MY8700644A - Semiconductor integrated circuit devices and method of manufacturing the same - Google Patents

Semiconductor integrated circuit devices and method of manufacturing the same

Info

Publication number
MY8700644A
MY8700644A MY644/87A MY8700644A MY8700644A MY 8700644 A MY8700644 A MY 8700644A MY 644/87 A MY644/87 A MY 644/87A MY 8700644 A MY8700644 A MY 8700644A MY 8700644 A MY8700644 A MY 8700644A
Authority
MY
Malaysia
Prior art keywords
manufacturing
same
integrated circuit
semiconductor integrated
circuit devices
Prior art date
Application number
MY644/87A
Other languages
English (en)
Inventor
Setsuo Ogura
Shizuo Kondo
Makoto Furihata
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of MY8700644A publication Critical patent/MY8700644A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0107Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/018Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806Interface arrangements
    • H03K19/01818Interface arrangements for integrated injection logic (I2L)
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0107Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • H10D84/658Integrated injection logic integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
MY644/87A 1981-09-24 1987-12-30 Semiconductor integrated circuit devices and method of manufacturing the same MY8700644A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149433A JPS5851561A (ja) 1981-09-24 1981-09-24 半導体集積回路装置

Publications (1)

Publication Number Publication Date
MY8700644A true MY8700644A (en) 1987-12-31

Family

ID=15474999

Family Applications (1)

Application Number Title Priority Date Filing Date
MY644/87A MY8700644A (en) 1981-09-24 1987-12-30 Semiconductor integrated circuit devices and method of manufacturing the same

Country Status (8)

Country Link
JP (1) JPS5851561A (cg-RX-API-DMAC7.html)
DE (1) DE3235409A1 (cg-RX-API-DMAC7.html)
FR (2) FR2514200A1 (cg-RX-API-DMAC7.html)
GB (3) GB2107117B (cg-RX-API-DMAC7.html)
HK (2) HK69187A (cg-RX-API-DMAC7.html)
IT (1) IT1153730B (cg-RX-API-DMAC7.html)
MY (1) MY8700644A (cg-RX-API-DMAC7.html)
SG (1) SG40887G (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955052A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体集積回路装置の製造方法
JPS60253261A (ja) * 1984-05-29 1985-12-13 Clarion Co Ltd Iil素子を含む集積回路
JPH0387403A (ja) * 1989-08-31 1991-04-12 Mitsubishi Electric Corp 融雪装置
JP2550736B2 (ja) * 1990-02-14 1996-11-06 三菱電機株式会社 融雪装置
KR920015363A (ko) * 1991-01-22 1992-08-26 김광호 Ttl 입력 버퍼회로

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594241A (en) * 1968-01-11 1971-07-20 Tektronix Inc Monolithic integrated circuit including field effect transistors and bipolar transistors,and method of making
IT947674B (it) * 1971-04-28 1973-05-30 Ibm Tecnica di diffusione epitassiale per la fabbricazione di transisto ri bipolari e transistori fet
JPS52117086A (en) * 1976-03-29 1977-10-01 Sharp Corp Semiconductor device for touch type switch
JPS52156580A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Semiconductor integrated circuit device and its production
US4258379A (en) * 1978-09-25 1981-03-24 Hitachi, Ltd. IIL With in and outdiffused emitter pocket
US4429326A (en) * 1978-11-29 1984-01-31 Hitachi, Ltd. I2 L Memory with nonvolatile storage
JPS5611661A (en) * 1979-07-09 1981-02-05 Sankyo Seiki Mfg Co Ltd Magnetic card reader of normal card containing type
JPS56116661A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Also Published As

Publication number Publication date
GB8502454D0 (en) 1985-03-06
GB2107117A (en) 1983-04-20
FR2533367B1 (fr) 1986-01-24
FR2533367A1 (fr) 1984-03-23
GB2154060B (en) 1986-05-14
HK69187A (en) 1987-10-02
DE3235409A1 (de) 1983-04-14
FR2514200B1 (cg-RX-API-DMAC7.html) 1984-07-27
IT8223326A0 (it) 1982-09-17
SG40887G (en) 1987-07-17
IT1153730B (it) 1987-01-14
FR2514200A1 (fr) 1983-04-08
GB2154060A (en) 1985-08-29
HK69887A (en) 1987-10-02
GB2154061B (en) 1986-04-09
GB2154061A (en) 1985-08-29
JPS5851561A (ja) 1983-03-26
GB8502453D0 (en) 1985-03-06
GB2107117B (en) 1986-04-09

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