SE1851428A1 - Near infrared detector - Google Patents

Near infrared detector

Info

Publication number
SE1851428A1
SE1851428A1 SE1851428A SE1851428A SE1851428A1 SE 1851428 A1 SE1851428 A1 SE 1851428A1 SE 1851428 A SE1851428 A SE 1851428A SE 1851428 A SE1851428 A SE 1851428A SE 1851428 A1 SE1851428 A1 SE 1851428A1
Authority
SE
Sweden
Prior art keywords
heterojunction
layer
near infrared
organic
inorganic
Prior art date
Application number
SE1851428A
Inventor
Grzegorz Babiarz
Justyna Kocurek
Karolina Miszczyszyn
Michal Dlubek
Original Assignee
Fibrain Spolka Z Ograniczona Odpowiedzialnoscia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fibrain Spolka Z Ograniczona Odpowiedzialnoscia filed Critical Fibrain Spolka Z Ograniczona Odpowiedzialnoscia
Publication of SE1851428A1 publication Critical patent/SE1851428A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B7/00—Indigoid dyes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

Near infrared photodetector converting optical radiation into electrical signal, operating at room temperature and utilizing photodiode composed of inorganic semiconductor silicon layer and organic layer, as well as metallic aluminum electrodes, which form electrical contacts between the heterojunction and the external electrical circuit and having a layered structure, where the inorganic and organic layers constitute a hybrid heterojunction, which contains an organic semiconductor material belonging to the functionalized indigoid group, with the LUMO energy level below -4 eV. The heterojunction is made of a layer of 6,6-dinitroindigo deposited onto a silicon substrate. It also beneficial to use indigoids with the substituent groups in the aromatic rings belonging to the nitro or cyanide groups.
SE1851428A 2018-07-31 2018-11-08 Near infrared detector SE1851428A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PL426520A PL426520A1 (en) 2018-07-31 2018-07-31 Near infrared detector
PCT/PL2018/000107 WO2020027670A1 (en) 2018-07-31 2018-11-08 Near infrared detector

Publications (1)

Publication Number Publication Date
SE1851428A1 true SE1851428A1 (en) 2020-02-01

Family

ID=64664362

Family Applications (1)

Application Number Title Priority Date Filing Date
SE1851428A SE1851428A1 (en) 2018-07-31 2018-11-08 Near infrared detector

Country Status (7)

Country Link
AT (1) AT521544A3 (en)
FI (1) FI20185973A1 (en)
GB (1) GB2587595A (en)
LU (1) LU101004B1 (en)
PL (1) PL426520A1 (en)
SE (1) SE1851428A1 (en)
WO (1) WO2020027670A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100140661A1 (en) 2007-08-23 2010-06-10 Gebhard Matt Apparatus for converting of infrared radiation into electrical current
EP2816625A1 (en) 2013-06-21 2014-12-24 Inphotech Sp. z o.o. (Ltd) Device capable of transforming infrared radiation into electrical current or electrical voltage, working at room temperature, and a method of fabrication of the said device
AT516109A1 (en) 2014-07-29 2016-02-15 Universität Linz Optoelectronic infrared sensor
KR20170136393A (en) * 2016-06-01 2017-12-11 김일구 Indigo based organic bulk heterojunction photodetectors

Also Published As

Publication number Publication date
FI20185973A1 (en) 2020-02-01
PL426520A1 (en) 2020-02-10
LU101004B1 (en) 2020-06-24
AT521544A3 (en) 2020-09-15
WO2020027670A1 (en) 2020-02-06
AT521544A2 (en) 2020-02-15
GB2587595A (en) 2021-04-07
LU101004A1 (en) 2020-02-27

Similar Documents

Publication Publication Date Title
Dong et al. Flexible photodetector based on 2D materials: processing, architectures, and applications
Tan et al. A black phosphorus carbide infrared phototransistor
Li et al. High detectivity graphene‐silicon heterojunction photodetector
Cho et al. Sustainable hybrid energy harvester based on air stable quantum dot solar cells and triboelectric nanogenerator
US10333017B2 (en) Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells
Wang et al. Perovskite/Polymer hybrid thin films for high external quantum efficiency photodetectors with wide spectral response from visible to near‐infrared wavelengths
Xia et al. All‐polymer high‐performance photodetector through lamination
Zhou et al. High-temperature single photon detection performance of 4H-SiC avalanche photodiodes
Han et al. Photomultiplication‐Type Organic Photodetectors with Fast Response Enabled by the Controlled Charge Trapping Dynamics of Quantum Dot Interlayer
Wang et al. Broadband organic photodetectors based on ternary blend active layers with enhanced and spectrally flat response
WO2008093834A1 (en) Solid-state imaging device and method for manufacturing the same
Zheng et al. High‐performance solar blind UV photodetectors based on single‐crystal Si/β‐Ga2O3 p‐n heterojunction
CN109904320B (en) Perovskite-organic semiconductor heterojunction-based high-performance phototransistor and preparation method thereof
Yuan et al. Optoelectronic properties of ZnO nanoparticle/pentacene heterojunction photodiode
CN107910442B (en) Floating gate phototransistor and preparation method thereof
JP2011119686A (en) Organic photoelectric conversion element
Yang et al. Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode
CN113644159B (en) Photoelectric detector based on two-dimensional material and preparation method thereof
Biswas et al. Organic tandem solar cells under indoor light illumination
Luo et al. Facile Nanogold–Perovskite Enabling Ultrasensitive Flexible Broadband Photodetector with pW Scale Detection Limit
Li et al. A flexible blue light sensitive organic photodiode with high properties for the applications in low‐voltage‐control circuit and flexion sensors
Jang et al. Self-powered semitransparent/flexible doped-graphene/WS2 vertical-heterostructure photodetectors
JP2015134703A (en) Composition for forming metal oxide-containing layer, and method for producing electronic device
JP2013128001A (en) Photoelectric conversion element, solar cell and solar cell module
Zhu et al. Structural spectral response tuning in organic deep ultraviolet photodetectors

Legal Events

Date Code Title Description
NAV Patent application has lapsed