MY149475A - Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics - Google Patents
Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronicsInfo
- Publication number
- MY149475A MY149475A MYPI20090622A MY149475A MY 149475 A MY149475 A MY 149475A MY PI20090622 A MYPI20090622 A MY PI20090622A MY 149475 A MY149475 A MY 149475A
- Authority
- MY
- Malaysia
- Prior art keywords
- stretchable
- semiconductors
- nanomembranes
- electronic circuits
- stretchable electronics
- Prior art date
Links
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
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- Micromachines (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Optical Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Pressure Sensors (AREA)
- Junction Field-Effect Transistors (AREA)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82468306P | 2006-09-06 | 2006-09-06 | |
| US94462607P | 2007-06-18 | 2007-06-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY149475A true MY149475A (en) | 2013-08-30 |
Family
ID=39158048
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI20090622 MY149475A (en) | 2006-09-06 | 2007-09-06 | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
| MYPI2012005126A MY172115A (en) | 2006-09-06 | 2007-09-06 | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2012005126A MY172115A (en) | 2006-09-06 | 2007-09-06 | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2064710A4 (cg-RX-API-DMAC7.html) |
| JP (3) | JP5578509B2 (cg-RX-API-DMAC7.html) |
| KR (5) | KR101612749B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN103213935B (cg-RX-API-DMAC7.html) |
| MY (2) | MY149475A (cg-RX-API-DMAC7.html) |
| TW (3) | TWI485863B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2008030960A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (181)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7557433B2 (en) | 2004-10-25 | 2009-07-07 | Mccain Joseph H | Microelectronic device with integrated energy source |
| EP1759422B1 (en) | 2004-06-04 | 2022-01-26 | The Board Of Trustees Of The University Of Illinois | Electrical device comprising printable semiconductor elements |
| US7521292B2 (en) | 2004-06-04 | 2009-04-21 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
| US8217381B2 (en) | 2004-06-04 | 2012-07-10 | The Board Of Trustees Of The University Of Illinois | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
| US7799699B2 (en) | 2004-06-04 | 2010-09-21 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
| KR101615255B1 (ko) | 2006-09-20 | 2016-05-11 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 전사가능한 반도체 구조들, 디바이스들 및 디바이스 컴포넌트들을 만들기 위한 릴리스 방안들 |
| CN102176486B (zh) | 2007-01-17 | 2015-06-24 | 伊利诺伊大学评议会 | 通过基于印刷的组装制造的光学系统 |
| WO2009111641A1 (en) | 2008-03-05 | 2009-09-11 | The Board Of Trustees Of The University Of Illinois | Stretchable and foldable electronic devices |
| US8470701B2 (en) | 2008-04-03 | 2013-06-25 | Advanced Diamond Technologies, Inc. | Printable, flexible and stretchable diamond for thermal management |
| US7927976B2 (en) | 2008-07-23 | 2011-04-19 | Semprius, Inc. | Reinforced composite stamp for dry transfer printing of semiconductor elements |
| US8679888B2 (en) | 2008-09-24 | 2014-03-25 | The Board Of Trustees Of The University Of Illinois | Arrays of ultrathin silicon solar microcells |
| JP5646492B2 (ja) | 2008-10-07 | 2014-12-24 | エムシー10 インコーポレイテッドMc10,Inc. | 伸縮可能な集積回路およびセンサアレイを有する装置 |
| US9119533B2 (en) | 2008-10-07 | 2015-09-01 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
| US8886334B2 (en) | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
| US9123614B2 (en) | 2008-10-07 | 2015-09-01 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
| US8097926B2 (en) | 2008-10-07 | 2012-01-17 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
| US8372726B2 (en) | 2008-10-07 | 2013-02-12 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
| US8389862B2 (en) | 2008-10-07 | 2013-03-05 | Mc10, Inc. | Extremely stretchable electronics |
| US9545285B2 (en) | 2011-10-05 | 2017-01-17 | Mc10, Inc. | Cardiac catheter employing conformal electronics for mapping |
| KR101041139B1 (ko) * | 2008-11-04 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치 |
| EP2356680B1 (en) * | 2008-11-12 | 2015-04-08 | Mc10, Inc. | Extremely stretchable electronics |
| KR101736722B1 (ko) | 2008-11-19 | 2017-05-17 | 셈프리어스 아이엔씨. | 전단-보조 탄성 스탬프 전사에 의한 프린팅 반도체 소자 |
| JP2012515436A (ja) * | 2009-01-12 | 2012-07-05 | エムシー10 インコーポレイテッド | 非平面撮像アレイの方法及び応用 |
| WO2010086034A1 (en) | 2009-01-30 | 2010-08-05 | Interuniversitair Microelektronica Centrum Vzw | Stretchable electronic device |
| US8865489B2 (en) | 2009-05-12 | 2014-10-21 | The Board Of Trustees Of The University Of Illinois | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
| FR2947063B1 (fr) | 2009-06-19 | 2011-07-01 | Commissariat Energie Atomique | Retroprojecteur |
| US8261660B2 (en) | 2009-07-22 | 2012-09-11 | Semprius, Inc. | Vacuum coupled tool apparatus for dry transfer printing semiconductor elements |
| KR101077789B1 (ko) | 2009-08-07 | 2011-10-28 | 한국과학기술원 | Led 디스플레이 제조 방법 및 이에 의하여 제조된 led 디스플레이 |
| KR101113692B1 (ko) | 2009-09-17 | 2012-02-27 | 한국과학기술원 | 태양전지 제조방법 및 이에 의하여 제조된 태양전지 |
| WO2011041727A1 (en) | 2009-10-01 | 2011-04-07 | Mc10, Inc. | Protective cases with integrated electronics |
| US9936574B2 (en) | 2009-12-16 | 2018-04-03 | The Board Of Trustees Of The University Of Illinois | Waterproof stretchable optoelectronics |
| WO2011115643A1 (en) | 2010-03-17 | 2011-09-22 | The Board Of Trustees Of The University Of Illinois | Implantable biomedical devices on bioresorbable substrates |
| US10441185B2 (en) | 2009-12-16 | 2019-10-15 | The Board Of Trustees Of The University Of Illinois | Flexible and stretchable electronic systems for epidermal electronics |
| US10918298B2 (en) | 2009-12-16 | 2021-02-16 | The Board Of Trustees Of The University Of Illinois | High-speed, high-resolution electrophysiology in-vivo using conformal electronics |
| KR101405463B1 (ko) | 2010-01-15 | 2014-06-27 | 그래핀스퀘어 주식회사 | 기체 및 수분 차단용 그래핀 보호막, 이의 형성 방법 및 그의 용도 |
| US8450779B2 (en) * | 2010-03-08 | 2013-05-28 | International Business Machines Corporation | Graphene based three-dimensional integrated circuit device |
| WO2011112931A1 (en) | 2010-03-12 | 2011-09-15 | The Board Of Trustees Of The University Of Illinois | Waterproof stretchable optoelectronics |
| US9603243B2 (en) | 2010-04-12 | 2017-03-21 | Tufts University | Silk electronic components |
| EP2622219B1 (en) * | 2010-09-27 | 2021-08-11 | Techtonic Pty Ltd | Undulatory structures |
| CN102001622B (zh) * | 2010-11-08 | 2013-03-20 | 中国科学技术大学 | 空气桥式纳米器件的制备方法 |
| US9442285B2 (en) | 2011-01-14 | 2016-09-13 | The Board Of Trustees Of The University Of Illinois | Optical component array having adjustable curvature |
| WO2012125494A2 (en) | 2011-03-11 | 2012-09-20 | Mc10, Inc. | Integrated devices to facilitate quantitative assays and diagnostics |
| TWI455341B (zh) * | 2011-03-21 | 2014-10-01 | Motech Ind Inc | Method for manufacturing solar cells |
| CA2833440A1 (en) * | 2011-04-18 | 2012-10-26 | Bennett Fleet (Quebec) Inc. | Process and apparatus for continuously encapsulating elongated components and encapsulated elongated components obtained |
| WO2012158709A1 (en) | 2011-05-16 | 2012-11-22 | The Board Of Trustees Of The University Of Illinois | Thermally managed led arrays assembled by printing |
| EP2712491B1 (en) | 2011-05-27 | 2019-12-04 | Mc10, Inc. | Flexible electronic structure |
| EP2713863B1 (en) | 2011-06-03 | 2020-01-15 | The Board of Trustees of the University of Illionis | Conformable actively multiplexed high-density surface electrode array for brain interfacing |
| CN102244015B (zh) * | 2011-06-17 | 2012-12-19 | 华中科技大学 | 一种在预拉伸的弹性基板上进行柔性电子图案化的方法 |
| US9757050B2 (en) | 2011-08-05 | 2017-09-12 | Mc10, Inc. | Catheter balloon employing force sensing elements |
| JP6320920B2 (ja) | 2011-08-05 | 2018-05-09 | エムシーテン、インコーポレイテッド | センシング素子を利用したバルーン・カテーテルの装置及び製造方法 |
| EP2786131B1 (en) | 2011-09-01 | 2018-11-07 | Mc10, Inc. | Electronics for detection of a condition of tissue |
| CN108389893A (zh) | 2011-12-01 | 2018-08-10 | 伊利诺伊大学评议会 | 经设计以经历可编程转变的瞬态器件 |
| FR2985371A1 (fr) * | 2011-12-29 | 2013-07-05 | Commissariat Energie Atomique | Procede de fabrication d'une structure multicouche sur un support |
| US8492208B1 (en) | 2012-01-05 | 2013-07-23 | International Business Machines Corporation | Compressive (PFET) and tensile (NFET) channel strain in nanowire FETs fabricated with a replacement gate process |
| CN102610534A (zh) * | 2012-01-13 | 2012-07-25 | 华中科技大学 | 一种可伸缩rfid电子标签及其制造方法 |
| KR102034575B1 (ko) * | 2012-03-19 | 2019-10-21 | 루미리즈 홀딩 비.브이. | 인광체의 도포 전 및 후의 발광 장치들에 대한 싱귤레이션 |
| CN102610672A (zh) * | 2012-03-23 | 2012-07-25 | 合肥工业大学 | 一种异质结型光电探测器及其制备方法 |
| KR20150004819A (ko) * | 2012-03-30 | 2015-01-13 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 표면에 상응하는 부속체 장착가능한 전자 장치 |
| US9226402B2 (en) | 2012-06-11 | 2015-12-29 | Mc10, Inc. | Strain isolation structures for stretchable electronics |
| US9247637B2 (en) | 2012-06-11 | 2016-01-26 | Mc10, Inc. | Strain relief structures for stretchable interconnects |
| US9295842B2 (en) | 2012-07-05 | 2016-03-29 | Mc10, Inc. | Catheter or guidewire device including flow sensing and use thereof |
| WO2014007871A1 (en) | 2012-07-05 | 2014-01-09 | Mc10, Inc. | Catheter device including flow sensing |
| CN102903841B (zh) * | 2012-09-18 | 2015-09-09 | 中国科学院宁波材料技术与工程研究所 | 一种温度控制的磁电子器件、其制备方法及应用 |
| US9171794B2 (en) | 2012-10-09 | 2015-10-27 | Mc10, Inc. | Embedding thin chips in polymer |
| KR20150072415A (ko) | 2012-10-09 | 2015-06-29 | 엠씨10, 인크 | 의류에 집적되는 컨포멀 전자기기 |
| CN102983791A (zh) * | 2012-10-26 | 2013-03-20 | 苏州大学 | 温差交流发电装置及其发电方法 |
| WO2014104267A1 (en) | 2012-12-28 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102051519B1 (ko) | 2013-02-25 | 2019-12-03 | 삼성전자주식회사 | 파이버 상에 형성된 박막 트랜지스터 및 그 제조 방법 |
| WO2014169170A1 (en) | 2013-04-12 | 2014-10-16 | The Board Of Trustees Of The University Of Illinois | Inorganic and organic transient electronic devices |
| US9706647B2 (en) | 2013-05-14 | 2017-07-11 | Mc10, Inc. | Conformal electronics including nested serpentine interconnects |
| KR20160040670A (ko) | 2013-08-05 | 2016-04-14 | 엠씨10, 인크 | 곡면부착형 전자기기를 포함하는 유연한 온도 센서 |
| KR20160065948A (ko) | 2013-10-07 | 2016-06-09 | 엠씨10, 인크 | 감지 및 분석용 등각 센서 시스템 |
| CN103560157B (zh) * | 2013-11-19 | 2016-02-24 | 中国科学院上海微系统与信息技术研究所 | 应变结构及其制作方法 |
| US9949691B2 (en) | 2013-11-22 | 2018-04-24 | Mc10, Inc. | Conformal sensor systems for sensing and analysis of cardiac activity |
| KR102396850B1 (ko) | 2014-01-06 | 2022-05-11 | 메디데이타 솔루션즈, 인코포레이티드 | 봉지형 컨포멀 전자 시스템 및 디바이스, 및 이의 제조 및 사용 방법 |
| JP6637896B2 (ja) | 2014-03-04 | 2020-01-29 | エムシー10 インコーポレイテッドMc10,Inc. | 電子デバイス用の可撓性を有するマルチパート封止ハウジングを備えるコンフォーマルなicデバイス |
| EP3117206A4 (en) | 2014-03-12 | 2017-11-15 | Mc10, Inc. | Quantification of a change in assay |
| CN103869607A (zh) * | 2014-03-18 | 2014-06-18 | 无锡中微掩模电子有限公司 | 二元掩模铬金属膜去除方法 |
| EP3138028A4 (en) * | 2014-05-02 | 2018-01-24 | Synopsys, Inc. | 3d tcad simulation |
| US10207916B2 (en) | 2014-05-28 | 2019-02-19 | 3M Innovative Properties Company | MEMS devices on flexible substrate |
| SG11201610371TA (en) | 2014-07-11 | 2017-01-27 | Intel Corp | Bendable and stretchable electronic devices and methods |
| US11472171B2 (en) * | 2014-07-20 | 2022-10-18 | X Display Company Technology Limited | Apparatus and methods for micro-transfer-printing |
| KR102161644B1 (ko) | 2014-08-20 | 2020-10-06 | 삼성디스플레이 주식회사 | 스트레쳐블 표시 패널 및 이를 포함하는 표시 장치 |
| CN104153128B (zh) * | 2014-08-26 | 2017-03-08 | 青岛大学 | 一种基于有序排列扭曲结构柔性可拉伸器件的制备方法 |
| US9899330B2 (en) | 2014-10-03 | 2018-02-20 | Mc10, Inc. | Flexible electronic circuits with embedded integrated circuit die |
| US10297572B2 (en) | 2014-10-06 | 2019-05-21 | Mc10, Inc. | Discrete flexible interconnects for modules of integrated circuits |
| USD781270S1 (en) | 2014-10-15 | 2017-03-14 | Mc10, Inc. | Electronic device having antenna |
| US9398705B2 (en) * | 2014-12-02 | 2016-07-19 | Flextronics Ap, Llc. | Stretchable printed electronic sheets to electrically connect uneven two dimensional and three dimensional surfaces |
| US9991326B2 (en) | 2015-01-14 | 2018-06-05 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device comprising flexible substrate and light-emitting element |
| KR102356697B1 (ko) * | 2015-01-15 | 2022-01-27 | 삼성디스플레이 주식회사 | 신축성 표시 장치 및 그의 제조 방법 |
| KR102456698B1 (ko) | 2015-01-15 | 2022-10-19 | 삼성디스플레이 주식회사 | 신축성 표시 장치 |
| KR102320382B1 (ko) | 2015-01-28 | 2021-11-02 | 삼성디스플레이 주식회사 | 전자 장치 |
| WO2016134306A1 (en) | 2015-02-20 | 2016-08-25 | Mc10, Inc. | Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation |
| WO2016140961A1 (en) | 2015-03-02 | 2016-09-09 | Mc10, Inc. | Perspiration sensor |
| KR102335807B1 (ko) * | 2015-03-10 | 2021-12-08 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR102385327B1 (ko) * | 2015-04-06 | 2022-04-12 | 삼성디스플레이 주식회사 | 플렉서블 표시 장치 및 이의 제조 방법 |
| AU2016270807A1 (en) | 2015-06-01 | 2017-12-14 | The Board Of Trustees Of The University Of Illinois | Miniaturized electronic systems with wireless power and near-field communication capabilities |
| CN107923988A (zh) | 2015-06-01 | 2018-04-17 | 伊利诺伊大学评议会 | Uv感测的替代方法 |
| US10026721B2 (en) | 2015-06-30 | 2018-07-17 | Apple Inc. | Electronic devices with soft input-output components |
| US9841548B2 (en) | 2015-06-30 | 2017-12-12 | Apple Inc. | Electronic devices with soft input-output components |
| CN105049033B (zh) * | 2015-07-01 | 2017-11-24 | 东南大学 | 基于砷化镓基低漏电流双悬臂梁开关的或非门 |
| US10653332B2 (en) | 2015-07-17 | 2020-05-19 | Mc10, Inc. | Conductive stiffener, method of making a conductive stiffener, and conductive adhesive and encapsulation layers |
| WO2017031129A1 (en) | 2015-08-19 | 2017-02-23 | Mc10, Inc. | Wearable heat flux devices and methods of use |
| US10300371B2 (en) | 2015-10-01 | 2019-05-28 | Mc10, Inc. | Method and system for interacting with a virtual environment |
| CN108289630A (zh) | 2015-10-05 | 2018-07-17 | Mc10股份有限公司 | 用于神经调节和刺激的方法和系统 |
| DE102015014256B4 (de) | 2015-11-05 | 2020-06-18 | Airbus Defence and Space GmbH | Mikroelektronisches Modul zur Reinigung einer Oberfläche, Modularray und Verfahren zur Reinigung einer Oberfläche |
| US10925543B2 (en) | 2015-11-11 | 2021-02-23 | The Board Of Trustees Of The University Of Illinois | Bioresorbable silicon electronics for transient implants |
| WO2017085849A1 (ja) * | 2015-11-19 | 2017-05-26 | 三井金属鉱業株式会社 | 誘電体層を有するプリント配線板の製造方法 |
| CN105405983B (zh) * | 2015-12-14 | 2017-05-10 | 吉林大学 | 具有周期性规则褶皱结构的可拉伸有机电致发光器件 |
| CN106920800B (zh) * | 2015-12-25 | 2019-07-23 | 昆山工研院新型平板显示技术中心有限公司 | 柔性显示器件及其形成方法 |
| WO2017147053A1 (en) | 2016-02-22 | 2017-08-31 | Mc10, Inc. | System, device, and method for coupled hub and sensor node on-body acquisition of sensor information |
| WO2017147052A1 (en) | 2016-02-22 | 2017-08-31 | Mc10, Inc. | System, devices, and method for on-body data and power transmission |
| KR102455039B1 (ko) * | 2016-03-18 | 2022-10-17 | 삼성디스플레이 주식회사 | 신축성 디스플레이 장치 |
| CN109310340A (zh) | 2016-04-19 | 2019-02-05 | Mc10股份有限公司 | 用于测量汗液的方法和系统 |
| ITUA20162943A1 (it) * | 2016-04-27 | 2017-10-27 | Pilegrowth Tech S R L | Metodo per la fabbricazione industriale di una struttura a semiconduttore a ridotto incurvamento. |
| WO2017209869A2 (en) * | 2016-05-31 | 2017-12-07 | E Ink Corporation | Stretchable electro-optic displays |
| US10002222B2 (en) * | 2016-07-14 | 2018-06-19 | Arm Limited | System and method for perforating redundant metal in self-aligned multiple patterning |
| US10447347B2 (en) | 2016-08-12 | 2019-10-15 | Mc10, Inc. | Wireless charger and high speed data off-loader |
| CN106229038B (zh) * | 2016-09-07 | 2017-10-24 | 东华大学 | 一种基于多级结构石墨烯的可拉伸透明导电弹性体的制备方法 |
| JP2018060932A (ja) * | 2016-10-06 | 2018-04-12 | ローム株式会社 | Ledパッケージ |
| US10845449B2 (en) | 2016-10-20 | 2020-11-24 | Quantum Diamond Technologies Inc. | Methods and apparatus for magnetic particle analysis using diamond magnetic imaging |
| JP2018078272A (ja) * | 2016-10-31 | 2018-05-17 | スリーエム イノベイティブ プロパティズ カンパニー | 三次元形状熱伝導性成形体、及びその製造方法 |
| CN106601933B (zh) * | 2016-12-12 | 2018-02-23 | 吉林大学 | 一种具有规则褶皱结构的可拉伸电子器件的制备方法 |
| JP7249281B2 (ja) | 2016-12-23 | 2023-03-30 | クアンタム ダイヤモンド テクノロジーズ インク. | 磁気式多ビーズアッセイのための方法および装置 |
| DE102017100053A1 (de) | 2017-01-03 | 2018-07-05 | Infineon Technologies Ag | Rahmenmontage nach Folienexpansion |
| US11127778B2 (en) | 2017-02-24 | 2021-09-21 | Flexucell Aps | Light emitting transducer |
| JP2018179501A (ja) * | 2017-04-03 | 2018-11-15 | 日本精工株式会社 | 近接覚センサ |
| CN110679049A (zh) * | 2017-04-12 | 2020-01-10 | 感应光子公司 | 超小型垂直腔表面发射激光器(vcsel)以及包括所述超小型垂直腔表面发射激光器的阵列 |
| US20180323239A1 (en) * | 2017-05-03 | 2018-11-08 | Innolux Corporation | Display device |
| CN107248518B (zh) * | 2017-05-26 | 2020-04-17 | 京东方科技集团股份有限公司 | 光电传感器及其制作方法、显示装置 |
| JP7190453B2 (ja) * | 2017-06-12 | 2022-12-15 | スリーエム イノベイティブ プロパティズ カンパニー | 伸縮性導体 |
| WO2019012345A1 (en) * | 2017-07-14 | 2019-01-17 | King Abdullah University Of Science And Technology | FLEXIBLE AND STRETCH IMAGER, METHOD FOR MANUFACTURING FLEXIBLE, STABLE IMAGER, AND METHOD FOR USING IMAGING DEVICE HAVING FLEXIBLE AND STRETCH IMAGER |
| EP3662293B1 (en) | 2017-07-31 | 2022-09-07 | Quantum Diamond Technologies Inc. | Sensor system comprising a sample cartridge including a flexible membrane for supporting a sample |
| EP3676009A4 (en) * | 2017-09-01 | 2021-06-16 | Miroculus Inc. | Digital microfluidics devices and methods of using them |
| CN107634054A (zh) * | 2017-09-18 | 2018-01-26 | 天津大学 | 柔性衬底上硅纳米膜转数字逻辑反相器及其制作方法 |
| US10205303B1 (en) * | 2017-10-18 | 2019-02-12 | Lumentum Operations Llc | Vertical-cavity surface-emitting laser thin wafer bowing control |
| WO2019093069A1 (ja) * | 2017-11-07 | 2019-05-16 | 大日本印刷株式会社 | 伸縮性回路基板および物品 |
| CN108009317A (zh) * | 2017-11-09 | 2018-05-08 | 武汉大学 | 一种复合材料的热导率研究仿真和建模方法 |
| WO2019096828A1 (en) * | 2017-11-15 | 2019-05-23 | Smith & Nephew Plc | Integrated sensor enabled wound monitoring and/or therapy dressings and systems |
| CN109859623B (zh) * | 2017-11-30 | 2021-05-18 | 云谷(固安)科技有限公司 | 阵列基板及其制备方法及显示屏 |
| KR101974575B1 (ko) * | 2017-12-01 | 2019-05-02 | 포항공과대학교 산학협력단 | 싱크로트론 엑스선을 이용한 초소형 다중 경사 구조체 제조 방법 |
| CN108417592A (zh) * | 2018-02-12 | 2018-08-17 | 中国科学院半导体研究所 | 红外成像器件及其制备方法、仿生红外球面相机 |
| KR102077306B1 (ko) * | 2018-02-14 | 2020-02-13 | 광운대학교 산학협력단 | 실시간 당 모니터링 센서 시스템 및 저온 용액 공정에 기반한 당센서의 제조 방법 |
| CN109346504B (zh) * | 2018-09-30 | 2021-06-29 | 云谷(固安)科技有限公司 | 柔性显示面板及显示装置 |
| CN109437091A (zh) * | 2018-10-23 | 2019-03-08 | 中山大学 | 一种在弹性衬底上制备微纳结构的方法 |
| CN111148364B (zh) * | 2018-11-05 | 2021-01-26 | 北京梦之墨科技有限公司 | 一种柔性可拉伸电路及其制作方法 |
| US12091357B2 (en) | 2021-08-05 | 2024-09-17 | Corning Incorporated | Dynamically bendable automotive interior display systems |
| KR20210102836A (ko) * | 2018-12-10 | 2021-08-20 | 코닝 인코포레이티드 | 동적으로 굽힘가능한 자동차 인테리어 디스플레이 시스템 |
| CN109671869B (zh) * | 2018-12-12 | 2020-06-16 | 武汉华星光电半导体显示技术有限公司 | 复合膜层的制作方法及显示器件 |
| CN109637366B (zh) * | 2018-12-28 | 2020-10-09 | 厦门天马微电子有限公司 | 治具和显示模组的弯折方法 |
| CN111724676B (zh) * | 2019-03-21 | 2022-09-02 | 昆山工研院新型平板显示技术中心有限公司 | 可拉伸导线及其制作方法和显示装置 |
| DE102019111964A1 (de) * | 2019-05-08 | 2020-11-12 | Danfoss Silicon Power Gmbh | Halbleitermodul mit einem ersten Substrat, einem zweiten Substrat und einen Abstandhalter, der die Substrate voneinander trennt |
| CN110393507B (zh) * | 2019-08-01 | 2020-12-25 | 清华大学 | 柔性可延展电子器件的结构设计及其制造方法 |
| CN110797148B (zh) * | 2019-10-08 | 2021-07-30 | 上海交通大学 | 适用于无绝缘线圈的超导带材、无绝缘线圈及其制备方法 |
| CN110683508B (zh) * | 2019-10-18 | 2023-05-23 | 北京元芯碳基集成电路研究院 | 一种碳纳米管平行阵列的制备方法 |
| CN110808295B (zh) * | 2019-11-11 | 2021-04-23 | 重庆中易智芯科技有限责任公司 | 一种三维电致伸缩收集电极的半导体探测器及其制备方法 |
| CN110697646A (zh) * | 2019-11-22 | 2020-01-17 | 上海幂方电子科技有限公司 | 一种电子皮肤及其制备方法 |
| US11062936B1 (en) | 2019-12-19 | 2021-07-13 | X Display Company Technology Limited | Transfer stamps with multiple separate pedestals |
| CN111063658B (zh) * | 2019-12-30 | 2020-09-29 | 清华大学 | 柔性可延展的电子器件的制造方法 |
| CA3167998A1 (en) * | 2020-02-12 | 2021-08-19 | Samuel MARCH | High performance perovskite solar cells, module design, and manufacturing processes therefor |
| GB2593864B (en) * | 2020-02-28 | 2023-01-04 | X Fab France Sas | Improved transfer printing for RF applications |
| CN112967971B (zh) * | 2020-05-27 | 2023-04-18 | 重庆康佳光电技术研究院有限公司 | 一种Micro-LED的转移基板及其制备方法 |
| KR102393781B1 (ko) * | 2020-07-07 | 2022-05-04 | 서울대학교산학협력단 | 유연 소자 |
| CN112133198B (zh) * | 2020-09-29 | 2022-04-22 | 厦门天马微电子有限公司 | 可拉伸显示面板及可拉伸显示装置 |
| CN112606585B (zh) * | 2020-12-02 | 2022-05-31 | 潍坊歌尔微电子有限公司 | 器件转印处理方法及微型麦克风防尘装置转印处理方法 |
| KR102591096B1 (ko) * | 2020-12-15 | 2023-10-18 | 연세대학교 산학협력단 | 인장 변형을 이용한 광 검출기 제조 방법, 이에 의해 제조되는 광 검출기, 및 그 제조 장치 |
| KR102412729B1 (ko) | 2021-01-18 | 2022-06-23 | 연세대학교 산학협력단 | 신축성 디스플레이 장치 |
| KR102553142B1 (ko) * | 2021-06-25 | 2023-07-06 | 경희대학교 산학협력단 | 감도 향상 구조를 갖는 전도성 고분자 복합재 기반 압저항 압력센서 및 그 제조방법 |
| KR102582188B1 (ko) * | 2021-07-22 | 2023-09-26 | 한국과학기술원 | 레이저 커팅된 플라스틱 기판을 활용한 신축 유기 발광 다이오드 및 그 제작 방법 |
| CN113542755B (zh) * | 2021-07-27 | 2022-06-21 | 展讯通信(上海)有限公司 | 二维楔形遮罩的产生方法及系统 |
| CN115915816A (zh) * | 2021-08-16 | 2023-04-04 | 华为技术有限公司 | 可拉伸装置及其制作方法 |
| US12217925B2 (en) | 2021-08-25 | 2025-02-04 | Beijing Boe Technology Development Co., Ltd. | Radio frequency micro-electro-mechanical switch and radio frequency device |
| CN114286513B (zh) * | 2021-11-30 | 2024-02-06 | 通元科技(惠州)有限公司 | 一种非对称预应力消除型led背板及其制作方法 |
| CN114355489B (zh) * | 2022-01-13 | 2023-05-16 | 西华大学 | 一种基于dmd数字光刻的曲面复眼透镜及其制备方法 |
| KR102711952B1 (ko) | 2022-01-20 | 2024-09-27 | 국립공주대학교 산학협력단 | 물결 모양 배선 및 이의 제조방법 |
| US20250102352A1 (en) * | 2022-01-21 | 2025-03-27 | Raymond DeCorby | Monolithic optical pressure sensors and transducers |
| US20250210388A1 (en) * | 2022-03-30 | 2025-06-26 | Council Of Scientific And Industrial Research | Method for fabricating silicon chip carriers using wet bulk micromachining for ir detector applications |
| KR102749617B1 (ko) * | 2022-07-08 | 2025-01-02 | 국립공주대학교 산학협력단 | 물결형 연신 배선 및 그 제조 방법 |
| CN116313797B (zh) * | 2023-03-24 | 2025-08-15 | 厦门市三安集成电路有限公司 | Hemt射频器件的制作方法及hemt射频器件 |
| IT202300009687A1 (it) * | 2023-05-15 | 2024-11-15 | Istituto Naz Fisica Nucleare | Contenitore per rivelatore di radiazioni e apparato rivelatore |
| CN119761127B (zh) * | 2024-12-20 | 2025-12-05 | 湖北江城实验室 | 半导体结构的设计方法、设计设备及计算机可读存储介质 |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5763864A (en) * | 1980-09-29 | 1982-04-17 | Messerschmitt Boelkow Blohm | Solar battery mechanism |
| US4766670A (en) * | 1987-02-02 | 1988-08-30 | International Business Machines Corporation | Full panel electronic packaging structure and method of making same |
| US5086785A (en) * | 1989-08-10 | 1992-02-11 | Abrams/Gentille Entertainment Inc. | Angular displacement sensors |
| US5475514A (en) | 1990-12-31 | 1995-12-12 | Kopin Corporation | Transferred single crystal arrayed devices including a light shield for projection displays |
| US5375397B1 (en) * | 1993-06-22 | 1998-11-10 | Robert J Ferrand | Curve-conforming sensor array pad and method of measuring saddle pressures on a horse |
| JPH08298334A (ja) * | 1995-04-26 | 1996-11-12 | Mitsubishi Electric Corp | 太陽電池板 |
| US6784023B2 (en) | 1996-05-20 | 2004-08-31 | Micron Technology, Inc. | Method of fabrication of stacked semiconductor devices |
| DE19637626A1 (de) * | 1996-09-16 | 1998-03-26 | Bosch Gmbh Robert | Flexible Leiterbahnverbindung |
| FR2786037B1 (fr) * | 1998-11-16 | 2001-01-26 | Alstom Technology | Barre de conduction electrique de type blinde pour poste electrique haute tension |
| US6150602A (en) * | 1999-05-25 | 2000-11-21 | Hughes Electronics Corporation | Large area solar cell extended life interconnect |
| EP1198852B1 (en) * | 1999-07-21 | 2009-12-02 | E Ink Corporation | Preferred methods for producing electrical circuit elements used to control an electronic display |
| JP2001352089A (ja) * | 2000-06-08 | 2001-12-21 | Showa Shell Sekiyu Kk | 熱膨張歪み防止型太陽電池モジュール |
| US6743982B2 (en) * | 2000-11-29 | 2004-06-01 | Xerox Corporation | Stretchable interconnects using stress gradient films |
| GB0029312D0 (en) * | 2000-12-01 | 2001-01-17 | Philips Corp Intellectual Pty | Flexible electronic device |
| KR20020093113A (ko) * | 2001-03-06 | 2002-12-12 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 디스플레이 디바이스 |
| US7273987B2 (en) * | 2002-03-21 | 2007-09-25 | General Electric Company | Flexible interconnect structures for electrical devices and light sources incorporating the same |
| JP3980918B2 (ja) * | 2002-03-28 | 2007-09-26 | 株式会社東芝 | アクティブマトリクス基板及びその製造方法、表示装置 |
| JP2003323741A (ja) | 2002-04-30 | 2003-11-14 | National Institute Of Advanced Industrial & Technology | 光学的メモリ |
| US7465678B2 (en) * | 2003-03-28 | 2008-12-16 | The Trustees Of Princeton University | Deformable organic devices |
| US7491892B2 (en) * | 2003-03-28 | 2009-02-17 | Princeton University | Stretchable and elastic interconnects |
| US20050227389A1 (en) * | 2004-04-13 | 2005-10-13 | Rabin Bhattacharya | Deformable organic devices |
| GB0323285D0 (en) * | 2003-10-04 | 2003-11-05 | Koninkl Philips Electronics Nv | Device and method of making a device having a patterned layer on a flexible substrate |
| WO2005098969A1 (ja) * | 2004-04-08 | 2005-10-20 | Sharp Kabushiki Kaisha | 太陽電池及び太陽電池モジュール |
| US7521292B2 (en) * | 2004-06-04 | 2009-04-21 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
| EP1759422B1 (en) * | 2004-06-04 | 2022-01-26 | The Board Of Trustees Of The University Of Illinois | Electrical device comprising printable semiconductor elements |
| US7629691B2 (en) * | 2004-06-16 | 2009-12-08 | Honeywell International Inc. | Conductor geometry for electronic circuits fabricated on flexible substrates |
| FR2875339B1 (fr) * | 2004-09-16 | 2006-12-08 | St Microelectronics Sa | Transistor mos a grille deformable |
| US20060132025A1 (en) * | 2004-12-22 | 2006-06-22 | Eastman Kodak Company | Flexible display designed for minimal mechanical strain |
| US20060160943A1 (en) * | 2005-01-18 | 2006-07-20 | Weir James P | Water-based flock adhesives for thermoplastic substrates |
| CN2779218Y (zh) * | 2005-02-01 | 2006-05-10 | 广德利德照明有限公司 | 一种管状led装饰灯的连接导线 |
| MY151572A (en) * | 2005-06-02 | 2014-06-13 | Univ Illinois | Printable semiconductor structures and related methods of making and assembling |
| JP7099160B2 (ja) | 2018-08-10 | 2022-07-12 | 住友電気工業株式会社 | 光ファイバの製造方法 |
| US11394720B2 (en) | 2019-12-30 | 2022-07-19 | Itron, Inc. | Time synchronization using trust aggregation |
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