NL190331A - - Google Patents

Info

Publication number
NL190331A
NL190331A NL190331DA NL190331A NL 190331 A NL190331 A NL 190331A NL 190331D A NL190331D A NL 190331DA NL 190331 A NL190331 A NL 190331A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of NL190331A publication Critical patent/NL190331A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612Auxiliary members for layer connectors, e.g. spacers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528Semiconductor component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674Ge- or Si-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681Ga-, In-, Tl- or Group VA metal-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736Al-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12806Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826Group VIB metal-base component
    • Y10T428/12833Alternative to or next to each other
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12861Group VIII or IB metal-base component
    • Y10T428/12889Au-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
NL190331D 1954-08-26 NL190331A (hu)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL820621X 1954-08-26
US52876255A 1955-08-16 1955-08-16
US718872A US2990502A (en) 1954-08-26 1958-03-03 Method of alloying a rectifying connection to a semi-conductive member, and semi-conductive devices made by said method

Publications (1)

Publication Number Publication Date
NL190331A true NL190331A (hu) 1900-01-01

Family

ID=32397777

Family Applications (2)

Application Number Title Priority Date Filing Date
NL98125D NL98125C (hu) 1954-08-26
NL190331D NL190331A (hu) 1954-08-26

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL98125D NL98125C (hu) 1954-08-26

Country Status (5)

Country Link
US (1) US2990502A (hu)
BE (1) BE540780A (hu)
DE (1) DE1018557B (hu)
GB (1) GB820621A (hu)
NL (2) NL190331A (hu)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1195868B (de) * 1957-01-23 1965-07-01 Siemens Ag Verfahren zum Herstellen eines elektrischen Halbleiterbauelementes mit einkristallinem Halbleiterkoerper
DE1160548B (de) * 1957-12-18 1964-01-02 Siemens Ag Verfahren zum Dotieren von halbleitendem Germanium oder Silizium mit Schwefel
FR1214352A (fr) * 1957-12-23 1960-04-08 Hughes Aircraft Co Dispositif semi-conducteur et procédé pour le fabriquer
BE575275A (hu) * 1958-02-03 1900-01-01
NL239159A (hu) * 1958-08-08
US3109225A (en) * 1958-08-29 1963-11-05 Rca Corp Method of mounting a semiconductor device
NL243222A (hu) * 1958-09-10 1900-01-01
DE1100818B (de) * 1958-09-24 1961-03-02 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit einem einkristallinen scheiben-foermigen Grundkoerper aus Silizium
NL242265A (hu) * 1958-09-30 1900-01-01
FR1240414A (fr) * 1958-11-14 1960-09-02 Sarkes Tarzian Diode
DE1292259B (de) * 1959-02-04 1969-04-10 Telefunken Patent Verfahren zum Herstellen von Transistoren durch Legieren
US3063879A (en) * 1959-02-26 1962-11-13 Westinghouse Electric Corp Configuration for semiconductor devices
DE1233949B (de) * 1959-07-13 1967-02-09 Siemens Ag Verfahren zur Herstellung einer Halbleiter-gleichrichteranordnung mit einem einkristallinen Halbleiterkoerper
NL254841A (hu) * 1959-08-14 1900-01-01
GB918755A (en) * 1959-09-21 1963-02-20 Ass Elect Ind Semi-conductor devices
NL249694A (hu) * 1959-12-30
DE1113523B (de) * 1960-02-18 1961-09-07 Siemens Ag Verfahren zur Herstellung eines Anschlusses an einer Halbleiter-anordnung
DE1116827B (de) * 1960-03-11 1961-11-09 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einer Legierungselektrode
NL269346A (hu) * 1960-09-20
DE1133834B (de) * 1960-09-21 1962-07-26 Siemens Ag Siliziumgleichrichter und Verfahren zu dessen Herstellung
DE1175797B (de) * 1960-12-22 1964-08-13 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen
DE1191044B (de) * 1960-12-03 1965-04-15 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen, wie Silizium-Flaechengleichrichter, -Transistoren oder Halbleiterstromtore
NL128768C (hu) * 1960-12-09
DE1130524B (de) * 1961-02-22 1962-05-30 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch Anlegieren von Elektroden und einer Traegerplattenanordnung an einen Halbleiterkoerper und Form zur Durchfuehrung des Verfahrens
DE1228002B (de) * 1961-03-07 1966-11-03 Gerhard Gille Dr Ing Trockengleichrichter
DE1141386B (de) * 1961-04-26 1962-12-20 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
DE1178148B (de) * 1961-06-20 1964-09-17 Siemens Ag Verfahren zur Vorbereitung von elektrischen Halbleiteranordnungen mit einlegierten Elekt-troden fuer das Anbringen von elektrischen An-schlussleitern an diesen Elektroden
DE1213055B (de) * 1961-07-24 1966-03-24 Siemens Ag Halbleiteranordnung mit einem einkristallinen Halbleiterkoerper
DE1240187B (de) * 1961-08-10 1967-05-11 Siemens Ag Verfahren zur Herstellung eines sperrfreien Kontaktes durch Auflegieren von Aluminium
DE1276210B (de) * 1961-08-31 1968-08-29 Siemens Ag Halbleiterbauelement
FR1350402A (fr) * 1962-03-16 1964-01-24 Gen Electric Dispositifs à semiconducteurs et méthodes de fabrication
CH396221A (de) * 1962-03-30 1965-07-31 Bbc Brown Boveri & Cie Halbleiteranordnung
DE1295697B (de) * 1962-05-23 1969-05-22 Walter Brandt Gmbh Halbleiterbauelement und Verfahren zu seiner Herstellung
DE1188207B (de) * 1962-08-27 1965-03-04 Intermetall Verfahren zum Herstellen eines plattenfoermigen Koerpers von hoher elektrischer Leitfaehigkeit
NL302321A (hu) * 1963-02-08
US3342646A (en) * 1963-02-19 1967-09-19 Rca Corp Thermoelectric generator including silicon germanium alloy thermoelements
GB1054422A (hu) * 1963-03-16 1900-01-01
DE1272457B (de) * 1963-07-18 1968-07-11 Philips Patentverwaltung Verfahren zum Herstellen einer Halbleiteranordnung
DE1639578B1 (de) * 1963-12-06 1969-09-04 Telefunken Patent Verfahren zum Herstellen von Halbleiterbauelementen ohne stoerenden Thyristoreffekt
US3375143A (en) * 1964-09-29 1968-03-26 Melpar Inc Method of making tunnel diode
DE1283969B (de) * 1965-02-16 1968-11-28 Itt Ind Gmbh Deutsche Halbleiterbauelement mit elektrisch isolierendem Zwischenkoerper zwischen dem Halbleiterkoerper und einem Gehaeuseteil, sowie Verfahren zu seiner Herstellung
DE1483298B1 (de) * 1965-06-11 1971-01-28 Siemens Ag Elektrische Kontaktanordnung zwischen einem Germanium-Silizium-Halbleiterkoerper und einem Kontaktstueck und Verfahren zur Herstellung derselben
CH426020A (de) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement
JPS5116264B2 (hu) * 1971-10-01 1976-05-22
JPS5836817B2 (ja) * 1976-05-17 1983-08-11 株式会社東芝 X線けい光増倍管
US4381214A (en) * 1980-06-26 1983-04-26 The General Electric Company Limited Process for growing crystals

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE500302A (hu) * 1949-11-30
BE527420A (hu) * 1953-03-20
US2702360A (en) * 1953-04-30 1955-02-15 Rca Corp Semiconductor rectifier

Also Published As

Publication number Publication date
DE1018557B (de) 1957-10-31
GB820621A (en) 1959-09-23
US2990502A (en) 1961-06-27
NL98125C (hu) 1900-01-01
BE540780A (hu) 1900-01-01

Similar Documents

Publication Publication Date Title
DE7701611U1 (hu)
AT13658B (hu)
AT11893B (hu)
FR337038A (hu)
DE7704002U1 (hu)
AT12678B (hu)
AT12081B (hu)
AT13354B (hu)
AT13445B (hu)
AT13324B (hu)
AT13070B (hu)
AT11740B (hu)
AT11697B (hu)
AT12723B (hu)
AT12663B (hu)
AT11599B (hu)
AT11625B (hu)
AT13361B (hu)
AT12024B (hu)
AT11578B (hu)
AT12432B (hu)
AT11680B (hu)
AT12657B (hu)
AT11618B (hu)
AT12071B (hu)