MY146873A - Semiconductor device and method of manufacturing therof. - Google Patents

Semiconductor device and method of manufacturing therof.

Info

Publication number
MY146873A
MY146873A MYPI20051177A MYPI20051177A MY146873A MY 146873 A MY146873 A MY 146873A MY PI20051177 A MYPI20051177 A MY PI20051177A MY PI20051177 A MYPI20051177 A MY PI20051177A MY 146873 A MY146873 A MY 146873A
Authority
MY
Malaysia
Prior art keywords
semiconductor device
kgf
torque
mold
time interval
Prior art date
Application number
MYPI20051177A
Other languages
English (en)
Inventor
Yoshitsugu Morita
Junji Nakanishi
Katsutoshi Mine
Original Assignee
Dow Corning Toray Silicone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Toray Silicone filed Critical Dow Corning Toray Silicone
Publication of MY146873A publication Critical patent/MY146873A/en

Links

Classifications

    • H10W74/017—
    • H10W74/40—
    • H10W72/0198—
    • H10W74/01—
    • H10W74/476—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H10W72/5522—
    • H10W74/00—
    • H10W74/114—
    • H10W74/15—
    • H10W90/724—
    • H10W90/734—
    • H10W90/754—

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
MYPI20051177A 2004-03-19 2005-03-18 Semiconductor device and method of manufacturing therof. MY146873A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004079597A JP4903987B2 (ja) 2004-03-19 2004-03-19 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
MY146873A true MY146873A (en) 2012-10-15

Family

ID=34961509

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20051177A MY146873A (en) 2004-03-19 2005-03-18 Semiconductor device and method of manufacturing therof.

Country Status (8)

Country Link
US (1) US8262970B2 (enExample)
EP (1) EP1730775B1 (enExample)
JP (1) JP4903987B2 (enExample)
KR (1) KR101168861B1 (enExample)
CN (1) CN100539092C (enExample)
MY (1) MY146873A (enExample)
TW (1) TWI383429B (enExample)
WO (1) WO2005091361A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4931366B2 (ja) 2005-04-27 2012-05-16 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5207591B2 (ja) 2006-02-23 2013-06-12 東レ・ダウコーニング株式会社 半導体装置の製造方法および半導体装置
JP5285846B2 (ja) 2006-09-11 2013-09-11 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
CN102290170A (zh) * 2010-06-17 2011-12-21 台湾双羽电机股份有限公司 薄型电阻及其制造方法
US10629457B2 (en) * 2012-06-08 2020-04-21 Hitachi Chemical Company, Ltd. Method for manufacturing semiconductor device
US8997342B2 (en) * 2012-10-15 2015-04-07 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Method of fabrication, a multilayer electronic structure and structures in accordance with the method
JP2014082284A (ja) * 2012-10-15 2014-05-08 Dow Corning Toray Co Ltd 凸状硬化物及び基材を備える一体化物の製造方法
US9470395B2 (en) 2013-03-15 2016-10-18 Abl Ip Holding Llc Optic for a light source
US10807329B2 (en) 2013-05-10 2020-10-20 Abl Ip Holding Llc Silicone optics
WO2016036072A1 (ko) 2014-09-01 2016-03-10 한국생산기술연구원 레독스 플로우 전지용 바이폴라 플레이트 제조 방법
JP5994961B1 (ja) * 2015-03-05 2016-09-21 住友ベークライト株式会社 封止用樹脂組成物、車載用電子制御ユニットの製造方法、および車載用電子制御ユニット
KR102695706B1 (ko) * 2022-05-24 2024-08-16 레이저쎌 주식회사 진공챔버를 구비한 가압 방식의 레이저 리플로우 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214244A (ja) * 1988-06-30 1990-01-18 Toray Dow Corning Silicone Co Ltd 加熱硬化性オルガノポリシロキサン組成物
JP3516764B2 (ja) 1995-03-08 2004-04-05 アピックヤマダ株式会社 リリースフィルムを用いる樹脂モールド装置及び樹脂モールド方法
JPH1177733A (ja) 1997-09-01 1999-03-23 Apic Yamada Kk 樹脂モールド方法及び樹脂モールド装置
US6080605A (en) * 1998-10-06 2000-06-27 Tessera, Inc. Methods of encapsulating a semiconductor chip using a settable encapsulant
US6040366A (en) * 1998-02-27 2000-03-21 General Electric Company Liquid injection molding silicone elastomers having primerless adhesion
US6124407A (en) * 1998-10-28 2000-09-26 Dow Corning Corporation Silicone composition, method for the preparation thereof, and silicone elastomer
JP3494586B2 (ja) * 1999-03-26 2004-02-09 アピックヤマダ株式会社 樹脂封止装置及び樹脂封止方法
JP4646363B2 (ja) * 2000-06-29 2011-03-09 東レ・ダウコーニング株式会社 シリコーンゴム組成物
JP4947858B2 (ja) * 2001-08-21 2012-06-06 東レ・ダウコーニング株式会社 導電性液状シリコーンゴム組成物、導電性シリコーンゴム成形物およびその製造方法
JP4061361B2 (ja) * 2001-12-28 2008-03-19 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 付加反応型ポリオルガノシロキサン組成物
AU2003240017A1 (en) * 2002-05-31 2003-12-19 Dow Corning Toray Silicone Co., Ltd. Thermoconductive curable liquid polymer composition and semiconductor device produced with the use of this composition

Also Published As

Publication number Publication date
JP4903987B2 (ja) 2012-03-28
US20070273050A1 (en) 2007-11-29
JP2005268565A (ja) 2005-09-29
EP1730775A1 (en) 2006-12-13
CN1934699A (zh) 2007-03-21
US8262970B2 (en) 2012-09-11
TW200535957A (en) 2005-11-01
WO2005091361A1 (en) 2005-09-29
KR101168861B1 (ko) 2012-07-30
KR20060123643A (ko) 2006-12-01
EP1730775B1 (en) 2013-02-13
TWI383429B (zh) 2013-01-21
CN100539092C (zh) 2009-09-09

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