PL426520A1 - Detektor bliskiej podczerwieni - Google Patents

Detektor bliskiej podczerwieni

Info

Publication number
PL426520A1
PL426520A1 PL426520A PL42652018A PL426520A1 PL 426520 A1 PL426520 A1 PL 426520A1 PL 426520 A PL426520 A PL 426520A PL 42652018 A PL42652018 A PL 42652018A PL 426520 A1 PL426520 A1 PL 426520A1
Authority
PL
Poland
Prior art keywords
heterojunction
organic
layer
silicon substrate
inorganic
Prior art date
Application number
PL426520A
Other languages
English (en)
Inventor
Justyna KOCUREK
Karolina MISZCZYSZYN
Grzegorz Babiarz
Michał DŁUBEK
Original Assignee
Fibrain Spółka Z Ograniczoną Odpowiedzialnością
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fibrain Spółka Z Ograniczoną Odpowiedzialnością filed Critical Fibrain Spółka Z Ograniczoną Odpowiedzialnością
Priority to PL426520A priority Critical patent/PL426520A1/pl
Priority to FI20185973A priority patent/FI20185973A1/en
Priority to SE1851428A priority patent/SE1851428A1/en
Priority to GB1818842.5A priority patent/GB2587595A/en
Priority to ATA9001/2018A priority patent/AT521544A3/de
Priority to LU101004A priority patent/LU101004B1/en
Priority to PCT/PL2018/000107 priority patent/WO2020027670A1/en
Publication of PL426520A1 publication Critical patent/PL426520A1/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B7/00—Indigoid dyes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

Detektor bliskiej podczerwieni przetwarzający promieniowanie podczerwone na sygnał elektryczny, działający w temperaturze pokojowej i oparty na konstrukcji fotodiody złożonej z półprzewodnikowej warstwy nieorganicznej krzemu i warstwy organicznej oraz metalowych elektrod aluminiowych, stanowiących kontakty elektryczne pomiędzy heterozłączem a zewnętrznym obwodem elektrycznym, charakteryzuje się tym, że urządzenie ma konstrukcję warstwową, w której warstwa nieorganiczna i organiczna tworzą hybrydowe heterozłącze, które zawiera półprzewodnikowy materiał organiczny funkcjonalizowanych barwników z grupy indygoidów o energii poziomu LUMO poniżej -4 eV jako materiału organicznego. Heterozłącze wykonane jest z warstwy 6,6'-dicyjanoindygo naparowanej na podłoże krzemowe lub heterozłącze wykonane jest z warstwy 6,6'-dinitroindygo naparowanej na podłoże krzemowe. Ponadto korzystnie kiedy grupa indygoidów z podstawnikami przy pierścieniach aromatycznych będącymi grupami: nitrowymi, cyjanowymi.
PL426520A 2018-07-31 2018-07-31 Detektor bliskiej podczerwieni PL426520A1 (pl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
PL426520A PL426520A1 (pl) 2018-07-31 2018-07-31 Detektor bliskiej podczerwieni
FI20185973A FI20185973A1 (en) 2018-07-31 2018-11-08 Near-infrared detector
SE1851428A SE1851428A1 (en) 2018-07-31 2018-11-08 Near infrared detector
GB1818842.5A GB2587595A (en) 2018-07-31 2018-11-08 Near infrared detector
ATA9001/2018A AT521544A3 (de) 2018-07-31 2018-11-08 Detektor für nahes Infrarot
LU101004A LU101004B1 (en) 2018-07-31 2018-11-08 Near infrared detector
PCT/PL2018/000107 WO2020027670A1 (en) 2018-07-31 2018-11-08 Near infrared detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL426520A PL426520A1 (pl) 2018-07-31 2018-07-31 Detektor bliskiej podczerwieni

Publications (1)

Publication Number Publication Date
PL426520A1 true PL426520A1 (pl) 2020-02-10

Family

ID=64664362

Family Applications (1)

Application Number Title Priority Date Filing Date
PL426520A PL426520A1 (pl) 2018-07-31 2018-07-31 Detektor bliskiej podczerwieni

Country Status (7)

Country Link
AT (1) AT521544A3 (pl)
FI (1) FI20185973A1 (pl)
GB (1) GB2587595A (pl)
LU (1) LU101004B1 (pl)
PL (1) PL426520A1 (pl)
SE (1) SE1851428A1 (pl)
WO (1) WO2020027670A1 (pl)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009023881A1 (de) 2007-08-23 2009-02-26 Universität Linz Vorrichtung zum umwandeln infraroter strahlung in elektrischen strom
EP2816625A1 (en) 2013-06-21 2014-12-24 Inphotech Sp. z o.o. (Ltd) Device capable of transforming infrared radiation into electrical current or electrical voltage, working at room temperature, and a method of fabrication of the said device
AT516109A1 (de) 2014-07-29 2016-02-15 Universität Linz Optoelektronischer Infrarotsensor
KR20170136393A (ko) * 2016-06-01 2017-12-11 김일구 인디고를 기반으로 하는 유기 벌크 이종접합 수광소자

Also Published As

Publication number Publication date
LU101004B1 (en) 2020-06-24
GB2587595A (en) 2021-04-07
SE1851428A1 (en) 2020-02-01
AT521544A3 (de) 2020-09-15
LU101004A1 (en) 2020-02-27
WO2020027670A1 (en) 2020-02-06
FI20185973A1 (en) 2020-02-01
AT521544A2 (de) 2020-02-15

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