NL7902556A - DEVICE AND METHOD FOR PULLING VERY PURE SEMICONDUCTOR BARS FROM A MELT. - Google Patents

DEVICE AND METHOD FOR PULLING VERY PURE SEMICONDUCTOR BARS FROM A MELT.

Info

Publication number
NL7902556A
NL7902556A NL7902556A NL7902556A NL7902556A NL 7902556 A NL7902556 A NL 7902556A NL 7902556 A NL7902556 A NL 7902556A NL 7902556 A NL7902556 A NL 7902556A NL 7902556 A NL7902556 A NL 7902556A
Authority
NL
Netherlands
Prior art keywords
melt
pulling
pure semiconductor
semiconductor bars
bars
Prior art date
Application number
NL7902556A
Other languages
English (en)
Other versions
NL191631C (nl
NL191631B (nl
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE19782821481 priority Critical patent/DE2821481C2/de
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of NL7902556A publication Critical patent/NL7902556A/nl
Publication of NL191631B publication Critical patent/NL191631B/nl
Application granted granted Critical
Publication of NL191631C publication Critical patent/NL191631C/nl

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1056Seed pulling including details of precursor replenishment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/106Seed pulling including sealing means details
NL7902556A 1978-05-17 1979-04-02 Inrichting en werkwijze voor het trekken van halfgeleiderstaven. NL191631C (nl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19782821481 DE2821481C2 (nl) 1978-05-17 1978-05-17

Publications (3)

Publication Number Publication Date
NL7902556A true NL7902556A (nl) 1979-11-20
NL191631B NL191631B (nl) 1995-07-17
NL191631C NL191631C (nl) 1995-11-20

Family

ID=6039538

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7902556A NL191631C (nl) 1978-05-17 1979-04-02 Inrichting en werkwijze voor het trekken van halfgeleiderstaven.

Country Status (5)

Country Link
US (1) US4330362A (nl)
JP (1) JPS5740119B2 (nl)
DE (1) DE2821481C2 (nl)
IT (1) IT1116182B (nl)
NL (1) NL191631C (nl)

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DE3005492C2 (nl) * 1980-02-14 1983-10-27 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen, De
JPS613315B2 (nl) * 1980-07-07 1986-01-31 Nippon Denshin Denwa Kk
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS5913693A (en) * 1982-07-15 1984-01-24 Toshiba Corp Growth device for compound semiconductor single crystal
JPH0357072B2 (nl) * 1984-08-24 1991-08-30
WO1986006109A1 (en) * 1985-04-16 1986-10-23 Energy Materials Corporation Method and apparatus for growing single crystal bodies
DE3518829A1 (de) * 1985-05-24 1986-11-27 Heliotronic Gmbh Verfahren zur herstellung von formkoerpern aus siliciumgranulat fuer die erzeugung von siliciumschmelzen
JPH0335279B2 (nl) * 1985-12-11 1991-05-27 Shinetsu Handotai Kk
US5004519A (en) * 1986-12-12 1991-04-02 Texas Instruments Incorporated Radiation heat shield for silicon melt-in manufacturing of single crystal silicon
US4786479A (en) * 1987-09-02 1988-11-22 The United States Of America As Represented By The United States Department Of Energy Apparatus for dendritic web growth systems
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
JP2579778B2 (ja) * 1987-10-01 1997-02-12 住友シチックス株式会社 半導体用単結晶の製造方法
DE3737051A1 (de) * 1987-10-31 1989-05-11 Leybold Ag Vorrichtung fuer die kontinuierliche zufuhr von schmelzgut
EP0315156B1 (en) * 1987-11-02 1991-10-16 Mitsubishi Materials Corporation Apparatus for growing crystals
DE3840445C2 (de) * 1987-12-03 1996-08-14 Toshiba Ceramics Co Vorrichtung und Verfahren zum Ziehen eines Einkristalls
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
FI901415A0 (fi) * 1989-10-26 1990-03-21 Nippon Kokan Kk Anordning foer framstaellning av kiselenkristaller.
FI901414A0 (fi) * 1989-03-30 1990-03-21 Nippon Kokan Kk Anordning foer framstaellning av kiselenkristaller.
JPH035392A (en) * 1989-05-30 1991-01-11 Nkk Corp Production device of silicon single crystal
US5269875A (en) * 1989-10-05 1993-12-14 Shin-Etsu Handotai Company, Limited Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
WO1991005891A1 (en) * 1989-10-16 1991-05-02 Nkk Corporation Apparatus for manufacturing silicon single crystals
US5260037A (en) * 1990-03-12 1993-11-09 Osaka Titanium Co., Ltd. Apparatus for producing silicon single crystal
US5312600A (en) * 1990-03-20 1994-05-17 Toshiba Ceramics Co. Silicon single crystal manufacturing apparatus
JP2670548B2 (ja) * 1990-04-27 1997-10-29 東芝セラミックス株式会社 シリコン単結晶の製造装置
JPH04317493A (en) * 1991-04-15 1992-11-09 Nkk Corp Producing device for silicon single crystal
US5242667A (en) * 1991-07-26 1993-09-07 Ferrofluidics Corporation Solid pellet feeder for controlled melt replenishment in continuous crystal growing process
US5363795A (en) * 1991-09-04 1994-11-15 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
US5373805A (en) * 1991-10-17 1994-12-20 Shin-Etsu Handotai Co., Ltd. Single crystal pulling apparatus
JP2795036B2 (ja) * 1992-02-04 1998-09-10 信越半導体株式会社 単結晶引上装置
JP3478406B2 (ja) * 1992-09-09 2003-12-15 アルベマール・コーポレーシヨン 粒状物質の供給装置
DE4231162C2 (de) * 1992-09-17 1996-03-14 Wacker Siltronic Halbleitermat Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen
JP2807609B2 (ja) * 1993-01-28 1998-10-08 三菱マテリアルシリコン株式会社 単結晶の引上装置
US5683505A (en) * 1994-11-08 1997-11-04 Sumitomo Sitix Corporation Process for producing single crystals
JP2686223B2 (ja) * 1993-11-30 1997-12-08 住友シチックス株式会社 単結晶製造装置
IT1280041B1 (it) * 1993-12-16 1997-12-29 Wacker Chemitronic Procedimento per il tiraggio di un monocristallo di silicio
DE4414947C2 (de) * 1993-12-16 1998-12-17 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls aus Silicium
US5443034A (en) * 1994-08-17 1995-08-22 Solec International, Inc. Method and apparatus for increasing silicon ingot growth rate
DE4442829A1 (de) * 1994-12-01 1996-06-05 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zur Herstellung eines Einkristalls
EP0765954B1 (de) * 1995-09-26 1999-04-28 Balzers und Leybold Deutschland Holding Aktiengesellschaft Kristallziehanlage
DE19539316A1 (de) * 1995-09-26 1997-03-27 Leybold Ag Kristallziehanlage
JP3840683B2 (ja) * 1996-01-12 2006-11-01 株式会社Sumco 単結晶引上方法
DE19615991A1 (de) * 1996-04-09 1997-12-11 Forschungsverbund Berlin Ev Verfahren und Züchtungskammer zum Ziehen von Mischkristallen nach der Czochralski-Methode
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
US6059876A (en) * 1997-02-06 2000-05-09 William H. Robinson Method and apparatus for growing crystals
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
JPH11209193A (ja) * 1998-01-22 1999-08-03 Sumitomo Metal Ind Ltd 単結晶引き上げ装置
JPH11268987A (ja) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
US6143073A (en) * 1998-11-19 2000-11-07 Heraeus Shin-Etsu America Methods and apparatus for minimizing white point defects in quartz glass crucibles
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
JP2004521057A (ja) * 2000-12-22 2004-07-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッドMemc Electronic Materials,Incorporated 半導体成長用の結晶引上機の気体環境をモニタするためのプロセス
US7635414B2 (en) * 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
DE102005006186A1 (de) * 2005-02-10 2006-08-24 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt
DE102006002682A1 (de) * 2006-01-19 2007-08-02 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe
US8152921B2 (en) * 2006-09-01 2012-04-10 Okmetic Oyj Crystal manufacturing
JP4582149B2 (ja) * 2008-01-10 2010-11-17 信越半導体株式会社 単結晶製造装置
JP2013503811A (ja) * 2009-09-02 2013-02-04 ジーティー クリスタル システムズ エルエルシー ヘリウムを調整圧力下に使用した高温プロセスの改善
JP2011054821A (ja) * 2009-09-03 2011-03-17 Sumco Corp エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
DE102010023100A1 (de) 2010-06-09 2011-12-15 Siltronic Ag Vorrichtung zum Ziehen eines Einkristalls aus Halbleitermaterial
MY159737A (en) 2010-09-03 2017-01-31 Gtat Ip Holding Llc Silicon single crystal doped with gallium, indium, or aluminum
JP6268936B2 (ja) * 2013-11-05 2018-01-31 株式会社Sumco シリコン単結晶製造方法
US10358740B2 (en) * 2014-07-25 2019-07-23 Corner Star Limited Crystal growing systems and methods including a passive heater
WO2016044689A1 (en) * 2014-09-19 2016-03-24 Sunedison, Inc. Crystal puller for inhibiting melt contamination
TWI695915B (zh) * 2019-07-04 2020-06-11 環球晶圓股份有限公司 矽單晶長晶裝置

Citations (3)

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US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
US3359077A (en) * 1964-05-25 1967-12-19 Globe Union Inc Method of growing a crystal
GB1157224A (en) * 1966-10-14 1969-07-02 Gen Motors Corp Semiconductor Crystal Growing

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US3615878A (en) * 1970-01-30 1971-10-26 Westinghouse Electric Corp Process for the thermal treatment of a semiconductor material having a volatile component
US3692499A (en) * 1970-08-31 1972-09-19 Texas Instruments Inc Crystal pulling system
JPS4846578A (nl) * 1971-10-19 1973-07-03
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
DE2336234A1 (de) * 1973-07-17 1975-01-30 Licentia Gmbh Anordnung und verfahren zum ziehen eines einkristalls

Patent Citations (3)

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US3359077A (en) * 1964-05-25 1967-12-19 Globe Union Inc Method of growing a crystal
US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
GB1157224A (en) * 1966-10-14 1969-07-02 Gen Motors Corp Semiconductor Crystal Growing

Also Published As

Publication number Publication date
NL191631C (nl) 1995-11-20
DE2821481C2 (nl) 1985-12-05
IT7949049D0 (it) 1979-05-15
JPS5740119B2 (nl) 1982-08-25
US4330362A (en) 1982-05-18
IT1116182B (it) 1986-02-10
DE2821481A1 (de) 1979-11-22
JPS54150378A (en) 1979-11-26
NL191631B (nl) 1995-07-17

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Legal Events

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V4 Lapsed because of reaching the maxim lifetime of a patent

Free format text: 19990402