MY119887A - Throughput enhancement for single wafer reactor - Google Patents

Throughput enhancement for single wafer reactor

Info

Publication number
MY119887A
MY119887A MYPI20011989A MYPI20011989A MY119887A MY 119887 A MY119887 A MY 119887A MY PI20011989 A MYPI20011989 A MY PI20011989A MY PI20011989 A MYPI20011989 A MY PI20011989A MY 119887 A MY119887 A MY 119887A
Authority
MY
Malaysia
Prior art keywords
reactor
single wafer
wafer
wafer reactor
wafers
Prior art date
Application number
MYPI20011989A
Other languages
English (en)
Inventor
Michael J Tanguay
Original Assignee
Internat Rectifier Corportion
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Internat Rectifier Corportion filed Critical Internat Rectifier Corportion
Publication of MY119887A publication Critical patent/MY119887A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Warehouses Or Storage Devices (AREA)
MYPI20011989A 2000-04-29 2001-04-27 Throughput enhancement for single wafer reactor MY119887A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/563,784 US6508883B1 (en) 2000-04-29 2000-04-29 Throughput enhancement for single wafer reactor

Publications (1)

Publication Number Publication Date
MY119887A true MY119887A (en) 2005-07-29

Family

ID=24251897

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20011989A MY119887A (en) 2000-04-29 2001-04-27 Throughput enhancement for single wafer reactor

Country Status (16)

Country Link
US (1) US6508883B1 (ja)
EP (1) EP1339625B1 (ja)
JP (1) JP2003532302A (ja)
KR (1) KR100758567B1 (ja)
CN (1) CN1270946C (ja)
AT (1) ATE382023T1 (ja)
AU (1) AU2001255451A1 (ja)
CA (1) CA2407358A1 (ja)
CZ (1) CZ20023573A3 (ja)
DE (1) DE60132110T2 (ja)
IL (1) IL152500A0 (ja)
MX (1) MXPA02010669A (ja)
MY (1) MY119887A (ja)
NO (1) NO20025177L (ja)
TW (1) TW593741B (ja)
WO (1) WO2001083333A1 (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034100B2 (en) * 1999-03-11 2011-10-11 Endologix, Inc. Graft deployment system
US6645344B2 (en) * 2001-05-18 2003-11-11 Tokyo Electron Limited Universal backplane assembly and methods
US20030022498A1 (en) * 2001-07-27 2003-01-30 Jeong In Kwon CMP system and method for efficiently processing semiconductor wafers
US9002514B2 (en) 2007-11-30 2015-04-07 Novellus Systems, Inc. Wafer position correction with a dual, side-by-side wafer transfer robot
US8060252B2 (en) 2007-11-30 2011-11-15 Novellus Systems, Inc. High throughput method of in transit wafer position correction in system using multiple robots
US20090194026A1 (en) * 2008-01-31 2009-08-06 Burrows Brian H Processing system for fabricating compound nitride semiconductor devices
US9343273B2 (en) * 2008-09-25 2016-05-17 Seagate Technology Llc Substrate holders for uniform reactive sputtering
US8216379B2 (en) * 2009-04-23 2012-07-10 Applied Materials, Inc. Non-circular substrate holders
CN102117757A (zh) * 2011-01-17 2011-07-06 上海宏力半导体制造有限公司 具有自识别功能的晶圆罩和晶圆装卸台组件
JP5795172B2 (ja) * 2011-03-17 2015-10-14 株式会社アルバック 半導体製造装置
CN103132055B (zh) * 2011-12-01 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 基片上料组件、基片装卸载装置和pecvd设备
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
CN103451630B (zh) * 2012-05-29 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 基片装载装置和pecvd设备
CN104658956A (zh) * 2013-11-18 2015-05-27 北京北方微电子基地设备工艺研究中心有限责任公司 晶圆传输系统的支撑结构
JP6478878B2 (ja) * 2015-09-01 2019-03-06 東京エレクトロン株式会社 基板処理装置及び基板搬送方法並びに基板搬送プログラムを記憶したコンピュータ読み取り可能な記憶媒体
KR101904671B1 (ko) * 2017-09-29 2018-10-04 캐논 톡키 가부시키가이샤 기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법
US10796940B2 (en) 2018-11-05 2020-10-06 Lam Research Corporation Enhanced automatic wafer centering system and techniques for same
US11587815B2 (en) * 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099041A (en) * 1977-04-11 1978-07-04 Rca Corporation Susceptor for heating semiconductor substrates
US4566726A (en) * 1984-06-13 1986-01-28 At&T Technologies, Inc. Method and apparatus for handling semiconductor wafers
US4775281A (en) * 1986-12-02 1988-10-04 Teradyne, Inc. Apparatus and method for loading and unloading wafers
US4801241A (en) * 1984-03-09 1989-01-31 Tegal Corporation Modular article processing machine and method of article handling therein
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5442416A (en) * 1988-02-12 1995-08-15 Tokyo Electron Limited Resist processing method
US5626677A (en) * 1995-04-27 1997-05-06 Nec Corporation Atmospheric pressure CVD apparatus
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5855681A (en) * 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US6053980A (en) * 1996-09-26 2000-04-25 Kokusai Electric Co., Ltd. Substrate processing apparatus

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Publication number Priority date Publication date Assignee Title
JPH07321178A (ja) * 1994-05-24 1995-12-08 Hitachi Ltd 搬送装置およびその搬送装置を有するマルチチャンバ装置
US6299404B1 (en) * 1995-10-27 2001-10-09 Brooks Automation Inc. Substrate transport apparatus with double substrate holders
JPH09285982A (ja) * 1996-04-19 1997-11-04 Metsukusu:Kk 薄型ワーク搬送装置
JP2000021788A (ja) * 1998-06-26 2000-01-21 Shin Etsu Handotai Co Ltd 薄膜成長装置およびこれを用いた薄膜成長方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099041A (en) * 1977-04-11 1978-07-04 Rca Corporation Susceptor for heating semiconductor substrates
US4801241A (en) * 1984-03-09 1989-01-31 Tegal Corporation Modular article processing machine and method of article handling therein
US4566726A (en) * 1984-06-13 1986-01-28 At&T Technologies, Inc. Method and apparatus for handling semiconductor wafers
US4775281A (en) * 1986-12-02 1988-10-04 Teradyne, Inc. Apparatus and method for loading and unloading wafers
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5442416A (en) * 1988-02-12 1995-08-15 Tokyo Electron Limited Resist processing method
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5626677A (en) * 1995-04-27 1997-05-06 Nec Corporation Atmospheric pressure CVD apparatus
US6053980A (en) * 1996-09-26 2000-04-25 Kokusai Electric Co., Ltd. Substrate processing apparatus
US5855681A (en) * 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition

Also Published As

Publication number Publication date
EP1339625B1 (en) 2007-12-26
CZ20023573A3 (cs) 2003-11-12
KR100758567B1 (ko) 2007-09-14
ATE382023T1 (de) 2008-01-15
IL152500A0 (en) 2003-05-29
AU2001255451A1 (en) 2001-11-12
JP2003532302A (ja) 2003-10-28
DE60132110T2 (de) 2008-12-04
KR20020093998A (ko) 2002-12-16
EP1339625A4 (en) 2004-08-25
TW593741B (en) 2004-06-21
WO2001083333A1 (en) 2001-11-08
CN1270946C (zh) 2006-08-23
CA2407358A1 (en) 2001-11-08
DE60132110D1 (de) 2008-02-07
US6508883B1 (en) 2003-01-21
MXPA02010669A (es) 2003-10-06
CN1533347A (zh) 2004-09-29
NO20025177L (no) 2002-12-11
EP1339625A1 (en) 2003-09-03
NO20025177D0 (no) 2002-10-28

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