EA201001601A1 - Способ выращивания монокристаллических алмазов - Google Patents

Способ выращивания монокристаллических алмазов

Info

Publication number
EA201001601A1
EA201001601A1 EA201001601A EA201001601A EA201001601A1 EA 201001601 A1 EA201001601 A1 EA 201001601A1 EA 201001601 A EA201001601 A EA 201001601A EA 201001601 A EA201001601 A EA 201001601A EA 201001601 A1 EA201001601 A1 EA 201001601A1
Authority
EA
Eurasian Patent Office
Prior art keywords
diamond
nitrogen
containing gas
cultivating
mono
Prior art date
Application number
EA201001601A
Other languages
English (en)
Russian (ru)
Inventor
Деви Шанкер Майсра
Original Assignee
Индиан Инститьюте Оф Технолоджи Бомбей
Нозоми Технотрон Пте Лтд.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Индиан Инститьюте Оф Технолоджи Бомбей, Нозоми Технотрон Пте Лтд. filed Critical Индиан Инститьюте Оф Технолоджи Бомбей
Publication of EA201001601A1 publication Critical patent/EA201001601A1/ru

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/18Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
EA201001601A 2008-06-18 2009-06-18 Способ выращивания монокристаллических алмазов EA201001601A1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG200804637-7A SG157973A1 (en) 2008-06-18 2008-06-18 Method for growing monocrystalline diamonds
PCT/SG2009/000218 WO2009154577A1 (en) 2008-06-18 2009-06-18 Method for growing monocrystalline diamonds

Publications (1)

Publication Number Publication Date
EA201001601A1 true EA201001601A1 (ru) 2011-10-31

Family

ID=41434313

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201001601A EA201001601A1 (ru) 2008-06-18 2009-06-18 Способ выращивания монокристаллических алмазов

Country Status (10)

Country Link
US (1) US8992877B2 (enExample)
EP (1) EP2262920B1 (enExample)
JP (1) JP2011524847A (enExample)
AU (1) AU2009260912B2 (enExample)
EA (1) EA201001601A1 (enExample)
IL (1) IL208829A0 (enExample)
MY (1) MY173452A (enExample)
NZ (1) NZ588375A (enExample)
SG (1) SG157973A1 (enExample)
WO (1) WO2009154577A1 (enExample)

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MX2011006982A (es) 2008-12-29 2011-08-15 Kaz Europe Sa Cubierta para sonda con caracteristica coincidente para un termometro medico.
CN102272046A (zh) * 2009-04-28 2011-12-07 储晞 生产大颗粒金刚石的方法和设备
JP2011219285A (ja) * 2010-04-06 2011-11-04 Kobe Steel Ltd ダイヤモンドフレークの製造方法およびダイヤモンドフレークを含有した伝熱性強化材
US10258959B2 (en) 2010-08-11 2019-04-16 Unit Cell Diamond Llc Methods of producing heterodiamond and apparatus therefor
US9783885B2 (en) 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
CN103294439B (zh) * 2013-06-28 2016-03-02 华为技术有限公司 一种图像更新方法、系统及装置
WO2015183589A1 (en) * 2014-05-28 2015-12-03 Unit Cell Diamond Llc Diamond unit cell and diamond mass by combinatorial synthesis
SG10201505413VA (en) 2015-01-14 2016-08-30 Iia Technologies Pte Ltd Electronic device grade single crystal diamonds and method of producing the same
TW201641420A (zh) * 2015-03-09 2016-12-01 二A科技有限公司 單晶鑽石及其成長方法
CN107305185A (zh) * 2016-04-25 2017-10-31 潘栋雄 利用拉曼在三阶光谱的特征峰区分天然与合成钻石的方法
TWI706061B (zh) * 2017-04-26 2020-10-01 新加坡商二A 科技有限公司 大單晶鑽石及其生產方法
US11469077B2 (en) 2018-04-24 2022-10-11 FD3M, Inc. Microwave plasma chemical vapor deposition device and application thereof
GB201904435D0 (en) 2019-03-29 2019-05-15 Element Six Tech Ltd Single crystal synthetic diamond material
CN114318529B (zh) * 2021-11-26 2023-12-12 航天科工(长沙)新材料研究院有限公司 一种金刚石及其合成工艺

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900008505B1 (ko) * 1987-02-24 1990-11-24 세미콘덕터 에너지 라보라터리 캄파니 리미티드 탄소 석출을 위한 마이크로파 강화 cvd 방법
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
JP3374866B2 (ja) * 1993-08-30 2003-02-10 住友電気工業株式会社 半導体ダイヤモンド及びその形成方法
JP3484749B2 (ja) * 1994-04-04 2004-01-06 住友電気工業株式会社 ダイヤモンドの合成法
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
AU2004303615A1 (en) * 2003-12-12 2005-07-07 Element Six Limited Method of incorporating a mark in CVD diamond
CN101198544A (zh) * 2005-05-25 2008-06-11 卡尼吉华盛顿协会 快速生长速率的无色单晶cvd金刚石
JP5457028B2 (ja) * 2005-06-22 2014-04-02 エレメント シックス リミテッド ハイカラーのダイヤモンド層
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system

Also Published As

Publication number Publication date
US8992877B2 (en) 2015-03-31
NZ588375A (en) 2012-08-31
IL208829A0 (en) 2011-01-31
JP2011524847A (ja) 2011-09-08
US20110014112A1 (en) 2011-01-20
EP2262920B1 (en) 2016-10-19
AU2009260912B2 (en) 2014-02-13
SG157973A1 (en) 2010-01-29
EP2262920A4 (en) 2014-03-05
MY173452A (en) 2020-01-25
EP2262920A1 (en) 2010-12-22
WO2009154577A1 (en) 2009-12-23
AU2009260912A1 (en) 2009-12-23

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