GB2587595A - Near infrared detector - Google Patents
Near infrared detector Download PDFInfo
- Publication number
- GB2587595A GB2587595A GB1818842.5A GB201818842A GB2587595A GB 2587595 A GB2587595 A GB 2587595A GB 201818842 A GB201818842 A GB 201818842A GB 2587595 A GB2587595 A GB 2587595A
- Authority
- GB
- United Kingdom
- Prior art keywords
- heterojunction
- layer
- inorganic
- detector
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract 5
- 239000010703 silicon Substances 0.000 claims abstract 5
- 239000010410 layer Substances 0.000 claims abstract 4
- 239000012044 organic layer Substances 0.000 claims abstract 4
- 239000004065 semiconductor Substances 0.000 claims abstract 4
- 239000000758 substrate Substances 0.000 claims abstract 3
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical group N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 2
- 125000003118 aryl group Chemical group 0.000 claims abstract 2
- 230000009286 beneficial effect Effects 0.000 claims abstract 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims abstract 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims abstract 2
- 230000005855 radiation Effects 0.000 claims abstract 2
- 125000001424 substituent group Chemical group 0.000 claims abstract 2
- 239000000975 dye Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B7/00—Indigoid dyes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
Near infrared photodetector converting optical radiation into electrical signal, operating at room temperature and utilizing photodiode composed of inorganic semiconductor silicon layer and organic layer, as well as metallic aluminum electrodes, which form electrical contacts between the heterojunction and the external electrical circuit and having a layered structure, where the inorganic and organic layers constitute a hybrid heterojunction, which contains an organic semiconductor material belonging to the functionalized indigoid group, with the LUMO energy level below -4 eV. The heterojunction is made of a layer of 6,6- dinitroindigo deposited onto a silicon substrate. It also beneficial to use indigoids with the substituent groups in the aromatic rings belonging to the nitro or cyanide groups.
Claims (4)
1. Near infrared photodetector converting infrared radiation into electrical signal, operating at room temperature and utilizing photodiode composed of inorganic semiconductor silicon later and organic layer, as well as metallic aluminum electrodes, constituting electrical contacts between the heterojunction and an external electrical circuit, characterized in that the device has a layered structure, in which the inorganic and organic layers form a hybrid heterojunction which contains organic semiconductor material belonging to functionalized dyes from the indigoid group with the LUMO energy level below -4 eY.
2. The detector of claim 1, wherein the heterojunction is made of a layer of 6,6â -dicyanoindigo deposited onto the silicon substrate.
3. The detector of claim 1, wherein the heterojunction is made of a layer of 6,6â -dinitroindigo deposited onto the silicon substrate.
4. The detector of claim 1, wherein it is beneficial when the indigoids with the substituent groups in the aromatic rings belonging to the nitro or cyanide groups.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL426520A PL426520A1 (en) | 2018-07-31 | 2018-07-31 | Near infrared detector |
PCT/PL2018/000107 WO2020027670A1 (en) | 2018-07-31 | 2018-11-08 | Near infrared detector |
Publications (1)
Publication Number | Publication Date |
---|---|
GB2587595A true GB2587595A (en) | 2021-04-07 |
Family
ID=64664362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1818842.5A Withdrawn GB2587595A (en) | 2018-07-31 | 2018-11-08 | Near infrared detector |
Country Status (7)
Country | Link |
---|---|
AT (1) | AT521544A3 (en) |
FI (1) | FI20185973A1 (en) |
GB (1) | GB2587595A (en) |
LU (1) | LU101004B1 (en) |
PL (1) | PL426520A1 (en) |
SE (1) | SE1851428A1 (en) |
WO (1) | WO2020027670A1 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100140661A1 (en) | 2007-08-23 | 2010-06-10 | Gebhard Matt | Apparatus for converting of infrared radiation into electrical current |
EP2816625A1 (en) | 2013-06-21 | 2014-12-24 | Inphotech Sp. z o.o. (Ltd) | Device capable of transforming infrared radiation into electrical current or electrical voltage, working at room temperature, and a method of fabrication of the said device |
AT516109A1 (en) | 2014-07-29 | 2016-02-15 | Universität Linz | Optoelectronic infrared sensor |
KR20170136393A (en) * | 2016-06-01 | 2017-12-11 | 김일구 | Indigo based organic bulk heterojunction photodetectors |
-
2018
- 2018-07-31 PL PL426520A patent/PL426520A1/en unknown
- 2018-11-08 LU LU101004A patent/LU101004B1/en active IP Right Grant
- 2018-11-08 WO PCT/PL2018/000107 patent/WO2020027670A1/en active Application Filing
- 2018-11-08 AT ATA9001/2018A patent/AT521544A3/en not_active Application Discontinuation
- 2018-11-08 SE SE1851428A patent/SE1851428A1/en not_active Application Discontinuation
- 2018-11-08 GB GB1818842.5A patent/GB2587595A/en not_active Withdrawn
- 2018-11-08 FI FI20185973A patent/FI20185973A1/en not_active IP Right Cessation
Non-Patent Citations (2)
Title |
---|
DEREK VEDRAN ET AL, "Enhanced near-infrared response of nano- and microstructured silicon/organic hybrid photodetectors", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 107, no. 8, doi:10.1063/1.4929841, ISSN 0003-6951, (20150824), (20150824), * |
I. V. KLIMOVICH, L. I. LESHANSKAYA, S. I. TROYANOV, D. V. ANOKHIN, D. V. NOVIKOV, A. A. PIRYAZEV, D. A. IVANOV, N. N. DREMOVA, P. : "Design of indigo derivatives as environment-friendly organic semiconductors for sustainable organic electronics", JOURNAL OF MATERIALS CHEMISTRY C, ROYAL SOCIETY OF CHEMISTRY, GB, vol. 2, no. 36, 1 January 2014 (2014-01-01), GB, pages 7621 - 7631, XP055579455, ISSN: 2050-7526, DOI: 10.1039/C4TC00550C * |
Also Published As
Publication number | Publication date |
---|---|
LU101004A1 (en) | 2020-02-27 |
PL426520A1 (en) | 2020-02-10 |
AT521544A2 (en) | 2020-02-15 |
AT521544A3 (en) | 2020-09-15 |
SE1851428A1 (en) | 2020-02-01 |
FI20185973A1 (en) | 2020-02-01 |
LU101004B1 (en) | 2020-06-24 |
WO2020027670A1 (en) | 2020-02-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |