NL176412C - Werkwijze voor het vervaardigen van een halfgeleiderinrichting. - Google Patents

Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Info

Publication number
NL176412C
NL176412C NLAANVRAGE7311019,A NL7311019A NL176412C NL 176412 C NL176412 C NL 176412C NL 7311019 A NL7311019 A NL 7311019A NL 176412 C NL176412 C NL 176412C
Authority
NL
Netherlands
Prior art keywords
molar
etchant
concentration
ferricyanide
leaving
Prior art date
Application number
NLAANVRAGE7311019,A
Other languages
English (en)
Dutch (nl)
Other versions
NL7311019A (sv
NL176412B (nl
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL7311019A publication Critical patent/NL7311019A/xx
Publication of NL176412B publication Critical patent/NL176412B/xx
Application granted granted Critical
Publication of NL176412C publication Critical patent/NL176412C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30612Etching of AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822Beam leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
NLAANVRAGE7311019,A 1972-08-15 1973-08-09 Werkwijze voor het vervaardigen van een halfgeleiderinrichting. NL176412C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/280,784 US3947304A (en) 1972-08-15 1972-08-15 Etching of group III-V semiconductors

Publications (3)

Publication Number Publication Date
NL7311019A NL7311019A (sv) 1974-02-19
NL176412B NL176412B (nl) 1984-11-01
NL176412C true NL176412C (nl) 1985-04-01

Family

ID=23074635

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7311019,A NL176412C (nl) 1972-08-15 1973-08-09 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Country Status (9)

Country Link
US (1) US3947304A (sv)
JP (1) JPS525231B2 (sv)
BE (1) BE803610A (sv)
CA (1) CA988817A (sv)
FR (1) FR2196604A5 (sv)
GB (1) GB1401114A (sv)
IT (1) IT994153B (sv)
NL (1) NL176412C (sv)
SE (1) SE387198B (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5631320A (en) * 1979-08-22 1981-03-30 Mitsubishi Electric Corp Grounddfault current detector
JPS5631321A (en) * 1979-08-22 1981-03-30 Mitsubishi Electric Corp Grounddfault current detector
JPS5635626A (en) * 1979-08-24 1981-04-08 Mitsubishi Electric Corp Dc leakage breaker
JPS5635627A (en) * 1979-08-24 1981-04-08 Mitsubishi Electric Corp Dc leakage breaker
US4354898A (en) * 1981-06-24 1982-10-19 Bell Telephone Laboratories, Incorporated Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures
US4765865A (en) * 1987-05-04 1988-08-23 Ford Motor Company Silicon etch rate enhancement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3674580A (en) * 1970-05-08 1972-07-04 Bell Telephone Labor Inc Zirconium mask for semiconductor fabricated using alkaline etchants
US3716429A (en) * 1970-06-18 1973-02-13 Rca Corp Method of making semiconductor devices

Also Published As

Publication number Publication date
US3947304A (en) 1976-03-30
JPS525231B2 (sv) 1977-02-10
DE2340479B2 (de) 1977-04-14
GB1401114A (en) 1975-07-16
NL7311019A (sv) 1974-02-19
NL176412B (nl) 1984-11-01
BE803610A (fr) 1973-12-03
SE387198B (sv) 1976-08-30
DE2340479A1 (de) 1974-03-14
CA988817A (en) 1976-05-11
FR2196604A5 (sv) 1974-03-15
IT994153B (it) 1975-10-20
JPS4960478A (sv) 1974-06-12

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee