MY173452A - Method for growing monocrystalline diamonds - Google Patents

Method for growing monocrystalline diamonds

Info

Publication number
MY173452A
MY173452A MYPI2010004766A MYPI2010004766A MY173452A MY 173452 A MY173452 A MY 173452A MY PI2010004766 A MYPI2010004766 A MY PI2010004766A MY PI2010004766 A MYPI2010004766 A MY PI2010004766A MY 173452 A MY173452 A MY 173452A
Authority
MY
Malaysia
Prior art keywords
diamond
containing gas
nitrogen
vol
growing
Prior art date
Application number
MYPI2010004766A
Other languages
English (en)
Inventor
Shanker Misra Devi
Original Assignee
Indian Inst Technology Bombay
Iia Tech Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Indian Inst Technology Bombay, Iia Tech Pte Ltd filed Critical Indian Inst Technology Bombay
Publication of MY173452A publication Critical patent/MY173452A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
MYPI2010004766A 2008-06-18 2009-06-18 Method for growing monocrystalline diamonds MY173452A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200804637-7A SG157973A1 (en) 2008-06-18 2008-06-18 Method for growing monocrystalline diamonds

Publications (1)

Publication Number Publication Date
MY173452A true MY173452A (en) 2020-01-25

Family

ID=41434313

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2010004766A MY173452A (en) 2008-06-18 2009-06-18 Method for growing monocrystalline diamonds

Country Status (10)

Country Link
US (1) US8992877B2 (enExample)
EP (1) EP2262920B1 (enExample)
JP (1) JP2011524847A (enExample)
AU (1) AU2009260912B2 (enExample)
EA (1) EA201001601A1 (enExample)
IL (1) IL208829A0 (enExample)
MY (1) MY173452A (enExample)
NZ (1) NZ588375A (enExample)
SG (1) SG157973A1 (enExample)
WO (1) WO2009154577A1 (enExample)

Families Citing this family (15)

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MX2011006982A (es) 2008-12-29 2011-08-15 Kaz Europe Sa Cubierta para sonda con caracteristica coincidente para un termometro medico.
CN102272046A (zh) * 2009-04-28 2011-12-07 储晞 生产大颗粒金刚石的方法和设备
JP2011219285A (ja) * 2010-04-06 2011-11-04 Kobe Steel Ltd ダイヤモンドフレークの製造方法およびダイヤモンドフレークを含有した伝熱性強化材
US10258959B2 (en) 2010-08-11 2019-04-16 Unit Cell Diamond Llc Methods of producing heterodiamond and apparatus therefor
US9783885B2 (en) 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
CN103294439B (zh) * 2013-06-28 2016-03-02 华为技术有限公司 一种图像更新方法、系统及装置
WO2015183589A1 (en) * 2014-05-28 2015-12-03 Unit Cell Diamond Llc Diamond unit cell and diamond mass by combinatorial synthesis
SG10201505413VA (en) 2015-01-14 2016-08-30 Iia Technologies Pte Ltd Electronic device grade single crystal diamonds and method of producing the same
TW201641420A (zh) * 2015-03-09 2016-12-01 二A科技有限公司 單晶鑽石及其成長方法
CN107305185A (zh) * 2016-04-25 2017-10-31 潘栋雄 利用拉曼在三阶光谱的特征峰区分天然与合成钻石的方法
TWI706061B (zh) * 2017-04-26 2020-10-01 新加坡商二A 科技有限公司 大單晶鑽石及其生產方法
US11469077B2 (en) 2018-04-24 2022-10-11 FD3M, Inc. Microwave plasma chemical vapor deposition device and application thereof
GB201904435D0 (en) 2019-03-29 2019-05-15 Element Six Tech Ltd Single crystal synthetic diamond material
CN114318529B (zh) * 2021-11-26 2023-12-12 航天科工(长沙)新材料研究院有限公司 一种金刚石及其合成工艺

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900008505B1 (ko) * 1987-02-24 1990-11-24 세미콘덕터 에너지 라보라터리 캄파니 리미티드 탄소 석출을 위한 마이크로파 강화 cvd 방법
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
JP3374866B2 (ja) * 1993-08-30 2003-02-10 住友電気工業株式会社 半導体ダイヤモンド及びその形成方法
JP3484749B2 (ja) * 1994-04-04 2004-01-06 住友電気工業株式会社 ダイヤモンドの合成法
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
AU2004303615A1 (en) * 2003-12-12 2005-07-07 Element Six Limited Method of incorporating a mark in CVD diamond
CN101198544A (zh) * 2005-05-25 2008-06-11 卡尼吉华盛顿协会 快速生长速率的无色单晶cvd金刚石
JP5457028B2 (ja) * 2005-06-22 2014-04-02 エレメント シックス リミテッド ハイカラーのダイヤモンド層
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system

Also Published As

Publication number Publication date
US8992877B2 (en) 2015-03-31
NZ588375A (en) 2012-08-31
IL208829A0 (en) 2011-01-31
JP2011524847A (ja) 2011-09-08
US20110014112A1 (en) 2011-01-20
EA201001601A1 (ru) 2011-10-31
EP2262920B1 (en) 2016-10-19
AU2009260912B2 (en) 2014-02-13
SG157973A1 (en) 2010-01-29
EP2262920A4 (en) 2014-03-05
EP2262920A1 (en) 2010-12-22
WO2009154577A1 (en) 2009-12-23
AU2009260912A1 (en) 2009-12-23

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