NL190331A - - Google Patents

Info

Publication number
NL190331A
NL190331A NL190331DA NL190331A NL 190331 A NL190331 A NL 190331A NL 190331D A NL190331D A NL 190331DA NL 190331 A NL190331 A NL 190331A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of NL190331A publication Critical patent/NL190331A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • H10P10/12Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/10Arrangements for heating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/381Auxiliary members
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528Semiconductor component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674Ge- or Si-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681Ga-, In-, Tl- or Group VA metal-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736Al-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12806Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826Group VIB metal-base component
    • Y10T428/12833Alternative to or next to each other
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12861Group VIII or IB metal-base component
    • Y10T428/12889Au-base component
NL190331D 1954-08-26 NL190331A (https=)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL820621X 1954-08-26
US52876255A 1955-08-16 1955-08-16
US718872A US2990502A (en) 1954-08-26 1958-03-03 Method of alloying a rectifying connection to a semi-conductive member, and semi-conductive devices made by said method

Publications (1)

Publication Number Publication Date
NL190331A true NL190331A (https=) 1900-01-01

Family

ID=32397777

Family Applications (2)

Application Number Title Priority Date Filing Date
NL190331D NL190331A (https=) 1954-08-26
NL98125D NL98125C (https=) 1954-08-26

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL98125D NL98125C (https=) 1954-08-26

Country Status (5)

Country Link
US (1) US2990502A (https=)
BE (1) BE540780A (https=)
DE (1) DE1018557B (https=)
GB (1) GB820621A (https=)
NL (2) NL98125C (https=)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1195868B (de) * 1957-01-23 1965-07-01 Siemens Ag Verfahren zum Herstellen eines elektrischen Halbleiterbauelementes mit einkristallinem Halbleiterkoerper
DE1160548B (de) * 1957-12-18 1964-01-02 Siemens Ag Verfahren zum Dotieren von halbleitendem Germanium oder Silizium mit Schwefel
FR1214352A (fr) * 1957-12-23 1960-04-08 Hughes Aircraft Co Dispositif semi-conducteur et procédé pour le fabriquer
BE575275A (https=) * 1958-02-03 1900-01-01
NL239159A (https=) * 1958-08-08
US3109225A (en) * 1958-08-29 1963-11-05 Rca Corp Method of mounting a semiconductor device
NL243222A (https=) * 1958-09-10 1900-01-01
DE1100818B (de) * 1958-09-24 1961-03-02 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit einem einkristallinen scheiben-foermigen Grundkoerper aus Silizium
NL242265A (https=) * 1958-09-30 1900-01-01
GB907268A (en) * 1958-11-14 1962-10-03 Sarkes Tarzian A method of making a semi-conductor diode
DE1292259B (de) * 1959-02-04 1969-04-10 Telefunken Patent Verfahren zum Herstellen von Transistoren durch Legieren
US3063879A (en) * 1959-02-26 1962-11-13 Westinghouse Electric Corp Configuration for semiconductor devices
DE1233949B (de) * 1959-07-13 1967-02-09 Siemens Ag Verfahren zur Herstellung einer Halbleiter-gleichrichteranordnung mit einem einkristallinen Halbleiterkoerper
NL254821A (https=) * 1959-08-14 1900-01-01
GB918755A (en) * 1959-09-21 1963-02-20 Ass Elect Ind Semi-conductor devices
NL249694A (https=) * 1959-12-30
DE1113523B (de) * 1960-02-18 1961-09-07 Siemens Ag Verfahren zur Herstellung eines Anschlusses an einer Halbleiter-anordnung
DE1116827B (de) * 1960-03-11 1961-11-09 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einer Legierungselektrode
NL269346A (https=) * 1960-09-20
DE1133834B (de) * 1960-09-21 1962-07-26 Siemens Ag Siliziumgleichrichter und Verfahren zu dessen Herstellung
DE1175797B (de) * 1960-12-22 1964-08-13 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen
DE1191044B (de) * 1960-12-03 1965-04-15 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen, wie Silizium-Flaechengleichrichter, -Transistoren oder Halbleiterstromtore
NL268503A (https=) * 1960-12-09
DE1130524B (de) * 1961-02-22 1962-05-30 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch Anlegieren von Elektroden und einer Traegerplattenanordnung an einen Halbleiterkoerper und Form zur Durchfuehrung des Verfahrens
DE1228002B (de) * 1961-03-07 1966-11-03 Gerhard Gille Dr Ing Trockengleichrichter
DE1141386B (de) * 1961-04-26 1962-12-20 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
DE1178148B (de) * 1961-06-20 1964-09-17 Siemens Ag Verfahren zur Vorbereitung von elektrischen Halbleiteranordnungen mit einlegierten Elekt-troden fuer das Anbringen von elektrischen An-schlussleitern an diesen Elektroden
DE1213055B (de) * 1961-07-24 1966-03-24 Siemens Ag Halbleiteranordnung mit einem einkristallinen Halbleiterkoerper
DE1240187B (de) * 1961-08-10 1967-05-11 Siemens Ag Verfahren zur Herstellung eines sperrfreien Kontaktes durch Auflegieren von Aluminium
DE1276210B (de) * 1961-08-31 1968-08-29 Siemens Ag Halbleiterbauelement
FR1350402A (fr) * 1962-03-16 1964-01-24 Gen Electric Dispositifs à semiconducteurs et méthodes de fabrication
CH396221A (de) * 1962-03-30 1965-07-31 Bbc Brown Boveri & Cie Halbleiteranordnung
DE1295697B (de) * 1962-05-23 1969-05-22 Walter Brandt Gmbh Halbleiterbauelement und Verfahren zu seiner Herstellung
DE1188207B (de) * 1962-08-27 1965-03-04 Intermetall Verfahren zum Herstellen eines plattenfoermigen Koerpers von hoher elektrischer Leitfaehigkeit
NL302321A (https=) * 1963-02-08
US3342646A (en) * 1963-02-19 1967-09-19 Rca Corp Thermoelectric generator including silicon germanium alloy thermoelements
GB1054422A (https=) * 1963-03-16 1900-01-01
DE1272457B (de) * 1963-07-18 1968-07-11 Philips Patentverwaltung Verfahren zum Herstellen einer Halbleiteranordnung
DE1639578B1 (de) * 1963-12-06 1969-09-04 Telefunken Patent Verfahren zum Herstellen von Halbleiterbauelementen ohne stoerenden Thyristoreffekt
US3375143A (en) * 1964-09-29 1968-03-26 Melpar Inc Method of making tunnel diode
DE1283969B (de) * 1965-02-16 1968-11-28 Itt Ind Gmbh Deutsche Halbleiterbauelement mit elektrisch isolierendem Zwischenkoerper zwischen dem Halbleiterkoerper und einem Gehaeuseteil, sowie Verfahren zu seiner Herstellung
DE1483298B1 (de) * 1965-06-11 1971-01-28 Siemens Ag Elektrische Kontaktanordnung zwischen einem Germanium-Silizium-Halbleiterkoerper und einem Kontaktstueck und Verfahren zur Herstellung derselben
CH426020A (de) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement
JPS5116264B2 (https=) * 1971-10-01 1976-05-22
JPS5836817B2 (ja) * 1976-05-17 1983-08-11 株式会社東芝 X線けい光増倍管
US4381214A (en) * 1980-06-26 1983-04-26 The General Electric Company Limited Process for growing crystals

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE500302A (https=) * 1949-11-30
BE527420A (https=) * 1953-03-20
US2702360A (en) * 1953-04-30 1955-02-15 Rca Corp Semiconductor rectifier

Also Published As

Publication number Publication date
GB820621A (en) 1959-09-23
NL98125C (https=) 1900-01-01
BE540780A (https=) 1900-01-01
US2990502A (en) 1961-06-27
DE1018557B (de) 1957-10-31

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