ES8707024A1 - Un dispositivo fotovoltaico mejorado - Google Patents

Un dispositivo fotovoltaico mejorado

Info

Publication number
ES8707024A1
ES8707024A1 ES551734A ES551734A ES8707024A1 ES 8707024 A1 ES8707024 A1 ES 8707024A1 ES 551734 A ES551734 A ES 551734A ES 551734 A ES551734 A ES 551734A ES 8707024 A1 ES8707024 A1 ES 8707024A1
Authority
ES
Spain
Prior art keywords
disposed
semiconductor body
low resistance
high resistivity
bus grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES551734A
Other languages
English (en)
Other versions
ES551734A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/699,524 external-priority patent/US4633034A/en
Priority claimed from US06/699,523 external-priority patent/US4633033A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES551734A0 publication Critical patent/ES551734A0/es
Publication of ES8707024A1 publication Critical patent/ES8707024A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

MODIFICACIONES EN UN DISPOSITIVO FOTOVOLTAICO. CONSISTENTES EN UN CUERPO SEMICONDUCTOR (12) QUE INCLUYE UNA PLURALIDAD DE CELULAS FOTOVOLTAICAS (12A, 12B, 12C), HABIENDOSE PREVISTO BAJO LA CELULA (12A) UN SUSTRATO (14) TAL COMO UNA LAMINA DE ACERO INOXIDABLE ELECTRICAMENTE CONDUCTOR; INCLUYENDO CADA UNA DE LAS CELULAS (12A, 12B, 12C) UN CUERPO SEMICONDUCTOR QUE CONTIENE UNA ALEACION DE SILICIO Y CADA UNO DE LOS CUERPOS DE ALEACION INCLUYE UNA REGION O CAPA (16A, 16B, 16C), UNA REGION O CAPA INTRINSECA (18A, 18B, 18C), Y UNA REGION O CAPA (20A, 20B, 20C) SIENDO LA CELULA (12B) UNA CELULA INTERMEDIA A LA QUE PUEDEN AÑADIRSE CELULAS INTERMEDIAS ADICIONALES. TIENE APLICACIONES EN EL CAMPO DE LA ELECTRICIDAD.
ES551734A 1985-02-08 1986-02-07 Un dispositivo fotovoltaico mejorado Expired ES8707024A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/699,524 US4633034A (en) 1985-02-08 1985-02-08 Photovoltaic device and method
US06/699,523 US4633033A (en) 1985-02-08 1985-02-08 Photovoltaic device and method

Publications (2)

Publication Number Publication Date
ES551734A0 ES551734A0 (es) 1987-07-01
ES8707024A1 true ES8707024A1 (es) 1987-07-01

Family

ID=27106451

Family Applications (1)

Application Number Title Priority Date Filing Date
ES551734A Expired ES8707024A1 (es) 1985-02-08 1986-02-07 Un dispositivo fotovoltaico mejorado

Country Status (5)

Country Link
EP (1) EP0190855A3 (es)
JP (1) JPH069250B2 (es)
AU (1) AU5295686A (es)
BR (1) BR8600487A (es)
ES (1) ES8707024A1 (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61268072A (ja) * 1985-05-23 1986-11-27 Mitsubishi Electric Corp 薄膜光電変換素子
EP0236938A3 (de) * 1986-03-11 1989-11-15 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von Dünnschichtsolarzellen aus amorphem Silizium
JP2706113B2 (ja) * 1988-11-25 1998-01-28 工業技術院長 光電変換素子
US5181968A (en) * 1991-06-24 1993-01-26 United Solar Systems Corporation Photovoltaic device having an improved collector grid
EP0603260A4 (en) * 1991-09-13 1994-07-27 United Solar Systems Corp Photovoltaic device including shunt preventing layer and method for the deposition thereof.
US20040261838A1 (en) * 2003-06-25 2004-12-30 Hector Cotal Solar cell with an electrically insulating layer under the busbar
GB2459651A (en) * 2008-04-28 2009-11-04 Quantasol Ltd Concentrator photovoltaic cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492167A (en) * 1966-08-26 1970-01-27 Matsushita Electric Ind Co Ltd Photovoltaic cell and method of making the same
US4117506A (en) * 1977-07-28 1978-09-26 Rca Corporation Amorphous silicon photovoltaic device having an insulating layer
US4239553A (en) * 1979-05-29 1980-12-16 University Of Delaware Thin film photovoltaic cells having increased durability and operating life and method for making same
US4320249A (en) * 1979-08-13 1982-03-16 Shunpei Yamazaki Heterojunction type semiconductor photoelectric conversion device
IN152505B (es) * 1979-08-22 1984-01-28 Ses Inc
US4251286A (en) * 1979-09-18 1981-02-17 The University Of Delaware Thin film photovoltaic cells having blocking layers
US4571448A (en) * 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
IN165761B (es) * 1983-07-28 1990-01-06 Energy Conversion Devices Inc

Also Published As

Publication number Publication date
ES551734A0 (es) 1987-07-01
JPH069250B2 (ja) 1994-02-02
EP0190855A2 (en) 1986-08-13
JPS61222281A (ja) 1986-10-02
AU5295686A (en) 1986-08-14
BR8600487A (pt) 1986-11-18
EP0190855A3 (en) 1986-12-30

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