MY119523A - Chemical mechanical polishing process for layers of semiconductor or isolating materials - Google Patents

Chemical mechanical polishing process for layers of semiconductor or isolating materials

Info

Publication number
MY119523A
MY119523A MYPI98001512A MYPI9801512A MY119523A MY 119523 A MY119523 A MY 119523A MY PI98001512 A MYPI98001512 A MY PI98001512A MY PI9801512 A MYPI9801512 A MY PI9801512A MY 119523 A MY119523 A MY 119523A
Authority
MY
Malaysia
Prior art keywords
semiconductor
layer
mechanical polishing
chemical mechanical
polishing process
Prior art date
Application number
MYPI98001512A
Other languages
English (en)
Inventor
Eric Jacquinot
Maurice Rivoire
Catherine Euvrard
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Publication of MY119523A publication Critical patent/MY119523A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C01B33/142—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates
    • C01B33/143—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates of aqueous solutions of silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
MYPI98001512A 1997-04-07 1998-04-04 Chemical mechanical polishing process for layers of semiconductor or isolating materials MY119523A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9704207A FR2761629B1 (fr) 1997-04-07 1997-04-07 Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope

Publications (1)

Publication Number Publication Date
MY119523A true MY119523A (en) 2005-06-30

Family

ID=9505584

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI98001512A MY119523A (en) 1997-04-07 1998-04-04 Chemical mechanical polishing process for layers of semiconductor or isolating materials

Country Status (10)

Country Link
US (1) US6126518A (https=)
EP (2) EP1111023B1 (https=)
JP (1) JP4233629B2 (https=)
KR (1) KR100510951B1 (https=)
CN (1) CN1152416C (https=)
AT (2) ATE527211T1 (https=)
DE (1) DE69829329T2 (https=)
FR (1) FR2761629B1 (https=)
MY (1) MY119523A (https=)
SG (1) SG77633A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
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FR2781922B1 (fr) 1998-07-31 2001-11-23 Clariant France Sa Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
FR2792643B1 (fr) * 1999-04-22 2001-07-27 Clariant France Sa Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique
JP2002050594A (ja) * 2000-08-04 2002-02-15 Fuso Chemical Co Ltd コロイド状シリカスラリー
FR2819245B1 (fr) * 2001-01-09 2004-11-26 Clariant Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications
FR2819244B1 (fr) * 2001-01-09 2003-04-11 Clariant France Sa Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications
US6939203B2 (en) * 2002-04-18 2005-09-06 Asm Nutool, Inc. Fluid bearing slide assembly for workpiece polishing
DE60228685D1 (de) * 2002-05-16 2008-10-16 Micronit Microfluidics Bv Verfahren zur Herstellung eines mikrofluidischen Bauteiles
US20070286773A1 (en) * 2002-05-16 2007-12-13 Micronit Microfluidics B.V. Microfluidic Device
US7018678B2 (en) * 2002-06-03 2006-03-28 Shipley Company, L.L.C. Electronic device manufacture
KR101004525B1 (ko) * 2002-08-19 2010-12-31 호야 가부시키가이샤 마스크 블랭크용 글래스 기판 제조 방법, 마스크 블랭크제조방법, 전사 마스크 제조 방법, 반도체 디바이스제조방법, 마스크 블랭크용 글래스 기판, 마스크 블랭크,및 전사 마스크
FR2857895B1 (fr) * 2003-07-23 2007-01-26 Soitec Silicon On Insulator Procede de preparation de surface epiready sur films minces de sic
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
KR101349983B1 (ko) * 2006-09-13 2014-01-13 아사히 가라스 가부시키가이샤 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법
JP4411331B2 (ja) * 2007-03-19 2010-02-10 信越化学工業株式会社 磁気記録媒体用シリコン基板およびその製造方法
DE112008002628B4 (de) * 2007-09-28 2018-07-19 Nitta Haas Inc. Polierzusammensetzung
DE102011079694A1 (de) 2011-07-25 2013-01-31 Carl Zeiss Smt Gmbh Verfahren zum Polieren einer Schicht aus amorphem Silizium
CN107953225A (zh) * 2016-10-14 2018-04-24 上海新昇半导体科技有限公司 半导体晶圆的抛光方法
JP7528681B2 (ja) * 2020-09-29 2024-08-06 住友金属鉱山株式会社 ＳｉＣ多結晶基板の研磨方法
CN113045992A (zh) * 2021-03-23 2021-06-29 广东精坚科技有限公司 一种中性抛光液及其制备方法
CN114744065B (zh) * 2022-03-23 2024-06-14 中国电子科技集团公司第十一研究所 台面结构芯片的非接触式光刻方法

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US35420A (en) * 1862-05-27 And bdwaed joslin
US2744001A (en) * 1950-09-08 1956-05-01 Rare Earths Inc Polishing material and method of making same
US2680721A (en) * 1952-03-20 1954-06-08 Du Pont Process of increasing the size of unaggregated silica particles in an aqueous silicasuspension
NL213258A (https=) * 1955-12-22
US3208823A (en) * 1958-10-20 1965-09-28 Philadelphia Quartz Co Finely divided silica product and its method of preparation
US3170273A (en) * 1963-01-10 1965-02-23 Monsanto Co Process for polishing semiconductor materials
US3440174A (en) * 1965-04-26 1969-04-22 Nalco Chemical Co Method of making silica sols containing large particle size silica
US3867304A (en) * 1967-06-12 1975-02-18 Nalco Chemical Co Acidic stable salt-free silica sols
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
DE2629709C2 (de) * 1976-07-02 1982-06-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Herstellung eines metallionenfreien amorphen Siliciumdioxids und daraus hergestelltes Poliermittel zum mechanischen Polieren von Halbleiteroberflächen
US4435247A (en) * 1983-03-10 1984-03-06 International Business Machines Corporation Method for polishing titanium carbide
JPS61136909A (ja) * 1984-12-04 1986-06-24 Mitsubishi Chem Ind Ltd 無水ケイ酸の水分散液組成物
EP0363100A3 (en) * 1988-10-02 1990-05-23 Canon Kabushiki Kaisha Selective polishing method
USRE35420E (en) 1991-02-11 1997-01-07 Micron Technology, Inc. Method of increasing capacitance by surface roughening in semiconductor wafer processing
US5395801A (en) * 1993-09-29 1995-03-07 Micron Semiconductor, Inc. Chemical-mechanical polishing processes of planarizing insulating layers
JP2719113B2 (ja) * 1994-05-24 1998-02-25 信越半導体株式会社 単結晶シリコンウェーハの歪付け方法
KR960041316A (ko) * 1995-05-22 1996-12-19 고사이 아키오 연마용 입상체, 이의 제조방법 및 이의 용도
US5575706A (en) * 1996-01-11 1996-11-19 Taiwan Semiconductor Manufacturing Company Ltd. Chemical/mechanical planarization (CMP) apparatus and polish method
DE19623062C2 (de) * 1996-06-10 1998-07-02 Bayer Ag Verfahren zur Herstellung salzarmer Kieselsoldispersionen in niedrigsiedenden Alkoholen
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride

Also Published As

Publication number Publication date
JPH10308379A (ja) 1998-11-17
CN1208248A (zh) 1999-02-17
KR100510951B1 (ko) 2005-11-21
EP1111023A2 (fr) 2001-06-27
JP4233629B2 (ja) 2009-03-04
ATE527211T1 (de) 2011-10-15
FR2761629B1 (fr) 1999-06-18
DE69829329T2 (de) 2006-04-13
EP0878838B1 (fr) 2005-03-16
DE69829329D1 (de) 2005-04-21
ATE291277T1 (de) 2005-04-15
FR2761629A1 (fr) 1998-10-09
EP1111023A3 (fr) 2008-01-23
EP0878838A3 (fr) 1998-12-16
HK1018540A1 (en) 1999-12-24
KR19980081128A (ko) 1998-11-25
EP1111023B1 (fr) 2011-10-05
SG77633A1 (en) 2001-01-16
CN1152416C (zh) 2004-06-02
EP0878838A2 (fr) 1998-11-18
US6126518A (en) 2000-10-03

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