MX356580B - Sensor de fluido de amplio intervalo dinámico basado en una plataforma de nanoalambres. - Google Patents

Sensor de fluido de amplio intervalo dinámico basado en una plataforma de nanoalambres.

Info

Publication number
MX356580B
MX356580B MX2015004671A MX2015004671A MX356580B MX 356580 B MX356580 B MX 356580B MX 2015004671 A MX2015004671 A MX 2015004671A MX 2015004671 A MX2015004671 A MX 2015004671A MX 356580 B MX356580 B MX 356580B
Authority
MX
Mexico
Prior art keywords
nanowires
dynamic range
sensor based
wide dynamic
fluid sensor
Prior art date
Application number
MX2015004671A
Other languages
English (en)
Spanish (es)
Other versions
MX2015004671A (es
Inventor
Hendrik Klootwijk Johan
Mulder Marcel
Original Assignee
Koninklijke Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Nv filed Critical Koninklijke Philips Nv
Publication of MX2015004671A publication Critical patent/MX2015004671A/es
Publication of MX356580B publication Critical patent/MX356580B/es

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004Gaseous mixtures, e.g. polluted air
    • G01N33/0009General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0031General constructional details of gas analysers, e.g. portable test equipment concerning the detector comprising two or more sensors, e.g. a sensor array
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • H10D62/118Nanostructure semiconductor bodies
    • H10D62/119Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Molecular Biology (AREA)
  • Nanotechnology (AREA)
  • Combustion & Propulsion (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
MX2015004671A 2012-10-16 2013-10-07 Sensor de fluido de amplio intervalo dinámico basado en una plataforma de nanoalambres. MX356580B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261714418P 2012-10-16 2012-10-16
PCT/IB2013/059160 WO2014060894A2 (en) 2012-10-16 2013-10-07 Wide dynamic range fluid sensor based on nanowire platform

Publications (2)

Publication Number Publication Date
MX2015004671A MX2015004671A (es) 2015-08-07
MX356580B true MX356580B (es) 2018-06-05

Family

ID=49917673

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2015004671A MX356580B (es) 2012-10-16 2013-10-07 Sensor de fluido de amplio intervalo dinámico basado en una plataforma de nanoalambres.

Country Status (8)

Country Link
US (1) US10126263B2 (cg-RX-API-DMAC7.html)
EP (1) EP2909617A2 (cg-RX-API-DMAC7.html)
JP (1) JP6533465B2 (cg-RX-API-DMAC7.html)
CN (1) CN104737009B (cg-RX-API-DMAC7.html)
BR (1) BR112015008202B1 (cg-RX-API-DMAC7.html)
MX (1) MX356580B (cg-RX-API-DMAC7.html)
RU (1) RU2638130C2 (cg-RX-API-DMAC7.html)
WO (1) WO2014060894A2 (cg-RX-API-DMAC7.html)

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JP6063603B2 (ja) * 2013-03-14 2017-01-18 ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. 物質を検出するための装置及び該装置を製造する方法
KR101866006B1 (ko) * 2013-03-14 2018-06-08 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 물질을 검출하기 위한 장치, 및 그러한 장치를 제조하는 방법
JP6687862B2 (ja) * 2015-06-30 2020-04-28 富士通株式会社 ガスセンサ及びその使用方法
BR112018005093B8 (pt) 2015-09-16 2023-04-18 Systems & Software Entpr Llc Melhoramento em mecanismos de detecção de líquidos para cartões de circuito
CN105424780B (zh) * 2015-11-26 2018-06-22 深圳代尔夫特电子科技有限公司 一种氮化镓传感器、制备方法和多传感器系统
WO2017104130A1 (ja) 2015-12-16 2017-06-22 パナソニックIpマネジメント株式会社 ガスセンサ及びガスセンシングシステム
FR3046243B1 (fr) * 2015-12-24 2017-12-22 Commissariat Energie Atomique Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur
CN106290525B (zh) * 2016-08-04 2018-08-28 北京大学 一种带正面栅极调控的纳米线生物传感器件及其制备方法
JP2019190829A (ja) * 2016-08-31 2019-10-31 シャープ株式会社 ナノファイバーセンサ
JP6880930B2 (ja) * 2017-03-30 2021-06-02 セイコーエプソン株式会社 センサー
WO2019107165A1 (ja) * 2017-11-30 2019-06-06 東レ株式会社 回路、検知器、無線通信デバイス、水分検知システム、おむつ、報知システムおよび回路の製造方法
US10788375B2 (en) * 2017-12-07 2020-09-29 Tower Semiconductor Ltd. Apparatus, system and method of a temperature sensor
EP3540422B1 (en) * 2018-03-14 2024-01-03 Sciosense B.V. Monolithic gas sensor arrangement, manufacturing method and measurement method
JP7467455B2 (ja) * 2018-11-20 2024-04-15 ナショナル リサーチ カウンシル オブ カナダ センサー・プラットフォーム
JP2022511068A (ja) * 2018-12-05 2022-01-28 フェムトドクス 差分センサの測定方法及び装置
EP3997452A4 (en) * 2019-07-12 2023-08-16 Qulab Medical Ltd. ELECTROCHEMICAL FET SENSOR
RU2749070C1 (ru) * 2020-09-17 2021-06-03 Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника") Способ формирования активных структур для микроэлектронных устройств и микроэлектронное устройство, содержащее активные структуры
US11414986B1 (en) * 2021-03-02 2022-08-16 Saudi Arabian Oil Company Detecting carbon dioxide leakage in the field
US11840921B2 (en) 2021-03-02 2023-12-12 Saudi Arabian Oil Company Detecting carbon dioxide leakage in the field
RU2764722C1 (ru) * 2021-08-04 2022-01-19 Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника") Способ формирования активных структур для микроэлектронных устройств на кремниевой подложке и микроэлектронное устройство, содержащее сформированные активные структуры
AU2023290505B2 (en) * 2022-06-15 2025-05-22 Swesensi Ab Fet gas sensor device

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KR20090065124A (ko) 2007-12-17 2009-06-22 한국전자통신연구원 실리콘 나노선을 이용한 바이오 센서 및 그 제조 방법
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JP2009229341A (ja) 2008-03-25 2009-10-08 Hiroshima Univ バイオセンサーおよびその製造方法
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US8169006B2 (en) * 2008-11-29 2012-05-01 Electronics And Telecommunications Research Institute Bio-sensor chip for detecting target material
JP5371453B2 (ja) * 2009-01-09 2013-12-18 ミツミ電機株式会社 電界効果トランジスタおよびその製造方法
CN101847581A (zh) * 2009-03-25 2010-09-29 中国科学院微电子研究所 顶栅ZnO多纳米线场效应晶体管的制作方法
WO2011017077A2 (en) * 2009-07-27 2011-02-10 Trustees Of Boston University Nanochannel-based sensor system with controlled sensitivity
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WO2013009875A2 (en) * 2011-07-12 2013-01-17 University Of Pittsburgh----Of The Commonwealth System Of Higher Education pH SENSOR SYSTEMS AND METHODS OF SENSING pH

Also Published As

Publication number Publication date
EP2909617A2 (en) 2015-08-26
RU2015118169A (ru) 2016-12-10
JP2015531491A (ja) 2015-11-02
JP6533465B2 (ja) 2019-06-19
MX2015004671A (es) 2015-08-07
RU2638130C2 (ru) 2017-12-11
CN104737009B (zh) 2018-07-13
CN104737009A (zh) 2015-06-24
WO2014060894A2 (en) 2014-04-24
WO2014060894A3 (en) 2014-07-24
BR112015008202B1 (pt) 2021-02-09
US20160003770A1 (en) 2016-01-07
US10126263B2 (en) 2018-11-13
BR112015008202A2 (pt) 2017-07-04

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