06-16 各星有限公司 用于防止熔体污染的拉晶机
JP6614380B1 (ja) 2019-03-20 2019-12-04 信越半導体株式会社 単結晶製造装置
TWI695915B (zh) * 2019-07-04 2020-06-11 環球晶圓股份有限公司 矽單晶長晶裝置
JP6825728B1 (ja) 2020-01-10 2021-02-03 信越半導体株式会社 単結晶製造装置
CN115074829B (zh) * 2022-07-13 2024-01-26 西安奕斯伟材料科技股份有限公司 拉晶炉

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US3359077A (en) * 1964-05-25 1967-12-19 Globe Union Inc Method of growing a crystal
US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
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US3692499A (en) * 1970-08-31 1972-09-19 Texas Instruments Inc Crystal pulling system
JPS4846578A (nl) * 1971-10-19 1973-07-03
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
DE2336234A1 (de) * 1973-07-17 1975-01-30 Licentia Gmbh Anordnung und verfahren zum ziehen eines einkristalls

Also Published As

Publication number Publication date
NL191631B (nl) 1995-07-17
JPS54150378A (en) 1979-11-26
US4330362A (en) 1982-05-18
IT1116182B (it) 1986-02-10
DE2821481A1 (de) 1979-11-22
NL7902556A (nl) 1979-11-20
IT7949049A0 (it) 1979-05-15
JPS5740119B2 (nl) 1982-08-25
DE2821481C2 (de) 1985-12-05

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Legal Events

Date Code Title Description
V4 Discontinued because of reaching the maximum lifetime of a patent

Free format text: 19990402