KR102004148B1 - 선 간격 치수 50 nm 미만을 갖는 패턴을 구비한 집적회로의 제조를 위한 3 개 이상의 단쇄 퍼플루오르화기를 갖는 계면활성제의 용도 - Google Patents

선 간격 치수 50 nm 미만을 갖는 패턴을 구비한 집적회로의 제조를 위한 3 개 이상의 단쇄 퍼플루오르화기를 갖는 계면활성제의 용도 Download PDF

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KR102004148B1
KR102004148B1 KR1020137019478A KR20137019478A KR102004148B1 KR 102004148 B1 KR102004148 B1 KR 102004148B1 KR 1020137019478 A KR1020137019478 A KR 1020137019478A KR 20137019478 A KR20137019478 A KR 20137019478A KR 102004148 B1 KR102004148 B1 KR 102004148B1
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group
surfactant
atom
photoresist layer
patterned
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KR20140004145A (ko
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안드레아스 클립
디터 마이어
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
KR1020137019478A 2011-01-25 2012-01-17 선 간격 치수 50 nm 미만을 갖는 패턴을 구비한 집적회로의 제조를 위한 3 개 이상의 단쇄 퍼플루오르화기를 갖는 계면활성제의 용도 Active KR102004148B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161435820P 2011-01-25 2011-01-25
US61/435,820 2011-01-25
PCT/IB2012/050218 WO2012101545A1 (en) 2011-01-25 2012-01-17 Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm

Publications (2)

Publication Number Publication Date
KR20140004145A KR20140004145A (ko) 2014-01-10
KR102004148B1 true KR102004148B1 (ko) 2019-07-26

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KR1020137019478A Active KR102004148B1 (ko) 2011-01-25 2012-01-17 선 간격 치수 50 nm 미만을 갖는 패턴을 구비한 집적회로의 제조를 위한 3 개 이상의 단쇄 퍼플루오르화기를 갖는 계면활성제의 용도

Country Status (10)

Country Link
US (1) US9236256B2 (https=)
EP (1) EP2668248B1 (https=)
JP (1) JP6118732B2 (https=)
KR (1) KR102004148B1 (https=)
CN (1) CN103328610B (https=)
IL (1) IL227075A (https=)
MY (1) MY161218A (https=)
RU (1) RU2584204C2 (https=)
SG (1) SG191738A1 (https=)
WO (1) WO2012101545A1 (https=)

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EP2668248B1 (en) 2011-01-25 2019-02-27 Basf Se Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm
RU2585322C2 (ru) 2011-03-18 2016-05-27 Басф Се Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее
SG11201500098XA (en) 2012-07-10 2015-02-27 Basf Se Compositions for anti pattern collapse treatment comprising gemini additives
RU2015128132A (ru) * 2012-12-14 2017-01-18 Басф Се Применение композиций, содержащих поверхностно-активное вещество и средство придания гидрофобности, для предохранения рельефа от разрушения при обработке рельефных материалов с линейными размерами, равными 50 нм или менее
WO2014095036A1 (de) 2012-12-21 2014-06-26 Merck Patent Gmbh Fluortenside
EP2824511A1 (en) 2013-07-11 2015-01-14 Basf Se The use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaning
US9126889B2 (en) 2013-09-04 2015-09-08 Honeywell International Inc. Fluorosurfactants having improved biodegradability
CN107849493B (zh) 2015-07-16 2020-10-09 巴斯夫欧洲公司 含有磺基酯的铵盐的减少缺陷用冲洗溶液
EP3717609B1 (en) 2017-11-28 2023-10-18 Basf Se Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product
JP2021525388A (ja) * 2018-05-25 2021-09-24 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ ５０ｎｍ以下のライン間寸法を有するパターン化材料を処理したときのパターン倒壊を回避するための溶媒混合物を含む組成物を使用する方法
US11094527B2 (en) 2018-10-10 2021-08-17 International Business Machines Corporation Wet clean solutions to prevent pattern collapse
US20220187712A1 (en) * 2019-04-16 2022-06-16 Basf Se Composition for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below comprising a boron-type additive
KR102878549B1 (ko) * 2021-07-21 2025-10-30 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성 수지 조성물의 제조 방법, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 수지, 및 수지의 제조 방법
CN116120998B (zh) * 2023-04-17 2023-06-16 甘肃华隆芯材料科技有限公司 一种冲洗组合物及其光刻胶图案形成方法

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Also Published As

Publication number Publication date
EP2668248A4 (en) 2017-09-13
EP2668248A1 (en) 2013-12-04
RU2584204C2 (ru) 2016-05-20
EP2668248B1 (en) 2019-02-27
KR20140004145A (ko) 2014-01-10
MY161218A (en) 2017-04-14
SG191738A1 (en) 2013-08-30
IL227075A (en) 2016-07-31
CN103328610B (zh) 2016-08-10
JP6118732B2 (ja) 2017-04-19
CN103328610A (zh) 2013-09-25
RU2013139216A (ru) 2015-03-10
JP2014508318A (ja) 2014-04-03
WO2012101545A1 (en) 2012-08-02
US9236256B2 (en) 2016-01-12
US20130288484A1 (en) 2013-10-31

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