NL1029419A1 - Niveauverschuiver en werkwijze daarvoor. - Google Patents

Niveauverschuiver en werkwijze daarvoor.

Info

Publication number
NL1029419A1
NL1029419A1 NL1029419A NL1029419A NL1029419A1 NL 1029419 A1 NL1029419 A1 NL 1029419A1 NL 1029419 A NL1029419 A NL 1029419A NL 1029419 A NL1029419 A NL 1029419A NL 1029419 A1 NL1029419 A1 NL 1029419A1
Authority
NL
Netherlands
Prior art keywords
level shifter
shifter
level
Prior art date
Application number
NL1029419A
Other languages
English (en)
Other versions
NL1029419C2 (nl
Inventor
Nyun-Tae Kim
Ki-Hong Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of NL1029419A1 publication Critical patent/NL1029419A1/nl
Application granted granted Critical
Publication of NL1029419C2 publication Critical patent/NL1029419C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
NL1029419A 2004-07-16 2005-07-04 Niveauverschuiver en werkwijze daarvoor. NL1029419C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20040055482 2004-07-16
KR1020040055482A KR100711108B1 (ko) 2004-07-16 2004-07-16 레벨 쉬프터 및 레벨 쉬프팅 방법

Publications (2)

Publication Number Publication Date
NL1029419A1 true NL1029419A1 (nl) 2006-01-17
NL1029419C2 NL1029419C2 (nl) 2006-06-16

Family

ID=35636780

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1029419A NL1029419C2 (nl) 2004-07-16 2005-07-04 Niveauverschuiver en werkwijze daarvoor.

Country Status (6)

Country Link
US (1) US7554361B2 (nl)
JP (1) JP4870391B2 (nl)
KR (1) KR100711108B1 (nl)
CN (1) CN1722616B (nl)
NL (1) NL1029419C2 (nl)
TW (1) TW200610268A (nl)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7800426B2 (en) * 2008-03-27 2010-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Two voltage input level shifter with switches for core power off application
US9154133B2 (en) * 2011-09-28 2015-10-06 Texas Instruments Incorporated ESD robust level shifter
JP5694894B2 (ja) * 2011-10-24 2015-04-01 ルネサスエレクトロニクス株式会社 入力回路
US9431111B2 (en) * 2014-07-08 2016-08-30 Ememory Technology Inc. One time programming memory cell, array structure and operating method thereof
US9536593B1 (en) * 2016-05-23 2017-01-03 Qualcomm Incorporated Low power receiver with wide input voltage range
CN107564459B (zh) * 2017-10-31 2021-01-05 合肥京东方光电科技有限公司 移位寄存器单元、栅极驱动电路、显示装置及驱动方法
KR102514241B1 (ko) 2017-12-05 2023-03-27 삼성전자주식회사 레벨 쉬프터 회로
US11243588B2 (en) * 2018-05-30 2022-02-08 Hangzhou Canaan Intelligence Information Technology Co, Ltd Series circuit and computing device
US11314596B2 (en) * 2018-07-20 2022-04-26 Winbond Electronics Corp. Electronic apparatus and operative method
TWI704493B (zh) * 2019-05-07 2020-09-11 華邦電子股份有限公司 位元資料移位器
US11177011B2 (en) 2019-06-22 2021-11-16 Winbond Electronics Corp. Bit data shifter

Family Cites Families (34)

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JPS5380355A (en) * 1976-12-27 1978-07-15 Nippon Kokan Kk Sleeve for strip coil
DE3026040C2 (de) * 1980-07-09 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Schalter mit in Serie geschalteten MOS-FET
JPH0773204B2 (ja) * 1983-01-31 1995-08-02 株式会社日立製作所 半導体集積回路装置
JPS6051318A (ja) 1983-08-31 1985-03-22 Toshiba Corp Ｃｍｏｓシユミツト回路
JPS62194732A (ja) * 1986-02-21 1987-08-27 Hitachi Ltd デジタルバツフア回路
US4853561A (en) * 1987-06-10 1989-08-01 Regents Of The University Of Minnesota Family of noise-immune logic gates and memory cells
JP2585348B2 (ja) * 1988-02-22 1997-02-26 株式会社東芝 不揮発性半導体記憶装置
JPH0239622A (ja) * 1988-07-28 1990-02-08 Nec Corp 出力回路
JPH03157011A (ja) * 1989-08-22 1991-07-05 Fujitsu Ltd レベル変換回路及び該レベル変換回路を使用してなる遅延回路
US5036226A (en) * 1989-10-23 1991-07-30 Ncr Corporation Signal converting circuit
JPH05304462A (ja) * 1992-04-24 1993-11-16 Mitsubishi Electric Corp レベル変換器
US5304872A (en) * 1992-08-10 1994-04-19 Intel Corporation TTL/CMOS input buffer operable with three volt and five volt power supplies
JP3562725B2 (ja) * 1993-12-24 2004-09-08 川崎マイクロエレクトロニクス株式会社 出力バッファ回路、および入出力バッファ回路
JP2922424B2 (ja) * 1994-07-13 1999-07-26 松下電器産業株式会社 出力回路
EP0720294B1 (en) * 1994-12-30 1998-03-25 STMicroelectronics S.r.l. Interface circuit for electronic devices monolitically integrated on semiconductor by MOS/CMOS technology
JP3242042B2 (ja) 1996-10-30 2001-12-25 住友金属工業株式会社 レベルシフト回路
DE19652046C2 (de) * 1996-12-13 2003-08-28 Infineon Technologies Ag Verfahren zur Ermittlung der Temperatur eines Halbleiter-Chips
US5883528A (en) * 1997-03-20 1999-03-16 Cirrus Logic, Inc. Five volt tolerant TTL/CMOS and CMOS/CMOS voltage conversion circuit
US5793592A (en) * 1997-05-13 1998-08-11 International Business Machines Corporation Dynamic dielectric protection circuit for a receiver
JP3055505B2 (ja) 1997-10-15 2000-06-26 日本電気株式会社 レベル変換回路
US6069493A (en) * 1997-11-28 2000-05-30 Motorola, Inc. Input circuit and method for protecting the input circuit
KR100394611B1 (ko) * 1997-12-16 2003-12-24 현대자동차주식회사 펄스 폭 변조 신호 변환장치
US6031393A (en) * 1997-12-31 2000-02-29 Intel Corporation Pass gate input buffer for a mixed voltage environment
US5905621A (en) * 1998-01-09 1999-05-18 Ati Technologies Voltage scaling circuit for protecting an input node to a protected circuit
JPH11213022A (ja) 1998-01-26 1999-08-06 Toshiba Corp 設計支援方法及びそのシステム
US6249410B1 (en) * 1999-08-23 2001-06-19 Taiwan Semiconductor Manufacturing Company ESD protection circuit without overstress gate-driven effect
US6329841B1 (en) 2000-03-02 2001-12-11 Advanced Micro Devices, Inc. Level-shifter for extremely low power supply
US6917239B2 (en) 2000-10-24 2005-07-12 Fujitsu Limited Level shift circuit and semiconductor device
JP4641660B2 (ja) * 2001-05-18 2011-03-02 三菱電機株式会社 レベルシフト回路
JP2003168969A (ja) 2001-09-18 2003-06-13 Nec Microsystems Ltd レベルシフト回路
KR20040006766A (ko) 2002-07-15 2004-01-24 주식회사 하이닉스반도체 레벨 시프터
KR100432652B1 (ko) * 2002-08-01 2004-05-22 삼성에스디아이 주식회사 레벨 시프터 및 평판 표시 장치
JP3764135B2 (ja) * 2002-10-31 2006-04-05 Ｎｅｃエレクトロニクス株式会社 レベルシフタ
US7504861B2 (en) * 2003-11-20 2009-03-17 Transpacific Ip, Ltd. Input stage for mixed-voltage-tolerant buffer with reduced leakage

Also Published As

Publication number Publication date
US20060012396A1 (en) 2006-01-19
JP2006033825A (ja) 2006-02-02
US7554361B2 (en) 2009-06-30
KR100711108B1 (ko) 2007-04-24
KR20060006443A (ko) 2006-01-19
CN1722616A (zh) 2006-01-18
JP4870391B2 (ja) 2012-02-08
NL1029419C2 (nl) 2006-06-16
TW200610268A (en) 2006-03-16
CN1722616B (zh) 2010-10-27

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Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20060214

PD2B A search report has been drawn up