WO2020027670A1 - Near infrared detector - Google Patents
Near infrared detector Download PDFInfo
- Publication number
- WO2020027670A1 WO2020027670A1 PCT/PL2018/000107 PL2018000107W WO2020027670A1 WO 2020027670 A1 WO2020027670 A1 WO 2020027670A1 PL 2018000107 W PL2018000107 W PL 2018000107W WO 2020027670 A1 WO2020027670 A1 WO 2020027670A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- heterojunction
- layer
- organic
- inorganic
- detector
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000012044 organic layer Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000005855 radiation Effects 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 6
- 125000001424 substituent group Chemical group 0.000 claims abstract description 5
- 125000003118 aryl group Chemical group 0.000 claims abstract description 4
- 230000009286 beneficial effect Effects 0.000 claims abstract description 4
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims abstract description 4
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical group N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000000975 dye Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000003955 hot wall epitaxy Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229940097275 indigo Drugs 0.000 description 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000000348 solid-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B7/00—Indigoid dyes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention provides a near infrared detector to convert infrared radiation from the near infrared range into electrical signal, operating at room temperature and based on a photodiode composed of inorganic semiconductor silicon layer and organic layer, as well as metallic aluminum electrodes, which form electrical contacts between the heterojunction and the external electrical circuit.
- a device is known from the W02009023881A1 / US2010140661A1 to convert infrared radiation to electric current with a photodiode, which contains two semiconductor layers with heterojunction, each of which are connected to an electrode, and one of them is made of a doped inorganic semiconductor.
- the inorganic semiconductor later forms a heterojunction with an organic semiconductor layer and a cooling device is related to the two semiconductor layers. This approach uses however different organic materials.
- An optoelectronic infrared detector is also known from W02016015077A1 / AT516109A1, which consists of two semiconductor layers, one a doped silicon layer and organic semiconductor layer, where each layer is connected to one electrode and the two layers form a heterojunction.
- the organic semiconductor layer is deposited on a nanostructured and/or microstructured surface of the silicon layer and covers the whole aforementioned surface.
- a device is known from EP2816625A1 to convert infrared radiation to electric current or electric voltage, in particular operating at room temperature, which constitutes a hybrid semiconductor photodiode containing a joining of inorganic semiconductor material (for example silicon) and an inorganic semiconductor material, as well as appropriate metal electrodes providing electrical contacts between each of the heterojunction constituent parts and an external electric circuit wherein the organic material is Quinacridone (5,l2-Dihydro- quino[2,3-b]acridine-7,l4-dione) and the top metal electrode connecting the aforementioned organic layer with an external electric layer has area of lmm2 or less.
- the manufacturing process of the aforementioned device is characterized in that the deposition of the organic layer occurs through evaporation in a vacuum chamber with the help of the hot wall/solid phase epitaxy and the evaporation is preceded by the annealing of the aforementioned silicon substrate in chamber in high vacuum at 610° C during 10 minutes.
- Near infrared detector converting infrared radiation into electric signal operating at room temperature and based on a photodiode composed of inorganic semiconductor silicon layer and organic layer, as well as metallic aluminum electrodes, which form electrical contacts between the heterojunction and the external electrical circuit is characterized in that the device a layered structure, where the inorganic and organic layers constitute a hybrid heterojunction, which contains an organic semiconductor material belonging to the functionalized indigoid group, with the LUMO energy level below -4 eV.
- the heterojunction is made of a layer of 6,6- dinitroindigo deposited onto a silicon substrate. It also beneficial to use indigoids with the substituent groups in the aromatic rings belonging to the nitro or cyanide groups.
- the advantage of the present invention is in using new organic compounds - functionalized dyes from the indigoid groups (in particular for example 6,6’-dicyanoindigo or 6,6’ -dinitroindigo) in the process of manufacturing the hybrid near infrared photodetector based on the silicon-organic material heterojunction.
- the invention is characterized in that it used as the organic semiconductor material functionalized dyes from the indigoid group with the LUMO energy level below -4eV.
- Rl denotes the substituent groups, which allow obtaining a compound with the LUMO energy level below -4eV.
- Rl groups can be for example cyan -CN group or nitro -N02 group.
- the near infrared detector is fabricated by depositing a layer of the new organic compound onto a silicon substrate in the Hot Wall epitaxy in a vacuum chamber, preceded by annealing of the substrate in reduced pressure at 6lO°C temperature for 10 minutes.
- Aluminum electrical contacts are made in the vacuum sputterer for metals - the bottom contacts directly onto the silicon substrate, whereas the top contacts onto the deposited organic layer.
- the device has a layered structure, where the inorganic and organic layers form a hybrid heterojunction which is the basis of the photodetector operation and the aluminum contacts enable connecting the layers with an electrical circuits.
- the described device enables detecting of the infrared light at room temperature thanks to the absorption phenomenon in the described heterojunction.
- the device can be used as an infrared detector in fiber optic communications, in sensors or in quality control of various chemical compounds. Since the device is based on a silicon substrate it can be integrated with electronic integrated circuits.
Abstract
Near infrared photodetector converting optical radiation into electrical signal, operating at room temperature and utilizing photodiode composed of inorganic semiconductor silicon layer and organic layer, as well as metallic aluminum electrodes, which form electrical contacts between the heterojunction and the external electrical circuit and having a layered structure, where the inorganic and organic layers constitute a hybrid heterojunction, which contains an organic semiconductor material belonging to the functionalized indigoid group, with the LUMO energy level below -4 eV. The heterojunction is made of a layer of 6,6- dinitroindigo deposited onto a silicon substrate. It also beneficial to use indigoids with the substituent groups in the aromatic rings belonging to the nitro or cyanide groups.
Description
Near infrared detector
The present invention provides a near infrared detector to convert infrared radiation from the near infrared range into electrical signal, operating at room temperature and based on a photodiode composed of inorganic semiconductor silicon layer and organic layer, as well as metallic aluminum electrodes, which form electrical contacts between the heterojunction and the external electrical circuit.
A device is known from the W02009023881A1 / US2010140661A1 to convert infrared radiation to electric current with a photodiode, which contains two semiconductor layers with heterojunction, each of which are connected to an electrode, and one of them is made of a doped inorganic semiconductor. In order to provide beneficial detection it is proposed that the inorganic semiconductor later forms a heterojunction with an organic semiconductor layer and a cooling device is related to the two semiconductor layers. This approach uses however different organic materials.
An optoelectronic infrared detector is also known from W02016015077A1 / AT516109A1, which consists of two semiconductor layers, one a doped silicon layer and organic semiconductor layer, where each layer is connected to one electrode and the two layers form a heterojunction. In order to achieve performance the organic semiconductor layer is deposited on a nanostructured and/or microstructured surface of the silicon layer and covers the whole aforementioned surface.
Also, a device is known from EP2816625A1 to convert infrared radiation to electric current or electric voltage, in particular operating at room temperature, which constitutes a hybrid semiconductor photodiode containing a joining of inorganic semiconductor material (for example silicon) and an inorganic semiconductor material, as well as appropriate metal electrodes providing electrical contacts between each of the heterojunction constituent parts and an external electric circuit wherein the organic material is Quinacridone (5,l2-Dihydro- quino[2,3-b]acridine-7,l4-dione) and the top metal electrode connecting the aforementioned organic layer with an external electric layer has area of lmm2 or less. The manufacturing process of the aforementioned device is characterized in that the deposition of the organic layer occurs through evaporation in a vacuum chamber with the help of the hot wall/solid phase epitaxy and the evaporation is preceded by the annealing of the aforementioned silicon substrate in chamber in high vacuum at 610° C during 10 minutes.
Near infrared detector converting infrared radiation into electric signal operating at room temperature and based on a photodiode composed of inorganic semiconductor silicon layer and organic layer, as well as metallic aluminum electrodes, which form electrical contacts between the heterojunction and the external electrical circuit is characterized in that the device a layered structure, where the inorganic and organic layers constitute a hybrid heterojunction, which contains an organic semiconductor material belonging to the functionalized indigoid group, with the LUMO energy level below -4 eV. The heterojunction is made of a layer of 6,6- dinitroindigo deposited onto a silicon substrate. It also beneficial to use indigoids with the substituent groups in the aromatic rings belonging to the nitro or cyanide groups.
The advantage of the present invention is in using new organic compounds - functionalized dyes from the indigoid groups (in particular for example 6,6’-dicyanoindigo or 6,6’ -dinitroindigo) in the process of manufacturing the hybrid near infrared photodetector based on the silicon-organic material heterojunction. The invention is characterized in that it used as the organic semiconductor material functionalized dyes from the indigoid group with the LUMO energy level below -4eV.
By using the functionalized dyes from the indigoid group with the LUMO energy level below -4eV it is possible to obtain advantageous photodetector sensitivity when illuminated with infrared radiation (higher photocurrent values, better sensitivity).
The subject of the invention is shown in an example embodiment in the drawing, which presents structure of indigo functionalized by introduction of substituent groups into the aromatic rings in the dye structure. Rl denotes the substituent groups, which allow obtaining a compound with the LUMO energy level below -4eV. In particular, Rl groups can be for example cyan -CN group or nitro -N02 group.
An example embodiment of the present invention:
The near infrared detector is fabricated by depositing a layer of the new organic compound onto a silicon substrate in the Hot Wall epitaxy in a vacuum chamber, preceded by annealing of the substrate in reduced pressure at 6lO°C temperature for 10 minutes. Aluminum electrical contacts are made in the vacuum sputterer for metals - the bottom contacts directly onto the silicon substrate, whereas the top contacts onto the deposited organic layer. As an effect of the fabrication, the device has a layered structure, where the
inorganic and organic layers form a hybrid heterojunction which is the basis of the photodetector operation and the aluminum contacts enable connecting the layers with an electrical circuits.
The described device enables detecting of the infrared light at room temperature thanks to the absorption phenomenon in the described heterojunction. The device can be used as an infrared detector in fiber optic communications, in sensors or in quality control of various chemical compounds. Since the device is based on a silicon substrate it can be integrated with electronic integrated circuits.
Claims
1. Near infrared photodetector converting infrared radiation into electrical signal, operating at room temperature and utilizing photodiode composed of inorganic semiconductor silicon later and organic layer, as well as metallic aluminum electrodes, constituting electrical contacts between the heterojunction and an external electrical circuit, characterized in that the device has a layered structure, in which the inorganic and organic layers form a hybrid heterojunction which contains organic semiconductor material belonging to functionalized dyes from the indigoid group with the LUMO energy level below -4 eY.
2. The detector of claim 1, wherein the heterojunction is made of a layer of 6,6’-dicyanoindigo deposited onto the silicon substrate.
3. The detector of claim 1, wherein the heterojunction is made of a layer of 6,6’-dinitroindigo deposited onto the silicon substrate.
4. The detector of claim 1, wherein it is beneficial when the indigoids with the substituent groups in the aromatic rings belonging to the nitro or cyanide groups.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE1851428A SE1851428A1 (en) | 2018-07-31 | 2018-11-08 | Near infrared detector |
| ATA9001/2018A AT521544A3 (en) | 2018-07-31 | 2018-11-08 | Near infrared detector |
| FI20185973A FI20185973A1 (en) | 2018-07-31 | 2018-11-08 | Near infrared detector |
| GB1818842.5A GB2587595A (en) | 2018-07-31 | 2018-11-08 | Near infrared detector |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL426520A PL426520A1 (en) | 2018-07-31 | 2018-07-31 | Near infrared detector |
| PLP.426520 | 2018-07-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2020027670A1 true WO2020027670A1 (en) | 2020-02-06 |
Family
ID=64664362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/PL2018/000107 WO2020027670A1 (en) | 2018-07-31 | 2018-11-08 | Near infrared detector |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT521544A3 (en) |
| FI (1) | FI20185973A1 (en) |
| GB (1) | GB2587595A (en) |
| LU (1) | LU101004B1 (en) |
| PL (1) | PL426520A1 (en) |
| SE (1) | SE1851428A1 (en) |
| WO (1) | WO2020027670A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009023881A1 (en) | 2007-08-23 | 2009-02-26 | Universität Linz | Apparatus for converting of infrared radiation into electrical current |
| EP2816625A1 (en) | 2013-06-21 | 2014-12-24 | Inphotech Sp. z o.o. (Ltd) | Device capable of transforming infrared radiation into electrical current or electrical voltage, working at room temperature, and a method of fabrication of the said device |
| WO2016015077A1 (en) | 2014-07-29 | 2016-02-04 | Universität Linz | Optoelectronic infrared sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170136393A (en) * | 2016-06-01 | 2017-12-11 | 김일구 | Indigo based organic bulk heterojunction photodetectors |
-
2018
- 2018-07-31 PL PL426520A patent/PL426520A1/en unknown
- 2018-11-08 WO PCT/PL2018/000107 patent/WO2020027670A1/en active Application Filing
- 2018-11-08 GB GB1818842.5A patent/GB2587595A/en not_active Withdrawn
- 2018-11-08 SE SE1851428A patent/SE1851428A1/en not_active Application Discontinuation
- 2018-11-08 AT ATA9001/2018A patent/AT521544A3/en not_active Application Discontinuation
- 2018-11-08 LU LU101004A patent/LU101004B1/en active IP Right Grant
- 2018-11-08 FI FI20185973A patent/FI20185973A1/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009023881A1 (en) | 2007-08-23 | 2009-02-26 | Universität Linz | Apparatus for converting of infrared radiation into electrical current |
| US20100140661A1 (en) | 2007-08-23 | 2010-06-10 | Gebhard Matt | Apparatus for converting of infrared radiation into electrical current |
| EP2816625A1 (en) | 2013-06-21 | 2014-12-24 | Inphotech Sp. z o.o. (Ltd) | Device capable of transforming infrared radiation into electrical current or electrical voltage, working at room temperature, and a method of fabrication of the said device |
| WO2016015077A1 (en) | 2014-07-29 | 2016-02-04 | Universität Linz | Optoelectronic infrared sensor |
| AT516109A1 (en) | 2014-07-29 | 2016-02-15 | Universität Linz | Optoelectronic infrared sensor |
Non-Patent Citations (2)
| Title |
|---|
| DEREK VEDRAN ET AL: "Enhanced near-infrared response of nano- and microstructured silicon/organic hybrid photodetectors", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 107, no. 8, 24 August 2015 (2015-08-24), XP012209251, ISSN: 0003-6951, [retrieved on 20150824], DOI: 10.1063/1.4929841 * |
| I. V. KLIMOVICH ET AL: "Design of indigo derivatives as environment-friendly organic semiconductors for sustainable organic electronics", JOURNAL OF MATERIALS CHEMISTRY C, vol. 2, no. 36, 1 January 2014 (2014-01-01), UK, pages 7621 - 7631, XP055579455, ISSN: 2050-7526, DOI: 10.1039/C4TC00550C * |
Also Published As
| Publication number | Publication date |
|---|---|
| AT521544A2 (en) | 2020-02-15 |
| SE1851428A1 (en) | 2020-02-01 |
| PL426520A1 (en) | 2020-02-10 |
| AT521544A3 (en) | 2020-09-15 |
| FI20185973A1 (en) | 2020-02-01 |
| LU101004A1 (en) | 2020-02-27 |
| GB2587595A (en) | 2021-04-07 |
| LU101004B1 (en) | 2020-06-24 |
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