MY161218A - Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm - Google Patents
Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nmInfo
- Publication number
- MY161218A MY161218A MYPI2013002423A MYPI2013002423A MY161218A MY 161218 A MY161218 A MY 161218A MY PI2013002423 A MYPI2013002423 A MY PI2013002423A MY PI2013002423 A MYPI2013002423 A MY PI2013002423A MY 161218 A MY161218 A MY 161218A
- Authority
- MY
- Malaysia
- Prior art keywords
- surfactants
- line
- patterns
- space dimensions
- dimensions below
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161435820P | 2011-01-25 | 2011-01-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY161218A true MY161218A (en) | 2017-04-14 |
Family
ID=46580262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2013002423A MY161218A (en) | 2011-01-25 | 2012-01-17 | Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9236256B2 (https=) |
| EP (1) | EP2668248B1 (https=) |
| JP (1) | JP6118732B2 (https=) |
| KR (1) | KR102004148B1 (https=) |
| CN (1) | CN103328610B (https=) |
| IL (1) | IL227075A (https=) |
| MY (1) | MY161218A (https=) |
| RU (1) | RU2584204C2 (https=) |
| SG (1) | SG191738A1 (https=) |
| WO (1) | WO2012101545A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2668248B1 (en) | 2011-01-25 | 2019-02-27 | Basf Se | Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm |
| RU2585322C2 (ru) | 2011-03-18 | 2016-05-27 | Басф Се | Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее |
| SG11201500098XA (en) | 2012-07-10 | 2015-02-27 | Basf Se | Compositions for anti pattern collapse treatment comprising gemini additives |
| RU2015128132A (ru) * | 2012-12-14 | 2017-01-18 | Басф Се | Применение композиций, содержащих поверхностно-активное вещество и средство придания гидрофобности, для предохранения рельефа от разрушения при обработке рельефных материалов с линейными размерами, равными 50 нм или менее |
| WO2014095036A1 (de) | 2012-12-21 | 2014-06-26 | Merck Patent Gmbh | Fluortenside |
| EP2824511A1 (en) | 2013-07-11 | 2015-01-14 | Basf Se | The use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaning |
| US9126889B2 (en) | 2013-09-04 | 2015-09-08 | Honeywell International Inc. | Fluorosurfactants having improved biodegradability |
| CN107849493B (zh) | 2015-07-16 | 2020-10-09 | 巴斯夫欧洲公司 | 含有磺基酯的铵盐的减少缺陷用冲洗溶液 |
| EP3717609B1 (en) | 2017-11-28 | 2023-10-18 | Basf Se | Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product |
| JP2021525388A (ja) * | 2018-05-25 | 2021-09-24 | ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ | ５０ｎｍ以下のライン間寸法を有するパターン化材料を処理したときのパターン倒壊を回避するための溶媒混合物を含む組成物を使用する方法 |
| US11094527B2 (en) | 2018-10-10 | 2021-08-17 | International Business Machines Corporation | Wet clean solutions to prevent pattern collapse |
| US20220187712A1 (en) * | 2019-04-16 | 2022-06-16 | Basf Se | Composition for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below comprising a boron-type additive |
| KR102878549B1 (ko) * | 2021-07-21 | 2025-10-30 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성 수지 조성물의 제조 방법, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 수지, 및 수지의 제조 방법 |
| CN116120998B (zh) * | 2023-04-17 | 2023-06-16 | 甘肃华隆芯材料科技有限公司 | 一种冲洗组合物及其光刻胶图案形成方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU396664A1 (ru) * | 1971-01-25 | 1973-08-29 | Органический проявитель для позитивных фоторезистов | |
| CN1198181C (zh) * | 1996-03-07 | 2005-04-20 | 住友电木株式会社 | 包括具有酸不稳定侧基的多环聚合物的光刻胶组合物 |
| US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
| JP3835521B2 (ja) * | 2000-11-14 | 2006-10-18 | 信越化学工業株式会社 | レジスト表面処理剤組成物 |
| JP3553904B2 (ja) * | 2001-04-11 | 2004-08-11 | 日本電信電話株式会社 | 超臨界乾燥方法 |
| US6890452B2 (en) | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
| EP1553454A2 (en) * | 2003-12-22 | 2005-07-13 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
| US7063931B2 (en) * | 2004-01-08 | 2006-06-20 | International Business Machines Corporation | Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use |
| US20050161644A1 (en) * | 2004-01-23 | 2005-07-28 | Peng Zhang | Immersion lithography fluids |
| US20080299487A1 (en) * | 2007-05-31 | 2008-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography material and lithography process |
| DE102006032391A1 (de) * | 2006-07-04 | 2008-01-17 | Merck Patent Gmbh | Fluortenside |
| DE102006031149A1 (de) * | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | Fluortenside |
| DE102006031262A1 (de) * | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | Fluortenside |
| DE102006031151A1 (de) | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | Fluortenside |
| WO2008014980A1 (en) | 2006-08-02 | 2008-02-07 | The Furukawa Electric Co., Ltd. | Thermite welding lug |
| US20080280230A1 (en) | 2007-05-10 | 2008-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photolithography process including a chemical rinse |
| DE102008027930A1 (de) | 2008-06-12 | 2009-12-17 | Merck Patent Gmbh | Fluortenside |
| EP2668248B1 (en) | 2011-01-25 | 2019-02-27 | Basf Se | Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm |
-
2012
- 2012-01-17 EP EP12739044.1A patent/EP2668248B1/en active Active
- 2012-01-17 MY MYPI2013002423A patent/MY161218A/en unknown
- 2012-01-17 RU RU2013139216/05A patent/RU2584204C2/ru not_active IP Right Cessation
- 2012-01-17 US US13/979,076 patent/US9236256B2/en active Active
- 2012-01-17 WO PCT/IB2012/050218 patent/WO2012101545A1/en not_active Ceased
- 2012-01-17 JP JP2013549914A patent/JP6118732B2/ja not_active Expired - Fee Related
- 2012-01-17 CN CN201280006322.6A patent/CN103328610B/zh active Active
- 2012-01-17 SG SG2013046990A patent/SG191738A1/en unknown
- 2012-01-17 KR KR1020137019478A patent/KR102004148B1/ko active Active
-
2013
- 2013-06-20 IL IL227075A patent/IL227075A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| EP2668248A4 (en) | 2017-09-13 |
| EP2668248A1 (en) | 2013-12-04 |
| RU2584204C2 (ru) | 2016-05-20 |
| EP2668248B1 (en) | 2019-02-27 |
| KR20140004145A (ko) | 2014-01-10 |
| SG191738A1 (en) | 2013-08-30 |
| IL227075A (en) | 2016-07-31 |
| CN103328610B (zh) | 2016-08-10 |
| JP6118732B2 (ja) | 2017-04-19 |
| CN103328610A (zh) | 2013-09-25 |
| RU2013139216A (ru) | 2015-03-10 |
| JP2014508318A (ja) | 2014-04-03 |
| WO2012101545A1 (en) | 2012-08-02 |
| US9236256B2 (en) | 2016-01-12 |
| KR102004148B1 (ko) | 2019-07-26 |
| US20130288484A1 (en) | 2013-10-31 |
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