AT521544A3 - Detektor für nahes Infrarot - Google Patents

Detektor für nahes Infrarot Download PDF

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Publication number
AT521544A3
AT521544A3 ATA9001/2018A AT90012018A AT521544A3 AT 521544 A3 AT521544 A3 AT 521544A3 AT 90012018 A AT90012018 A AT 90012018A AT 521544 A3 AT521544 A3 AT 521544A3
Authority
AT
Austria
Prior art keywords
layer
heterojunction
indigoids
near infrared
infrared detector
Prior art date
Application number
ATA9001/2018A
Other languages
English (en)
Other versions
AT521544A2 (de
Original Assignee
Fibrain Spolka Z Ograniczona Odpowiedzialnoscia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fibrain Spolka Z Ograniczona Odpowiedzialnoscia filed Critical Fibrain Spolka Z Ograniczona Odpowiedzialnoscia
Publication of AT521544A2 publication Critical patent/AT521544A2/de
Publication of AT521544A3 publication Critical patent/AT521544A3/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B7/00—Indigoid dyes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

Detektor für nahes Infrarot, der Infrarotstrahlung in ein elektrisches Signal umwandelt, bei Raumtemperatur arbeitet und eine Photodiode verwendet, die aus einer anorganischen Halbleiter-Siliziumschicht und einer organischen Schicht sowie metallischen Aluminiumelektroden, die elektrische Kontakte zwischen dem Heteroübergang und dem externen elektrischen Schaltkreis bilden, besteht, ist dadurch gekennzeichnet, dass die Vorrichtung eine Schichtstruktur aufweist, bei der die anorganischen und organischen Schichten einen hybriden Heteroübergang bilden, der ein organisches Halbleitermaterial aus der Gruppe der funktionalisierten lndigoide enthält, mit dem LUMO-Energieniveau unter -4 eV. Der Heteroübergang besteht aus einer Schicht aus 6,6-Dinitroindigo, die auf einem Siliziumsubstrat abgeschieden ist. Es ist auch vorteilhaft, lndigoide mit Substituentengruppen aus den Nitro- oder Cyanidgruppen in den aromatischen Ringen zu verwenden.
ATA9001/2018A 2018-07-31 2018-11-08 Detektor für nahes Infrarot AT521544A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PL426520A PL426520A1 (pl) 2018-07-31 2018-07-31 Detektor bliskiej podczerwieni
PCT/PL2018/000107 WO2020027670A1 (en) 2018-07-31 2018-11-08 Near infrared detector

Publications (2)

Publication Number Publication Date
AT521544A2 AT521544A2 (de) 2020-02-15
AT521544A3 true AT521544A3 (de) 2020-09-15

Family

ID=64664362

Family Applications (1)

Application Number Title Priority Date Filing Date
ATA9001/2018A AT521544A3 (de) 2018-07-31 2018-11-08 Detektor für nahes Infrarot

Country Status (7)

Country Link
AT (1) AT521544A3 (de)
FI (1) FI20185973A1 (de)
GB (1) GB2587595A (de)
LU (1) LU101004B1 (de)
PL (1) PL426520A1 (de)
SE (1) SE1851428A1 (de)
WO (1) WO2020027670A1 (de)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170136393A (ko) * 2016-06-01 2017-12-11 김일구 인디고를 기반으로 하는 유기 벌크 이종접합 수광소자

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100140661A1 (en) 2007-08-23 2010-06-10 Gebhard Matt Apparatus for converting of infrared radiation into electrical current
EP2816625A1 (de) 2013-06-21 2014-12-24 Inphotech Sp. z o.o. (Ltd) Vorrichtung zur Transformation von Infrarotstrahlung in elektrischen Strom oder elektrische Spannung bei Raumtemperatur und deren Herstellungsmethode
AT516109A1 (de) 2014-07-29 2016-02-15 Universität Linz Optoelektronischer Infrarotsensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170136393A (ko) * 2016-06-01 2017-12-11 김일구 인디고를 기반으로 하는 유기 벌크 이종접합 수광소자

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Derek Vedran et al: "Enhanced near-infrared response of nano- and microstructured silicon/organic hybrid photodetectors", APPLIED PHYSICS LETTERS 107, 083302 (2015) [online], 28. August 2015 (28.08.2015), ISSN: 0003-6951, DOI: 10.1063/1.4929841, [ermittelt am 20.07.2020], verfügbar im Internet <URL: https://aip.scitation.org/doi/ 10.1063/1.4929841> *
Klimovich, I.V. et al: "Design of indigo derivatives as environment-friendly organic semiconductors for sustainable organic electronics", JOURNAL OF MATERIALS CHEMISTRY C, vol. 2, 7621 [online], 19. März 2014 (19.03.2014), [ermittelt am 20.07.2020], verfügbar im Internet <URL: https://www.researchgate.net/publication/ 265139148_Design_of_indigo_derivatives _as_environment-friendly_organic_semiconductors _for_sustainable_organic_electronics> *

Also Published As

Publication number Publication date
FI20185973A1 (en) 2020-02-01
PL426520A1 (pl) 2020-02-10
LU101004B1 (en) 2020-06-24
SE1851428A1 (en) 2020-02-01
WO2020027670A1 (en) 2020-02-06
AT521544A2 (de) 2020-02-15
GB2587595A (en) 2021-04-07
LU101004A1 (en) 2020-02-27

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Effective date: 20210515