CA2061264C - Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution - Google Patents
Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solutionInfo
- Publication number
- CA2061264C CA2061264C CA002061264A CA2061264A CA2061264C CA 2061264 C CA2061264 C CA 2061264C CA 002061264 A CA002061264 A CA 002061264A CA 2061264 A CA2061264 A CA 2061264A CA 2061264 C CA2061264 C CA 2061264C
- Authority
- CA
- Canada
- Prior art keywords
- porous
- substrate
- layer
- etching
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005530 etching Methods 0.000 title claims abstract description 525
- 238000000034 method Methods 0.000 title claims abstract description 181
- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 229910021426 porous silicon Inorganic materials 0.000 title abstract description 514
- 239000000758 substrate Substances 0.000 claims abstract description 636
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 582
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 422
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 242
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 190
- 235000019441 ethanol Nutrition 0.000 claims description 128
- 238000002048 anodisation reaction Methods 0.000 claims description 95
- 229910052710 silicon Inorganic materials 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- 239000011521 glass Substances 0.000 claims description 29
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 23
- 239000007788 liquid Substances 0.000 claims description 18
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 14
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 9
- 239000007791 liquid phase Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 4
- 239000010453 quartz Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 abstract description 25
- 239000010410 layer Substances 0.000 description 608
- 239000000243 solution Substances 0.000 description 432
- 239000013078 crystal Substances 0.000 description 112
- 239000000203 mixture Substances 0.000 description 107
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 106
- 239000012528 membrane Substances 0.000 description 55
- 229910052581 Si3N4 Inorganic materials 0.000 description 54
- 238000012360 testing method Methods 0.000 description 53
- 230000007547 defect Effects 0.000 description 51
- 239000012298 atmosphere Substances 0.000 description 50
- 239000001301 oxygen Substances 0.000 description 49
- 229910052760 oxygen Inorganic materials 0.000 description 49
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 48
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 45
- 238000000151 deposition Methods 0.000 description 43
- 230000015572 biosynthetic process Effects 0.000 description 42
- 230000008021 deposition Effects 0.000 description 41
- 239000000463 material Substances 0.000 description 37
- 238000013019 agitation Methods 0.000 description 36
- 230000000694 effects Effects 0.000 description 31
- 239000007789 gas Substances 0.000 description 31
- 238000010438 heat treatment Methods 0.000 description 31
- 230000008569 process Effects 0.000 description 31
- 239000007858 starting material Substances 0.000 description 31
- 150000004767 nitrides Chemical class 0.000 description 26
- 150000002500 ions Chemical class 0.000 description 25
- 238000001020 plasma etching Methods 0.000 description 25
- 238000007743 anodising Methods 0.000 description 23
- 238000001451 molecular beam epitaxy Methods 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 22
- 230000009467 reduction Effects 0.000 description 21
- 238000003486 chemical etching Methods 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 20
- 238000000576 coating method Methods 0.000 description 20
- 239000012535 impurity Substances 0.000 description 20
- 238000005498 polishing Methods 0.000 description 19
- 238000003756 stirring Methods 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 17
- 239000010408 film Substances 0.000 description 16
- 230000008859 change Effects 0.000 description 15
- 238000004452 microanalysis Methods 0.000 description 15
- 239000011259 mixed solution Substances 0.000 description 15
- 238000007254 oxidation reaction Methods 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000005350 fused silica glass Substances 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 12
- 230000036632 reaction speed Effects 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 10
- 238000003631 wet chemical etching Methods 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 239000007795 chemical reaction product Substances 0.000 description 8
- 238000002513 implantation Methods 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 6
- -1 oxygen ions Chemical class 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 230000002708 enhancing effect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- ZRPZPNYZFSJUPA-UHFFFAOYSA-N ARS-1620 Chemical compound Oc1cccc(F)c1-c1c(Cl)cc2c(ncnc2c1F)N1CCN(CC1)C(=O)C=C ZRPZPNYZFSJUPA-UHFFFAOYSA-N 0.000 description 2
- 229910004016 SiF2 Inorganic materials 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 2
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- MGNHOGAVECORPT-UHFFFAOYSA-N difluorosilicon Chemical compound F[Si]F MGNHOGAVECORPT-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 241001502050 Acis Species 0.000 description 1
- 229910003638 H2SiF6 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- LMRFGCUCLQUNCZ-UHFFFAOYSA-N hydrogen peroxide hydrofluoride Chemical compound F.OO LMRFGCUCLQUNCZ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/0203—Making porous regions on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
Applications Claiming Priority (98)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03-042213 | 1991-02-15 | ||
| JP4221391 | 1991-02-15 | ||
| JP03-042212 | 1991-02-15 | ||
| JP4221291 | 1991-02-15 | ||
| JP5560991 | 1991-02-28 | ||
| JP5561391 | 1991-02-28 | ||
| JP5560791 | 1991-02-28 | ||
| JP5560191 | 1991-02-28 | ||
| JP03-055610 | 1991-02-28 | ||
| JP03-055602 | 1991-02-28 | ||
| JP03-055607 | 1991-02-28 | ||
| JP03-055614 | 1991-02-28 | ||
| JP5561191 | 1991-02-28 | ||
| JP5560691 | 1991-02-28 | ||
| JP03-055613 | 1991-02-28 | ||
| JP5561491 | 1991-02-28 | ||
| JP03-055612 | 1991-02-28 | ||
| JP03-055603 | 1991-02-28 | ||
| JP03-055608 | 1991-02-28 | ||
| JP03-055604 | 1991-02-28 | ||
| JP03-055601 | 1991-02-28 | ||
| JP5561091 | 1991-02-28 | ||
| JP5561291 | 1991-02-28 | ||
| JP5560291 | 1991-02-28 | ||
| JP5560491 | 1991-02-28 | ||
| JP5560891 | 1991-02-28 | ||
| JP03-055606 | 1991-02-28 | ||
| JP03-055609 | 1991-02-28 | ||
| JP03-055605 | 1991-02-28 | ||
| JP5560391 | 1991-02-28 | ||
| JP03-055611 | 1991-02-28 | ||
| JP5560591 | 1991-02-28 | ||
| JP8575591 | 1991-03-27 | ||
| JP03-085755 | 1991-03-27 | ||
| JP03-148163 | 1991-05-24 | ||
| JP3148164A JPH04346418A (ja) | 1991-05-24 | 1991-05-24 | 半導体基材の作製方法 |
| JP14816391 | 1991-05-24 | ||
| JP03-148164 | 1991-05-24 | ||
| JP14816191 | 1991-05-24 | ||
| JP03-148161 | 1991-05-24 | ||
| JP14816091 | 1991-05-24 | ||
| JP03-148160 | 1991-05-24 | ||
| JP03-149299 | 1991-05-27 | ||
| JP14931191 | 1991-05-27 | ||
| JP14930191 | 1991-05-27 | ||
| JP14930891 | 1991-05-27 | ||
| JP03-149298 | 1991-05-27 | ||
| JP14929991 | 1991-05-27 | ||
| JP03-149302 | 1991-05-27 | ||
| JP14929891 | 1991-05-27 | ||
| JP14930791 | 1991-05-27 | ||
| JP03-149301 | 1991-05-27 | ||
| JP14931091 | 1991-05-27 | ||
| JP03-149300 | 1991-05-27 | ||
| JP14930691 | 1991-05-27 | ||
| JP3149297A JPH04349621A (ja) | 1991-05-27 | 1991-05-27 | 半導体基材の作製方法 |
| JP14930291 | 1991-05-27 | ||
| JP14930091 | 1991-05-27 | ||
| JP14930991 | 1991-05-27 | ||
| JP03-149297 | 1991-05-27 | ||
| JP03-150982 | 1991-05-28 | ||
| JP15098591 | 1991-05-28 | ||
| JP03-150994 | 1991-05-28 | ||
| JP03-150981 | 1991-05-28 | ||
| JP15098291 | 1991-05-28 | ||
| JP03-150992 | 1991-05-28 | ||
| JP03-150983 | 1991-05-28 | ||
| JP15099191 | 1991-05-28 | ||
| JP15098091 | 1991-05-28 | ||
| JP15099491 | 1991-05-28 | ||
| JP15099091 | 1991-05-28 | ||
| JP15099391 | 1991-05-28 | ||
| JP03-150989 | 1991-05-28 | ||
| JP03-150980 | 1991-05-28 | ||
| JP03-150991 | 1991-05-28 | ||
| JP03-150990 | 1991-05-28 | ||
| JP03-150985 | 1991-05-28 | ||
| JP15098191 | 1991-05-28 | ||
| JP15099291 | 1991-05-28 | ||
| JP15098391 | 1991-05-28 | ||
| JP03-150984 | 1991-05-28 | ||
| JP15098491 | 1991-05-28 | ||
| JP15098991 | 1991-05-28 | ||
| JP3-149310 | 1991-05-29 | ||
| JP3-149308 | 1991-05-29 | ||
| JP3-152250 | 1991-05-29 | ||
| JP3-152251 | 1991-05-29 | ||
| JP15225091 | 1991-05-29 | ||
| JP15224891 | 1991-05-29 | ||
| JP3-149311 | 1991-05-29 | ||
| JP03-152249 | 1991-05-29 | ||
| JP3-150993 | 1991-05-29 | ||
| JP3-149306 | 1991-05-29 | ||
| JP3-149307 | 1991-05-29 | ||
| JP3-149309 | 1991-05-29 | ||
| JP03-152248 | 1991-05-29 | ||
| JP15224991 | 1991-05-29 | ||
| JP15225191 | 1991-05-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2061264A1 CA2061264A1 (en) | 1992-08-16 |
| CA2061264C true CA2061264C (en) | 1999-11-16 |
Family
ID=27586982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002061264A Expired - Fee Related CA2061264C (en) | 1991-02-15 | 1992-02-14 | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
Country Status (8)
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6171512B1 (en) * | 1991-02-15 | 2001-01-09 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
| CA2069038C (en) * | 1991-05-22 | 1997-08-12 | Kiyofumi Sakaguchi | Method for preparing semiconductor member |
| TW211621B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1991-07-31 | 1993-08-21 | Canon Kk | |
| EP0534474B1 (en) * | 1991-09-27 | 2002-01-16 | Canon Kabushiki Kaisha | Method of processing a silicon substrate |
| EP0536790B1 (en) * | 1991-10-11 | 2004-03-03 | Canon Kabushiki Kaisha | Method for producing semiconductor articles |
| JP3112106B2 (ja) * | 1991-10-11 | 2000-11-27 | キヤノン株式会社 | 半導体基材の作製方法 |
| JP3416163B2 (ja) * | 1992-01-31 | 2003-06-16 | キヤノン株式会社 | 半導体基板及びその作製方法 |
| JP3237888B2 (ja) * | 1992-01-31 | 2001-12-10 | キヤノン株式会社 | 半導体基体及びその作製方法 |
| TW330313B (en) * | 1993-12-28 | 1998-04-21 | Canon Kk | A semiconductor substrate and process for producing same |
| US7148119B1 (en) | 1994-03-10 | 2006-12-12 | Canon Kabushiki Kaisha | Process for production of semiconductor substrate |
| US6103598A (en) * | 1995-07-13 | 2000-08-15 | Canon Kabushiki Kaisha | Process for producing semiconductor substrate |
| EP0757377B1 (en) * | 1995-08-02 | 2003-04-09 | Canon Kabushiki Kaisha | Semiconductor substrate and fabrication method for the same |
| US6306729B1 (en) * | 1997-12-26 | 2001-10-23 | Canon Kabushiki Kaisha | Semiconductor article and method of manufacturing the same |
| JP3218564B2 (ja) | 1998-01-14 | 2001-10-15 | キヤノン株式会社 | 多孔質領域の除去方法及び半導体基体の製造方法 |
| TW405234B (en) * | 1998-05-18 | 2000-09-11 | United Microelectronics Corp | Method for manufacturing a polysilicon fuse and the structure of the same |
| US6376859B1 (en) | 1998-07-29 | 2002-04-23 | Texas Instruments Incorporated | Variable porosity porous silicon isolation |
| US6410436B2 (en) | 1999-03-26 | 2002-06-25 | Canon Kabushiki Kaisha | Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate |
| US6680900B1 (en) * | 1999-06-04 | 2004-01-20 | Ricoh Company, Ltd. | Optical-pickup slider, manufacturing method thereof, probe and manufacturing method thereof, and probe array and manufacturing method thereof |
| DE19935446A1 (de) * | 1999-07-28 | 2001-02-01 | Merck Patent Gmbh | Ätzlösung, Flußsäure enthaltend |
| US6653209B1 (en) | 1999-09-30 | 2003-11-25 | Canon Kabushiki Kaisha | Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device |
| US6790785B1 (en) | 2000-09-15 | 2004-09-14 | The Board Of Trustees Of The University Of Illinois | Metal-assisted chemical etch porous silicon formation method |
| AU2001297876A1 (en) | 2000-11-27 | 2003-01-02 | The Board Of Trustees Of The University Of Illinois | Metal-assisted chemical etch to produce porous group iii-v materials |
| US20030134486A1 (en) * | 2002-01-16 | 2003-07-17 | Zhongze Wang | Semiconductor-on-insulator comprising integrated circuitry |
| JP2004228150A (ja) * | 2003-01-20 | 2004-08-12 | Canon Inc | エッチング方法 |
| US20050132332A1 (en) * | 2003-12-12 | 2005-06-16 | Abhay Sathe | Multi-location coordinated test apparatus |
| US7244659B2 (en) | 2005-03-10 | 2007-07-17 | Micron Technology, Inc. | Integrated circuits and methods of forming a field effect transistor |
| KR101272097B1 (ko) | 2005-06-03 | 2013-06-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 집적회로 장치 및 그의 제조방법 |
| US7557002B2 (en) * | 2006-08-18 | 2009-07-07 | Micron Technology, Inc. | Methods of forming transistor devices |
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| DE1771305C3 (de) * | 1968-05-03 | 1974-07-04 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Reinigen eines für die Halbleiterherstellung dienenden Behandlungsgefäßes aus Quarz |
| DE2438256A1 (de) * | 1974-08-08 | 1976-02-19 | Siemens Ag | Verfahren zum herstellen einer monolithischen halbleiterverbundanordnung |
| US3962052A (en) * | 1975-04-14 | 1976-06-08 | International Business Machines Corporation | Process for forming apertures in silicon bodies |
| FR2374396A1 (fr) * | 1976-12-17 | 1978-07-13 | Ibm | Composition de decapage du silicium |
| US4171242A (en) * | 1976-12-17 | 1979-10-16 | International Business Machines Corporation | Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass |
| NL8501773A (nl) * | 1985-06-20 | 1987-01-16 | Philips Nv | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen. |
| JPH07120753B2 (ja) * | 1986-09-18 | 1995-12-20 | キヤノン株式会社 | 半導体メモリ装置及びその製造方法 |
| JPH02206548A (ja) * | 1989-02-07 | 1990-08-16 | Nippon Unicar Co Ltd | ラップフィルム |
| JPH02252265A (ja) * | 1989-03-27 | 1990-10-11 | Sony Corp | 半導体基板の製法 |
| JPH0676194B2 (ja) * | 1989-09-30 | 1994-09-28 | 株式会社日立製作所 | 巻上機 |
| GB8927709D0 (en) * | 1989-12-07 | 1990-02-07 | Secretary Of The State For Def | Silicon quantum wires |
| EP0688048A3 (en) * | 1990-08-03 | 1996-02-28 | Canon Kk | Semiconductor substrate with SOI structure |
| JP2734839B2 (ja) * | 1991-10-09 | 1998-04-02 | シャープ株式会社 | アルミニウム用エッチング液およびエッチング方法並びにアルミニウムエッチング製品 |
| EP0536790B1 (en) * | 1991-10-11 | 2004-03-03 | Canon Kabushiki Kaisha | Method for producing semiconductor articles |
| JP3261685B2 (ja) * | 1992-01-31 | 2002-03-04 | キヤノン株式会社 | 半導体素子基体及びその作製方法 |
| JP3250673B2 (ja) * | 1992-01-31 | 2002-01-28 | キヤノン株式会社 | 半導体素子基体とその作製方法 |
-
1992
- 1992-02-14 SG SG1996006372A patent/SG47089A1/en unknown
- 1992-02-14 MY MYPI92000239A patent/MY114349A/en unknown
- 1992-02-14 SG SG9901639A patent/SG93197A1/en unknown
- 1992-02-14 EP EP92301252A patent/EP0499488B9/en not_active Expired - Lifetime
- 1992-02-14 CA CA002061264A patent/CA2061264C/en not_active Expired - Fee Related
- 1992-02-14 US US07/835,381 patent/US5767020A/en not_active Expired - Lifetime
- 1992-02-14 AT AT92301252T patent/ATE244931T1/de not_active IP Right Cessation
- 1992-02-14 EP EP03076425A patent/EP1347505A3/en not_active Withdrawn
- 1992-02-15 KR KR92002263A patent/KR960007640B1/ko not_active Expired - Fee Related
-
1993
- 1993-10-08 CN CN93118894A patent/CN1099905A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1347505A2 (en) | 2003-09-24 |
| EP0499488B9 (en) | 2004-01-28 |
| CA2061264A1 (en) | 1992-08-16 |
| KR960007640B1 (en) | 1996-06-07 |
| CN1099905A (zh) | 1995-03-08 |
| MY114349A (en) | 2002-10-31 |
| SG93197A1 (en) | 2002-12-17 |
| US5767020A (en) | 1998-06-16 |
| EP0499488B1 (en) | 2003-07-09 |
| EP1347505A3 (en) | 2004-10-20 |
| EP0499488A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1995-03-01 |
| ATE244931T1 (de) | 2003-07-15 |
| SG47089A1 (en) | 1998-03-20 |
| EP0499488A2 (en) | 1992-08-19 |
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