MX168024B - Dispositivo con un elemento hall que puede integrarse en un circuito integrado - Google Patents

Dispositivo con un elemento hall que puede integrarse en un circuito integrado

Info

Publication number
MX168024B
MX168024B MX002560A MX256086A MX168024B MX 168024 B MX168024 B MX 168024B MX 002560 A MX002560 A MX 002560A MX 256086 A MX256086 A MX 256086A MX 168024 B MX168024 B MX 168024B
Authority
MX
Mexico
Prior art keywords
hall element
ring
integrated
terminal contacts
bottom plate
Prior art date
Application number
MX002560A
Other languages
English (en)
Inventor
Radivoje Popovic
Katalin Solt
Jean-Luc Berchier
Original Assignee
Landis & Gyr Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Landis & Gyr Ag filed Critical Landis & Gyr Ag
Publication of MX168024B publication Critical patent/MX168024B/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Reciprocating, Oscillating Or Vibrating Motors (AREA)
  • Control Of Eletrric Generators (AREA)

Abstract

La presente invención se refiere a dispositivo con un elemento Hall que puede integrarse en un circuito integrado y que posee dos contactos de terminal de sensor y al menos dos contactos de terminal de corriente que están dispuestos en su mayor parte en una superficie del elemento Hall, cuya zona activa está rodeada al menos lateralmente por un anillo que posee un terminal de anillo y es del tipo de conductividad de material opuesto al de la zona activa y los contactos de terminal del elemento Hall, caracterizado porque el elemento Hall está enterrado en el interior del material semiconductor, porque el anillo está ampliado por medio de una placa de cubierta y una placa de fondo de modo que el anillo ampliado rodea a la zona activa del elemento Hall en todas las direcciones, porque los contactos de terminal de sensor y de corriente del elemento Hall atraviesan la placa de cubierta o la placa de fondo hasta establecer contacto eléctrico con la zona activa del elemento Hall, y porque el anillo, la placa de cubierta y la placa de fondo son del mismo tipo de conductividad del material y tienen todos contacto eléctrico entre sí.
MX002560A 1985-05-22 1986-05-20 Dispositivo con un elemento hall que puede integrarse en un circuito integrado MX168024B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH2176/85A CH668147A5 (de) 1985-05-22 1985-05-22 Einrichtung mit einem hallelement in integrierter halbleitertechnologie.

Publications (1)

Publication Number Publication Date
MX168024B true MX168024B (es) 1993-04-28

Family

ID=4227667

Family Applications (1)

Application Number Title Priority Date Filing Date
MX002560A MX168024B (es) 1985-05-22 1986-05-20 Dispositivo con un elemento hall que puede integrarse en un circuito integrado

Country Status (19)

Country Link
US (1) US4673964A (es)
EP (1) EP0202508B1 (es)
JP (1) JPH0728058B2 (es)
KR (1) KR940001299B1 (es)
CN (1) CN86103480B (es)
AT (1) ATE40023T1 (es)
CA (1) CA1249667A (es)
CH (1) CH668147A5 (es)
CS (1) CS274590B2 (es)
DE (1) DE3661788D1 (es)
DK (1) DK164617C (es)
ES (1) ES8707822A1 (es)
HU (1) HU202679B (es)
IN (1) IN166917B (es)
MX (1) MX168024B (es)
NZ (1) NZ216151A (es)
RO (1) RO96966B (es)
WO (1) WO1986007196A1 (es)
YU (1) YU46405B (es)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH668146A5 (de) * 1985-05-22 1988-11-30 Landis & Gyr Ag Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
CH669068A5 (de) * 1986-04-29 1989-02-15 Landis & Gyr Ag Integrierbares hallelement.
JP2754599B2 (ja) * 1988-10-05 1998-05-20 株式会社デンソー 半導体装置
US5119166A (en) * 1990-02-06 1992-06-02 Honeywell Inc. Hall effect element aligned to reduce package-induced offsets
DE4118255A1 (de) * 1991-06-04 1992-12-10 Itt Ind Gmbh Deutsche Monolithisch integrierter sensorschaltkreis in cmos-technik
JP3583458B2 (ja) * 1994-03-09 2004-11-04 株式会社東芝 ホール素子
DE19857275A1 (de) * 1998-12-11 2000-06-15 Johannes V Kluge Integrierbarer Magnetfeldsensor aus Halbleitermaterial
DE10125425A1 (de) * 2001-05-25 2002-12-05 Bosch Gmbh Robert Vorrichtung zur Messung einer B-Komponente eines Magnetfeldes, Magnetfeldsensor und Strommesser
DE10240239A1 (de) * 2002-08-31 2004-03-11 Robert Bosch Gmbh Hochgenauer Hall-Sensor mit mehreren Kontaktpaaren
DE10240404A1 (de) * 2002-09-02 2004-03-18 Austriamicrosystems Ag Hall-Sensor und Verfahren zu dessen Betrieb
JP2006210731A (ja) * 2005-01-28 2006-08-10 Denso Corp ホール素子およびその製造方法
US8174014B2 (en) * 2006-02-16 2012-05-08 California Institute Of Technology Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface
US8089070B2 (en) * 2006-02-16 2012-01-03 California Institute Of Technology Apparatus and method of manufacture for an imager equipped with a cross-talk barrier
US7626377B2 (en) * 2008-02-18 2009-12-01 Honeywell International Inc. Hall-effect device with merged and/or non-merged complementary structure
CH699933A1 (de) * 2008-11-28 2010-05-31 Melexis Technologies Sa Vertikaler Hallsensor.
US20100145660A1 (en) * 2008-12-08 2010-06-10 Robert Bosch Gmbh Mems sensor with built-in self-test
US8114684B2 (en) * 2009-03-02 2012-02-14 Robert Bosch Gmbh Vertical hall effect sensor with current focus
DE102009038938B4 (de) * 2009-08-26 2013-10-10 Austriamicrosystems Ag Verfahren zur Herstellung eines vertikalen Hall-Sensors
CN103703565B (zh) * 2011-09-28 2017-09-01 三菱电机株式会社 半导体装置
US9484525B2 (en) * 2012-05-15 2016-11-01 Infineon Technologies Ag Hall effect device
JP6865579B2 (ja) * 2016-12-28 2021-04-28 エイブリック株式会社 半導体装置
JP7133968B2 (ja) * 2018-04-24 2022-09-09 エイブリック株式会社 半導体装置
EP3794649A1 (en) * 2018-05-18 2021-03-24 LFoundry S.r.l. Vertical hall elements having reduced offset and method of manufacturing thereof
US10424616B1 (en) * 2018-06-20 2019-09-24 Globalfoundries Singapore Pte. Ltd. Integrated circuit devices including vertical and lateral hall elements, and methods for fabricating the same
CN114096865B (zh) * 2019-07-08 2025-04-29 拉芳德利责任有限公司 霍尔集成式传感器和对应的制造工艺
DE102023002342A1 (de) * 2023-06-09 2024-12-12 Tdk-Micronas Gmbh Vertikaler III-V Hallsensor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372070A (en) * 1965-07-30 1968-03-05 Bell Telephone Labor Inc Fabrication of semiconductor integrated devices with a pn junction running through the wafer
US3668439A (en) * 1969-09-11 1972-06-06 Mitsubishi Electric Corp Magnetically operated semiconductor device
US3852802A (en) * 1972-05-01 1974-12-03 Signetics Corp Integrated circuit hall effect device and method
JPS5257792A (en) * 1975-11-07 1977-05-12 Agency Of Ind Science & Technol Photoelectric converting element
US4141026A (en) * 1977-02-02 1979-02-20 Texas Instruments Incorporated Hall effect generator
US4129880A (en) * 1977-07-01 1978-12-12 International Business Machines Incorporated Channel depletion boundary modulation magnetic field sensor
US4253107A (en) * 1978-10-06 1981-02-24 Sprague Electric Company Integrated circuit with ion implanted hall-cell

Also Published As

Publication number Publication date
NZ216151A (en) 1989-08-29
WO1986007196A1 (fr) 1986-12-04
AU5695186A (en) 1986-12-24
ES8707822A1 (es) 1987-08-16
RO96966A (ro) 1989-05-30
YU46405B (sh) 1993-10-20
EP0202508B1 (de) 1989-01-11
DK36087D0 (da) 1987-01-22
JPH0728058B2 (ja) 1995-03-29
KR940001299B1 (ko) 1994-02-18
CS274590B2 (en) 1991-08-13
IN166917B (es) 1990-08-04
DK36087A (da) 1987-01-22
CN86103480A (zh) 1986-11-19
JPS62502928A (ja) 1987-11-19
RO96966B (ro) 1989-06-01
DK164617B (da) 1992-07-20
DE3661788D1 (en) 1989-02-16
ATE40023T1 (de) 1989-01-15
US4673964A (en) 1987-06-16
HUT44363A (en) 1988-02-29
KR880700477A (ko) 1988-03-15
CN86103480B (zh) 1988-10-19
DK164617C (da) 1992-12-07
AU589958B2 (en) 1989-10-26
HU202679B (en) 1991-03-28
CH668147A5 (de) 1988-11-30
EP0202508A1 (de) 1986-11-26
CA1249667A (en) 1989-01-31
ES555166A0 (es) 1987-08-16
CS343486A2 (en) 1991-02-12
YU86286A (en) 1989-12-31

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