MY114349A - Etching solution for etching porous silicon, etching method using the etching solution and method of prepa- ring semiconductor member using the etching solution - Google Patents

Etching solution for etching porous silicon, etching method using the etching solution and method of prepa- ring semiconductor member using the etching solution

Info

Publication number
MY114349A
MY114349A MYPI92000239A MYPI19920239A MY114349A MY 114349 A MY114349 A MY 114349A MY PI92000239 A MYPI92000239 A MY PI92000239A MY PI19920239 A MYPI19920239 A MY PI19920239A MY 114349 A MY114349 A MY 114349A
Authority
MY
Malaysia
Prior art keywords
etching
etching solution
porous silicon
solution
prepa
Prior art date
Application number
MYPI92000239A
Other languages
English (en)
Inventor
Sato Nobuhiko
Yonehara Takao
Sakaguchi Kiyofumi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3148164A external-priority patent/JPH04346418A/ja
Priority claimed from JP3149297A external-priority patent/JPH04349621A/ja
Application filed by Canon Kk filed Critical Canon Kk
Publication of MY114349A publication Critical patent/MY114349A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/0203—Making porous regions on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
MYPI92000239A 1991-02-15 1992-02-14 Etching solution for etching porous silicon, etching method using the etching solution and method of prepa- ring semiconductor member using the etching solution MY114349A (en)

Applications Claiming Priority (49)

Application Number Priority Date Filing Date Title
JP4221291 1991-02-15
JP4221391 1991-02-15
JP5561391 1991-02-28
JP5560191 1991-02-28
JP5561291 1991-02-28
JP5560391 1991-02-28
JP5560491 1991-02-28
JP5561091 1991-02-28
JP5561491 1991-02-28
JP5560591 1991-02-28
JP5560991 1991-02-28
JP5560291 1991-02-28
JP5561191 1991-02-28
JP5560691 1991-02-28
JP5560891 1991-02-28
JP5560791 1991-02-28
JP8575591 1991-03-27
JP3148164A JPH04346418A (ja) 1991-05-24 1991-05-24 半導体基材の作製方法
JP14816391 1991-05-24
JP14816091 1991-05-24
JP14816191 1991-05-24
JP14930991 1991-05-27
JP3149297A JPH04349621A (ja) 1991-05-27 1991-05-27 半導体基材の作製方法
JP14930891 1991-05-27
JP14930691 1991-05-27
JP14930791 1991-05-27
JP14930191 1991-05-27
JP14930291 1991-05-27
JP14929991 1991-05-27
JP14929891 1991-05-27
JP14931191 1991-05-27
JP14931091 1991-05-27
JP14930091 1991-05-27
JP15098391 1991-05-28
JP15098091 1991-05-28
JP15099491 1991-05-28
JP15098491 1991-05-28
JP15098291 1991-05-28
JP15098191 1991-05-28
JP15099291 1991-05-28
JP15099091 1991-05-28
JP15098991 1991-05-28
JP15099391 1991-05-28
JP15099191 1991-05-28
JP15098591 1991-05-28
JP15224891 1991-05-29
JP15224991 1991-05-29
JP15225091 1991-05-29
JP15225191 1991-05-29

Publications (1)

Publication Number Publication Date
MY114349A true MY114349A (en) 2002-10-31

Family

ID=27586982

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI92000239A MY114349A (en) 1991-02-15 1992-02-14 Etching solution for etching porous silicon, etching method using the etching solution and method of prepa- ring semiconductor member using the etching solution

Country Status (8)

Country Link
US (1) US5767020A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (2) EP0499488B9 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR960007640B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1099905A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) ATE244931T1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA2061264C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
MY (1) MY114349A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SG (2) SG47089A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6171512B1 (en) * 1991-02-15 2001-01-09 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
CA2069038C (en) * 1991-05-22 1997-08-12 Kiyofumi Sakaguchi Method for preparing semiconductor member
TW211621B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1991-07-31 1993-08-21 Canon Kk
EP0534474B1 (en) * 1991-09-27 2002-01-16 Canon Kabushiki Kaisha Method of processing a silicon substrate
EP0536790B1 (en) * 1991-10-11 2004-03-03 Canon Kabushiki Kaisha Method for producing semiconductor articles
JP3112106B2 (ja) * 1991-10-11 2000-11-27 キヤノン株式会社 半導体基材の作製方法
JP3416163B2 (ja) * 1992-01-31 2003-06-16 キヤノン株式会社 半導体基板及びその作製方法
JP3237888B2 (ja) * 1992-01-31 2001-12-10 キヤノン株式会社 半導体基体及びその作製方法
TW330313B (en) * 1993-12-28 1998-04-21 Canon Kk A semiconductor substrate and process for producing same
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US6103598A (en) * 1995-07-13 2000-08-15 Canon Kabushiki Kaisha Process for producing semiconductor substrate
EP0757377B1 (en) * 1995-08-02 2003-04-09 Canon Kabushiki Kaisha Semiconductor substrate and fabrication method for the same
US6306729B1 (en) * 1997-12-26 2001-10-23 Canon Kabushiki Kaisha Semiconductor article and method of manufacturing the same
JP3218564B2 (ja) 1998-01-14 2001-10-15 キヤノン株式会社 多孔質領域の除去方法及び半導体基体の製造方法
TW405234B (en) * 1998-05-18 2000-09-11 United Microelectronics Corp Method for manufacturing a polysilicon fuse and the structure of the same
US6376859B1 (en) 1998-07-29 2002-04-23 Texas Instruments Incorporated Variable porosity porous silicon isolation
US6410436B2 (en) 1999-03-26 2002-06-25 Canon Kabushiki Kaisha Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
US6680900B1 (en) * 1999-06-04 2004-01-20 Ricoh Company, Ltd. Optical-pickup slider, manufacturing method thereof, probe and manufacturing method thereof, and probe array and manufacturing method thereof
DE19935446A1 (de) * 1999-07-28 2001-02-01 Merck Patent Gmbh Ätzlösung, Flußsäure enthaltend
US6653209B1 (en) 1999-09-30 2003-11-25 Canon Kabushiki Kaisha Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
US6790785B1 (en) 2000-09-15 2004-09-14 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch porous silicon formation method
AU2001297876A1 (en) 2000-11-27 2003-01-02 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch to produce porous group iii-v materials
US20030134486A1 (en) * 2002-01-16 2003-07-17 Zhongze Wang Semiconductor-on-insulator comprising integrated circuitry
JP2004228150A (ja) * 2003-01-20 2004-08-12 Canon Inc エッチング方法
US20050132332A1 (en) * 2003-12-12 2005-06-16 Abhay Sathe Multi-location coordinated test apparatus
US7244659B2 (en) 2005-03-10 2007-07-17 Micron Technology, Inc. Integrated circuits and methods of forming a field effect transistor
KR101272097B1 (ko) 2005-06-03 2013-06-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 집적회로 장치 및 그의 제조방법
US7557002B2 (en) * 2006-08-18 2009-07-07 Micron Technology, Inc. Methods of forming transistor devices
WO2008045301A1 (en) * 2006-10-05 2008-04-17 Hitachi Chemical Co., Ltd. Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same
US7989322B2 (en) * 2007-02-07 2011-08-02 Micron Technology, Inc. Methods of forming transistors
EP2104140A1 (en) * 2008-03-21 2009-09-23 Rise Technology S.r.l. Conductive microstructure obtained by converting porous silicon into porous metal
US8268640B2 (en) 2008-03-21 2012-09-18 Rise Technology S.R.L. Method for making microstructures by converting porous silicon into porous metal or ceramics
IT1391596B1 (it) * 2008-11-04 2012-01-11 Rise Technology S R L Microstrutture ottenute convertendo silicio poroso
US8387230B2 (en) * 2010-08-27 2013-03-05 Transducerworks, Llc Method of making an ultrasonic transducer system
CN103180983B (zh) 2010-10-22 2016-01-13 加州理工学院 用于低热导率和热电能量转换的材料的纳米网声子结构
US20130019918A1 (en) 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
WO2013109729A1 (en) 2012-01-17 2013-07-25 Silicium Energy, Inc. Systems and methods for forming thermoelectric devices
US9136134B2 (en) 2012-02-22 2015-09-15 Soitec Methods of providing thin layers of crystalline semiconductor material, and related structures and devices
WO2013149205A1 (en) 2012-03-29 2013-10-03 California Institute Of Technology Phononic structures and related devices and methods
KR20150086466A (ko) 2012-08-17 2015-07-28 실리시움 에너지, 인크. 열전 디바이스 형성 시스템 및 형성 방법
WO2014070795A1 (en) 2012-10-31 2014-05-08 Silicium Energy, Inc. Methods for forming thermoelectric elements
DE102014103303A1 (de) 2014-03-12 2015-10-01 Universität Konstanz Verfahren zum Herstellen von Solarzellen mit simultan rückgeätzten dotierten Bereichen
WO2015148554A1 (en) 2014-03-25 2015-10-01 Silicium Energy, Inc. Thermoelectric devices and systems
US10290796B2 (en) 2016-05-03 2019-05-14 Matrix Industries, Inc. Thermoelectric devices and systems
USD819627S1 (en) 2016-11-11 2018-06-05 Matrix Industries, Inc. Thermoelectric smartwatch
CN112221010B (zh) * 2020-11-09 2022-08-09 中国科学技术大学 一种采用金属辅助湿法刻蚀制备硅基微针的制备方法及其应用
US11587362B2 (en) 2020-12-16 2023-02-21 Lenovo (Singapore) Pte. Ltd. Techniques for determining sign language gesture partially shown in image(s)
CN115161032A (zh) * 2022-07-05 2022-10-11 北京师范大学 一种适用于单晶硅片的腐蚀溶液及方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1771305C3 (de) * 1968-05-03 1974-07-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Reinigen eines für die Halbleiterherstellung dienenden Behandlungsgefäßes aus Quarz
DE2438256A1 (de) * 1974-08-08 1976-02-19 Siemens Ag Verfahren zum herstellen einer monolithischen halbleiterverbundanordnung
US3962052A (en) * 1975-04-14 1976-06-08 International Business Machines Corporation Process for forming apertures in silicon bodies
FR2374396A1 (fr) * 1976-12-17 1978-07-13 Ibm Composition de decapage du silicium
US4171242A (en) * 1976-12-17 1979-10-16 International Business Machines Corporation Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass
NL8501773A (nl) * 1985-06-20 1987-01-16 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen.
JPH07120753B2 (ja) * 1986-09-18 1995-12-20 キヤノン株式会社 半導体メモリ装置及びその製造方法
JPH02206548A (ja) * 1989-02-07 1990-08-16 Nippon Unicar Co Ltd ラップフィルム
JPH02252265A (ja) * 1989-03-27 1990-10-11 Sony Corp 半導体基板の製法
JPH0676194B2 (ja) * 1989-09-30 1994-09-28 株式会社日立製作所 巻上機
GB8927709D0 (en) * 1989-12-07 1990-02-07 Secretary Of The State For Def Silicon quantum wires
EP0688048A3 (en) * 1990-08-03 1996-02-28 Canon Kk Semiconductor substrate with SOI structure
JP2734839B2 (ja) * 1991-10-09 1998-04-02 シャープ株式会社 アルミニウム用エッチング液およびエッチング方法並びにアルミニウムエッチング製品
EP0536790B1 (en) * 1991-10-11 2004-03-03 Canon Kabushiki Kaisha Method for producing semiconductor articles
JP3261685B2 (ja) * 1992-01-31 2002-03-04 キヤノン株式会社 半導体素子基体及びその作製方法
JP3250673B2 (ja) * 1992-01-31 2002-01-28 キヤノン株式会社 半導体素子基体とその作製方法

Also Published As

Publication number Publication date
EP1347505A2 (en) 2003-09-24
EP0499488B9 (en) 2004-01-28
CA2061264A1 (en) 1992-08-16
CA2061264C (en) 1999-11-16
KR960007640B1 (en) 1996-06-07
CN1099905A (zh) 1995-03-08
SG93197A1 (en) 2002-12-17
US5767020A (en) 1998-06-16
EP0499488B1 (en) 2003-07-09
EP1347505A3 (en) 2004-10-20
EP0499488A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1995-03-01
ATE244931T1 (de) 2003-07-15
SG47089A1 (en) 1998-03-20
EP0499488A2 (en) 1992-08-19

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