MX349018B - Mejora en la conductividad de celdas solares. - Google Patents
Mejora en la conductividad de celdas solares.Info
- Publication number
- MX349018B MX349018B MX2015013100A MX2015013100A MX349018B MX 349018 B MX349018 B MX 349018B MX 2015013100 A MX2015013100 A MX 2015013100A MX 2015013100 A MX2015013100 A MX 2015013100A MX 349018 B MX349018 B MX 349018B
- Authority
- MX
- Mexico
- Prior art keywords
- solar cell
- metal
- contact
- doped region
- metal layer
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 abstract 10
- 239000002184 metal Substances 0.000 abstract 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Se presentan los métodos y estructuras para formar una región de contacto en una celda solar. La celda solar puede tener un lado frontal orientado hacia el sol durante el funcionamiento normal y un lado posterior opuesto al lado frontal y un sustrato de silicio. El sustrato de silicio puede incluir al menos una región dopada, una capa dieléctrica formada sobre la región dopada. La celda solar puede incluir, además, un primer contacto metálico, tal como un contacto metálico revestido sin electricidad, dentro de una región de contacto a través de una primera capa dieléctrica y en la región dopada. La celda solar puede incluir un metal impreso, tal como aluminio, formado o depositado sobre el primer contacto metálico. La celda solar puede incluir una primera capa metálica que tiene un primer contacto metálico y el primer metal impreso. La celda solar puede incluir una segunda capa metálica, tal como una capa metálica electrorevestida electrolíticamente, formada sobre la primera capa metálica.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361800188P | 2013-03-15 | 2013-03-15 | |
| PCT/US2014/029644 WO2014145009A1 (en) | 2013-03-15 | 2014-03-14 | Conductivity enhancement of solar cells |
| US14/211,353 US10074753B2 (en) | 2013-03-15 | 2014-03-14 | Conductivity enhancement of solar cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MX2015013100A MX2015013100A (es) | 2016-01-22 |
| MX349018B true MX349018B (es) | 2017-07-07 |
Family
ID=51521942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2015013100A MX349018B (es) | 2013-03-15 | 2014-03-14 | Mejora en la conductividad de celdas solares. |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US10074753B2 (es) |
| EP (1) | EP2973734A4 (es) |
| JP (1) | JP6378748B2 (es) |
| KR (1) | KR102242269B1 (es) |
| CN (1) | CN105144398B (es) |
| AU (1) | AU2014233487B2 (es) |
| MX (1) | MX349018B (es) |
| MY (1) | MY175806A (es) |
| SG (1) | SG11201507008UA (es) |
| TW (1) | TWI675491B (es) |
| WO (1) | WO2014145009A1 (es) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9293624B2 (en) * | 2012-12-10 | 2016-03-22 | Sunpower Corporation | Methods for electroless plating of a solar cell metallization layer |
| WO2016072415A1 (ja) * | 2014-11-07 | 2016-05-12 | シャープ株式会社 | 光電変換素子 |
| US9520507B2 (en) * | 2014-12-22 | 2016-12-13 | Sunpower Corporation | Solar cells with improved lifetime, passivation and/or efficiency |
| JP6689757B2 (ja) * | 2015-01-16 | 2020-04-28 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
| JP6701170B2 (ja) * | 2015-03-13 | 2020-05-27 | シャープ株式会社 | 光電変換素子及び光電変換モジュール |
| US9871150B1 (en) * | 2016-07-01 | 2018-01-16 | Sunpower Corporation | Protective region for metallization of solar cells |
| CN106252423B (zh) * | 2016-08-15 | 2017-12-29 | 国网山西省电力公司大同供电公司 | 一种新型光伏电池及其制备方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5426675A (en) * | 1977-07-29 | 1979-02-28 | Matsushita Electric Ind Co Ltd | Manufacture for semiconductor device |
| JPS5929474A (ja) * | 1982-08-11 | 1984-02-16 | Toshiba Corp | 太陽電池 |
| JPS60140882A (ja) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | 半導体製造用ペ−スト材料 |
| US5011565A (en) * | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Dotted contact solar cell and method of making same |
| US5468652A (en) | 1993-07-14 | 1995-11-21 | Sandia Corporation | Method of making a back contacted solar cell |
| EP1182709A1 (en) | 2000-08-14 | 2002-02-27 | IPU, Instituttet For Produktudvikling | A process for depositing metal contacts on a buried grid solar cell and a solar cell obtained by the process |
| US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
| US7339110B1 (en) | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
| US20060060238A1 (en) | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
| US7468485B1 (en) | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
| KR20080075156A (ko) * | 2005-11-07 | 2008-08-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 광전지 콘택 및 배선 형성 방법 |
| GB2442254A (en) | 2006-09-29 | 2008-04-02 | Renewable Energy Corp Asa | Back contacted solar cell |
| US7704352B2 (en) | 2006-12-01 | 2010-04-27 | Applied Materials, Inc. | High-aspect ratio anode and apparatus for high-speed electroplating on a solar cell substrate |
| US20090139568A1 (en) * | 2007-11-19 | 2009-06-04 | Applied Materials, Inc. | Crystalline Solar Cell Metallization Methods |
| JP2009135338A (ja) * | 2007-11-30 | 2009-06-18 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池の製造方法 |
| US7833808B2 (en) * | 2008-03-24 | 2010-11-16 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
| JP2009290105A (ja) * | 2008-05-30 | 2009-12-10 | Sharp Corp | 太陽電池、太陽電池の製造方法および太陽電池モジュール |
| US9150966B2 (en) | 2008-11-14 | 2015-10-06 | Palo Alto Research Center Incorporated | Solar cell metallization using inline electroless plating |
| JP5449849B2 (ja) * | 2009-04-30 | 2014-03-19 | シャープ株式会社 | 太陽電池およびその製造方法 |
| US8779280B2 (en) * | 2009-08-18 | 2014-07-15 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
| JP4678698B2 (ja) * | 2009-09-15 | 2011-04-27 | シャープ株式会社 | 太陽電池モジュールおよびその製造方法 |
| CN101764180A (zh) | 2009-12-31 | 2010-06-30 | 中山大学 | 一种局域前表面场n型太阳电池的制作方法 |
| US20110195542A1 (en) | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Method of providing solar cell electrode by electroless plating and an activator used therein |
| US20110192316A1 (en) * | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Electroless plating solution for providing solar cell electrode |
| KR20120026813A (ko) | 2010-09-10 | 2012-03-20 | 삼성전기주식회사 | 도전성 전극 구조물의 형성 방법 및 이를 포함하는 태양 전지의 제조 방법, 그리고 상기 태양 전지의 제조 방법에 의해 제조된 태양 전지 |
| JP5349523B2 (ja) | 2011-03-31 | 2013-11-20 | 三菱電機株式会社 | 太陽電池の製造方法 |
| KR101198870B1 (ko) * | 2011-11-07 | 2012-11-07 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| US9263601B2 (en) * | 2012-12-21 | 2016-02-16 | Sunpower Corporation | Enhanced adhesion of seed layer for solar cell conductive contact |
-
2014
- 2014-03-14 MY MYPI2015002303A patent/MY175806A/en unknown
- 2014-03-14 KR KR1020157028797A patent/KR102242269B1/ko active IP Right Grant
- 2014-03-14 AU AU2014233487A patent/AU2014233487B2/en active Active
- 2014-03-14 JP JP2016503178A patent/JP6378748B2/ja active Active
- 2014-03-14 MX MX2015013100A patent/MX349018B/es active IP Right Grant
- 2014-03-14 WO PCT/US2014/029644 patent/WO2014145009A1/en active Application Filing
- 2014-03-14 EP EP14763695.5A patent/EP2973734A4/en not_active Withdrawn
- 2014-03-14 US US14/211,353 patent/US10074753B2/en active Active
- 2014-03-14 SG SG11201507008UA patent/SG11201507008UA/en unknown
- 2014-03-14 CN CN201480015814.0A patent/CN105144398B/zh active Active
- 2014-03-17 TW TW103110008A patent/TWI675491B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| SG11201507008UA (en) | 2015-10-29 |
| AU2014233487A1 (en) | 2015-09-17 |
| EP2973734A4 (en) | 2016-04-13 |
| CN105144398A (zh) | 2015-12-09 |
| US10074753B2 (en) | 2018-09-11 |
| JP2016514901A (ja) | 2016-05-23 |
| JP6378748B2 (ja) | 2018-08-22 |
| TW201448236A (zh) | 2014-12-16 |
| MX2015013100A (es) | 2016-01-22 |
| KR102242269B1 (ko) | 2021-04-19 |
| TWI675491B (zh) | 2019-10-21 |
| KR20150132322A (ko) | 2015-11-25 |
| WO2014145009A1 (en) | 2014-09-18 |
| MY175806A (en) | 2020-07-09 |
| US20140261671A1 (en) | 2014-09-18 |
| CN105144398B (zh) | 2019-04-12 |
| EP2973734A1 (en) | 2016-01-20 |
| AU2014233487B2 (en) | 2018-08-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG | Grant or registration |