AT521544A3 - Detektor für nahes Infrarot - Google Patents
Detektor für nahes Infrarot Download PDFInfo
- Publication number
- AT521544A3 AT521544A3 ATA9001/2018A AT90012018A AT521544A3 AT 521544 A3 AT521544 A3 AT 521544A3 AT 90012018 A AT90012018 A AT 90012018A AT 521544 A3 AT521544 A3 AT 521544A3
- Authority
- AT
- Austria
- Prior art keywords
- layer
- heterojunction
- indigoids
- near infrared
- infrared detector
- Prior art date
Links
- 239000010410 layer Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012044 organic layer Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical group N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 125000003118 aryl group Chemical group 0.000 abstract 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 125000001424 substituent group Chemical group 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B7/00—Indigoid dyes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
Detektor für nahes Infrarot, der Infrarotstrahlung in ein elektrisches Signal umwandelt, bei Raumtemperatur arbeitet und eine Photodiode verwendet, die aus einer anorganischen Halbleiter-Siliziumschicht und einer organischen Schicht sowie metallischen Aluminiumelektroden, die elektrische Kontakte zwischen dem Heteroübergang und dem externen elektrischen Schaltkreis bilden, besteht, ist dadurch gekennzeichnet, dass die Vorrichtung eine Schichtstruktur aufweist, bei der die anorganischen und organischen Schichten einen hybriden Heteroübergang bilden, der ein organisches Halbleitermaterial aus der Gruppe der funktionalisierten lndigoide enthält, mit dem LUMO-Energieniveau unter -4 eV. Der Heteroübergang besteht aus einer Schicht aus 6,6-Dinitroindigo, die auf einem Siliziumsubstrat abgeschieden ist. Es ist auch vorteilhaft, lndigoide mit Substituentengruppen aus den Nitro- oder Cyanidgruppen in den aromatischen Ringen zu verwenden.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL426520A PL426520A1 (pl) | 2018-07-31 | 2018-07-31 | Detektor bliskiej podczerwieni |
PCT/PL2018/000107 WO2020027670A1 (en) | 2018-07-31 | 2018-11-08 | Near infrared detector |
Publications (2)
Publication Number | Publication Date |
---|---|
AT521544A2 AT521544A2 (de) | 2020-02-15 |
AT521544A3 true AT521544A3 (de) | 2020-09-15 |
Family
ID=64664362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ATA9001/2018A AT521544A3 (de) | 2018-07-31 | 2018-11-08 | Detektor für nahes Infrarot |
Country Status (7)
Country | Link |
---|---|
AT (1) | AT521544A3 (de) |
FI (1) | FI20185973A1 (de) |
GB (1) | GB2587595A (de) |
LU (1) | LU101004B1 (de) |
PL (1) | PL426520A1 (de) |
SE (1) | SE1851428A1 (de) |
WO (1) | WO2020027670A1 (de) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170136393A (ko) * | 2016-06-01 | 2017-12-11 | 김일구 | 인디고를 기반으로 하는 유기 벌크 이종접합 수광소자 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100140661A1 (en) | 2007-08-23 | 2010-06-10 | Gebhard Matt | Apparatus for converting of infrared radiation into electrical current |
EP2816625A1 (de) | 2013-06-21 | 2014-12-24 | Inphotech Sp. z o.o. (Ltd) | Vorrichtung zur Transformation von Infrarotstrahlung in elektrischen Strom oder elektrische Spannung bei Raumtemperatur und deren Herstellungsmethode |
AT516109A1 (de) | 2014-07-29 | 2016-02-15 | Universität Linz | Optoelektronischer Infrarotsensor |
-
2018
- 2018-07-31 PL PL426520A patent/PL426520A1/pl unknown
- 2018-11-08 LU LU101004A patent/LU101004B1/en active IP Right Grant
- 2018-11-08 WO PCT/PL2018/000107 patent/WO2020027670A1/en active Application Filing
- 2018-11-08 AT ATA9001/2018A patent/AT521544A3/de not_active Application Discontinuation
- 2018-11-08 SE SE1851428A patent/SE1851428A1/en not_active Application Discontinuation
- 2018-11-08 GB GB1818842.5A patent/GB2587595A/en not_active Withdrawn
- 2018-11-08 FI FI20185973A patent/FI20185973A1/en not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170136393A (ko) * | 2016-06-01 | 2017-12-11 | 김일구 | 인디고를 기반으로 하는 유기 벌크 이종접합 수광소자 |
Non-Patent Citations (2)
Title |
---|
Derek Vedran et al: "Enhanced near-infrared response of nano- and microstructured silicon/organic hybrid photodetectors", APPLIED PHYSICS LETTERS 107, 083302 (2015) [online], 28. August 2015 (28.08.2015), ISSN: 0003-6951, DOI: 10.1063/1.4929841, [ermittelt am 20.07.2020], verfügbar im Internet <URL: https://aip.scitation.org/doi/ 10.1063/1.4929841> * |
Klimovich, I.V. et al: "Design of indigo derivatives as environment-friendly organic semiconductors for sustainable organic electronics", JOURNAL OF MATERIALS CHEMISTRY C, vol. 2, 7621 [online], 19. März 2014 (19.03.2014), [ermittelt am 20.07.2020], verfügbar im Internet <URL: https://www.researchgate.net/publication/ 265139148_Design_of_indigo_derivatives _as_environment-friendly_organic_semiconductors _for_sustainable_organic_electronics> * |
Also Published As
Publication number | Publication date |
---|---|
LU101004A1 (en) | 2020-02-27 |
PL426520A1 (pl) | 2020-02-10 |
AT521544A2 (de) | 2020-02-15 |
SE1851428A1 (en) | 2020-02-01 |
FI20185973A1 (en) | 2020-02-01 |
GB2587595A (en) | 2021-04-07 |
LU101004B1 (en) | 2020-06-24 |
WO2020027670A1 (en) | 2020-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Zeng et al. | Fast, self‐driven, air‐stable, and broadband photodetector based on vertically aligned PtSe2/GaAs heterojunction | |
Ding et al. | Stacking-mode confined growth of 2H-MoTe2/MoS2 bilayer heterostructures for UV–vis–IR photodetectors | |
JP2016039328A5 (de) | ||
EP4269996A3 (de) | Abscheidung einer passivierungsschicht auf eine graphenfolie | |
MY190939A (en) | Solar cells with tunnel dielectrics | |
CN104592704B (zh) | 电气工程用防潮绝缘材料 | |
WO2009041659A1 (ja) | 太陽電池 | |
SG192320A1 (en) | Semiconductor devices with copper interconnects and methods for fabricating same | |
TW201612964A (en) | Semiconductor device and semiconductor device manufacturing method | |
PH12016502441A1 (en) | Passivation of light-receiving surfaces of solar cells with crystalline silicon | |
TWI608639B (zh) | 可撓熱電結構與其形成方法 | |
MY166311A (en) | System and method of semiconductor manufacturing with energy recovery | |
WO2018075117A3 (en) | Preclean methodology for superconductor interconnect fabrication | |
WO2017151233A3 (en) | SECOND GENERATION SUPERCONDUCTING FILAMENTS AND CABLE THEREFOR | |
Maeso et al. | Fast yet quantum‐efficient few‐layer vertical MoS2 photodetectors | |
MY184633A (en) | Titanate interfacial layers in perovskite material devices | |
AT521544A3 (de) | Detektor für nahes Infrarot | |
WO2016014345A3 (en) | Two-terminal electronic devices and their methods of fabrication | |
SG11201807344RA (en) | Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor–on–insulator type | |
TWD185805S (zh) | 熱電轉換模組 | |
SG10201708819SA (en) | Method Of Fabrication Of A Semiconductor Element Comprising A Highly Resistive Substrate | |
MY195061A (en) | A Polymer Composition For Photovoltaic Applications | |
JP2015073094A5 (ja) | コンタクト抵抗測定パターン及びその使用方法、半導体装置 | |
EP3367444A3 (de) | Fotovoltaische solarzelle und verfahren zu deren herstellung | |
WO2014200985A3 (en) | Chemical compositions for semiconductor manufacturing processes and/or methods, apparatus made with same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
REJ | Rejection |
Effective date: 20210515 |