LU101004B1 - Near infrared detector - Google Patents

Near infrared detector Download PDF

Info

Publication number
LU101004B1
LU101004B1 LU101004A LU101004A LU101004B1 LU 101004 B1 LU101004 B1 LU 101004B1 LU 101004 A LU101004 A LU 101004A LU 101004 A LU101004 A LU 101004A LU 101004 B1 LU101004 B1 LU 101004B1
Authority
LU
Luxembourg
Prior art keywords
heterojunction
layer
organic
inorganic
detector
Prior art date
Application number
LU101004A
Other languages
English (en)
Other versions
LU101004A1 (en
Inventor
Justyna Kocurek
Karolina Miszczyszyn
Grzegorz Babiarz
Michal Dlubek
Original Assignee
Fibrain Spolka Z Ograniczona Odpowiedzialnoscia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fibrain Spolka Z Ograniczona Odpowiedzialnoscia filed Critical Fibrain Spolka Z Ograniczona Odpowiedzialnoscia
Publication of LU101004A1 publication Critical patent/LU101004A1/en
Application granted granted Critical
Publication of LU101004B1 publication Critical patent/LU101004B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B7/00—Indigoid dyes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Claims (4)

. 1 LU101004 BL-5070 ANSPRUCHE
1. Nah-Infrarot-Photodetektor, der Infrarotstrahlung in ein elektrisches Signal umwandelt, bei Raumtemperatur arbeitet und eine Photodiode, die sich aus einer anorganischen Halbleiter-Silizium-Schicht und einer organischen Schicht zusammensetzt, sowie metallische Aluminiumelektroden einsetzt, die elektrische Kontakte zwischen dem Heterolibergang und einem externen Stromkreis bilden, dadurch gekennzeichnet, dass die Vorrichtung eine Schichtstruktur aufweist, in der die anorganische und die organische Schicht einen Hybrid-Heteroübergang formen, der organisches Halbleitermaterial enthält, das zu funktionalisierten Farbstoffen aus der Indigoid-Gruppe gehört, wobei das LUMO-Energieniveau unter -4 eV liegt.
2. Detektor nach Anspruch 1, wobei der Heteroübergang aus einer Schicht von 6,6‘-Dicyanoindigo, die auf dem Siliziumsubstrat abgeschieden ist, hergestellt ist.
3. Detektor nach Anspruch 1, wobei der Heteroübergang aus einer Schicht von 6,6‘-Dinitroindigo, die auf dem Siliziumsubstrat abgeschieden ist, hergestellt ist.
4. Detektor nach Anspruch 1, wobei es vorteilhaft ist, wenn die Indigoide mit den Substituentengruppen in den aromatischen Ringen zu den Nitro- oder Cyanid-Gruppen gehören.
LU101004A 2018-07-31 2018-11-08 Near infrared detector LU101004B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL426520A PL426520A1 (pl) 2018-07-31 2018-07-31 Detektor bliskiej podczerwieni

Publications (2)

Publication Number Publication Date
LU101004A1 LU101004A1 (en) 2020-02-27
LU101004B1 true LU101004B1 (en) 2020-06-24

Family

ID=64664362

Family Applications (1)

Application Number Title Priority Date Filing Date
LU101004A LU101004B1 (en) 2018-07-31 2018-11-08 Near infrared detector

Country Status (7)

Country Link
AT (1) AT521544A3 (de)
FI (1) FI20185973A1 (de)
GB (1) GB2587595A (de)
LU (1) LU101004B1 (de)
PL (1) PL426520A1 (de)
SE (1) SE1851428A1 (de)
WO (1) WO2020027670A1 (de)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009023881A1 (de) 2007-08-23 2009-02-26 Universität Linz Vorrichtung zum umwandeln infraroter strahlung in elektrischen strom
EP2816625A1 (de) 2013-06-21 2014-12-24 Inphotech Sp. z o.o. (Ltd) Vorrichtung zur Transformation von Infrarotstrahlung in elektrischen Strom oder elektrische Spannung bei Raumtemperatur und deren Herstellungsmethode
AT516109A1 (de) 2014-07-29 2016-02-15 Universität Linz Optoelektronischer Infrarotsensor
KR20170136393A (ko) * 2016-06-01 2017-12-11 김일구 인디고를 기반으로 하는 유기 벌크 이종접합 수광소자

Also Published As

Publication number Publication date
GB2587595A (en) 2021-04-07
SE1851428A1 (en) 2020-02-01
AT521544A3 (de) 2020-09-15
LU101004A1 (en) 2020-02-27
PL426520A1 (pl) 2020-02-10
WO2020027670A1 (en) 2020-02-06
FI20185973A1 (en) 2020-02-01
AT521544A2 (de) 2020-02-15

Similar Documents

Publication Publication Date Title
Li et al. Highly sensitive, fast response perovskite photodetectors demonstrated in weak light detection circuit and visible light communication system
Song et al. Interface engineering Ti3C2 MXene/silicon self‐powered photodetectors with high responsivity and detectivity for weak light applications
Tan et al. A black phosphorus carbide infrared phototransistor
Tong et al. Inorganic CsBi 3 I 10 perovskite/silicon heterojunctions for sensitive, self-driven and air-stable NIR photodetectors
KR101695028B1 (ko) 이미지 촬상 디바이스 및 이미지 촬상 장치
JP6047109B2 (ja) 光電変換素子、光センサおよび撮像素子
Xiong et al. Double-side responsive polymer near-infrared photodetectors with transfer-printed electrode
JP6145872B2 (ja) 光電変換層の成膜方法
US20210005816A1 (en) Photoelectric conversion film, solid-state image sensor, and electronic device
KR20150136511A (ko) 광전 변환 소자 및 그것을 사용한 촬상 소자
Yang et al. Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode
Luo et al. Facile Nanogold–Perovskite Enabling Ultrasensitive Flexible Broadband Photodetector with pW Scale Detection Limit
KR101676974B1 (ko) 광전 변환 소자 및 그것을 사용한 촬상 소자
JP2015043362A (ja) 光電変換素子および撮像素子
Han et al. Type-III organic/two-dimensional multi-layered phototransistors with promoted operation speed at the communication band
Martínez‐Goyeneche et al. Narrowband monolithic perovskite–perovskite tandem photodetectors
LU101004B1 (en) Near infrared detector
Eynaud et al. Towards efficient NFA-based selective near-infrared organic photodetectors: impact of thermal annealing of polymer blends
US9786855B2 (en) Micro electro mechanical system (MEMS) based wide-band polymer photo-detector
Kasparavicius et al. Focus-induced photoresponse technique-based NIR photodetectors containing dimeric polymethine dyes
Seo et al. Improvement in photoconductive properties of coumarin 30-evaporated film by fullerene doping for blue-sensitive photoconductors
CN115050845A (zh) 一种基于沟道材料的半导体器件、制备方法和用途
Park et al. Transparent organic photodiodes for high-detectivity CMOS image sensors
Zumuukhorol et al. Effect of a SiO₂ Anti-reflection Layer on the Optoelectronic Properties of Germanium Metal-semiconductor-metal Photodetectors
JP6231435B2 (ja) 固体撮像素子

Legal Events

Date Code Title Description
FG Patent granted

Effective date: 20200624