MX9101488A - Configuracion mejorada de fuente de plasma para implantacion de iones - Google Patents

Configuracion mejorada de fuente de plasma para implantacion de iones

Info

Publication number
MX9101488A
MX9101488A MX9101488A MX9101488A MX9101488A MX 9101488 A MX9101488 A MX 9101488A MX 9101488 A MX9101488 A MX 9101488A MX 9101488 A MX9101488 A MX 9101488A MX 9101488 A MX9101488 A MX 9101488A
Authority
MX
Mexico
Prior art keywords
plasma source
source configuration
improved plasma
ion implementation
ion
Prior art date
Application number
MX9101488A
Other languages
English (en)
Inventor
Jesse N Matossian
Man M Goebel
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of MX9101488A publication Critical patent/MX9101488A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
MX9101488A 1990-10-10 1991-10-09 Configuracion mejorada de fuente de plasma para implantacion de iones MX9101488A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59512390A 1990-10-10 1990-10-10

Publications (1)

Publication Number Publication Date
MX9101488A true MX9101488A (es) 1992-06-05

Family

ID=24381836

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9101488A MX9101488A (es) 1990-10-10 1991-10-09 Configuracion mejorada de fuente de plasma para implantacion de iones

Country Status (6)

Country Link
EP (1) EP0480688B1 (es)
JP (1) JP2512649B2 (es)
KR (1) KR950011847B1 (es)
CA (1) CA2052080C (es)
DE (1) DE69112166T2 (es)
MX (1) MX9101488A (es)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5330800A (en) * 1992-11-04 1994-07-19 Hughes Aircraft Company High impedance plasma ion implantation method and apparatus
US5289010A (en) * 1992-12-08 1994-02-22 Wisconsin Alumni Research Foundation Ion purification for plasma ion implantation
DE19538903A1 (de) * 1995-10-19 1997-04-24 Rossendorf Forschzent Verfahren zur Implantation von Ionen in leitende bzw. halbleitende Werkstücke mittels Plasmaimmersionsionenimplantation (P III) und Implantationskammer zur Durchführung des Verfahrens
US6101972A (en) * 1998-05-13 2000-08-15 Intevac, Inc. Plasma processing system and method
US6368678B1 (en) * 1998-05-13 2002-04-09 Terry Bluck Plasma processing system and method
US6182604B1 (en) * 1999-10-27 2001-02-06 Varian Semiconductor Equipment Associates, Inc. Hollow cathode for plasma doping system
US6633132B2 (en) 2001-01-23 2003-10-14 Wafermasters Inc. Plasma gereration apparatus and method
KR100416715B1 (ko) * 2001-02-27 2004-01-31 한국과학기술연구원 펄스 플라즈마를 이용한 이온 주입 방법 및 그 시스템
JP3611324B2 (ja) * 2002-06-03 2005-01-19 信越化学工業株式会社 マグネトロンプラズマ用磁場発生装置
KR100509804B1 (ko) * 2003-02-04 2005-08-24 동부아남반도체 주식회사 이온주입장치의 앤드스테이션
US9771648B2 (en) 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US9123508B2 (en) 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
US7095179B2 (en) 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
JP5237820B2 (ja) * 2006-11-15 2013-07-17 パナソニック株式会社 プラズマドーピング方法
US8142607B2 (en) * 2008-08-28 2012-03-27 Varian Semiconductor Equipment Associates, Inc. High density helicon plasma source for wide ribbon ion beam generation
US7999479B2 (en) * 2009-04-16 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control
FR2998707B1 (fr) 2012-11-27 2016-01-01 Ion Beam Services Implanteur ionique pourvu d'une pluralite de corps de source plasma
DE102012024340A1 (de) * 2012-12-13 2014-06-18 Oerlikon Trading Ag, Trübbach Plasmaquelle
CN104411082B (zh) * 2014-11-12 2017-12-19 中国科学院深圳先进技术研究院 等离子源系统和等离子生成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4800281A (en) * 1984-09-24 1989-01-24 Hughes Aircraft Company Compact penning-discharge plasma source
US4776923A (en) * 1987-01-20 1988-10-11 Machine Technology, Inc. Plasma product treatment apparatus and methods and gas transport systems for use therein
US4764394A (en) * 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
JPS63239948A (ja) * 1987-03-27 1988-10-05 Nec Corp ドライエツチング装置
JPH0211762A (ja) * 1988-06-28 1990-01-16 Masanobu Nunogaki 表面加工容器中高エネルギーイオン注入法
JPH07101685B2 (ja) * 1989-01-26 1995-11-01 富士通株式会社 マイクロ波プラズマ処理装置

Also Published As

Publication number Publication date
CA2052080A1 (en) 1992-04-11
EP0480688A2 (en) 1992-04-15
EP0480688B1 (en) 1995-08-16
JP2512649B2 (ja) 1996-07-03
KR950011847B1 (ko) 1995-10-11
EP0480688A3 (en) 1992-07-01
DE69112166D1 (de) 1995-09-21
CA2052080C (en) 1997-01-14
KR920009271A (ko) 1992-05-28
DE69112166T2 (de) 1996-01-04
JPH04264346A (ja) 1992-09-21

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