SE1851428A1 - Near infrared detector - Google Patents
Near infrared detectorInfo
- Publication number
- SE1851428A1 SE1851428A1 SE1851428A SE1851428A SE1851428A1 SE 1851428 A1 SE1851428 A1 SE 1851428A1 SE 1851428 A SE1851428 A SE 1851428A SE 1851428 A SE1851428 A SE 1851428A SE 1851428 A1 SE1851428 A1 SE 1851428A1
- Authority
- SE
- Sweden
- Prior art keywords
- heterojunction
- layer
- near infrared
- organic
- inorganic
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 239000012044 organic layer Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical group N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 125000003118 aryl group Chemical group 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 125000001424 substituent group Chemical group 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B7/00—Indigoid dyes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL426520A PL426520A1 (pl) | 2018-07-31 | 2018-07-31 | Detektor bliskiej podczerwieni |
PCT/PL2018/000107 WO2020027670A1 (en) | 2018-07-31 | 2018-11-08 | Near infrared detector |
Publications (1)
Publication Number | Publication Date |
---|---|
SE1851428A1 true SE1851428A1 (en) | 2020-02-01 |
Family
ID=64664362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE1851428A SE1851428A1 (en) | 2018-07-31 | 2018-11-08 | Near infrared detector |
Country Status (7)
Country | Link |
---|---|
AT (1) | AT521544A3 (de) |
FI (1) | FI20185973A1 (de) |
GB (1) | GB2587595A (de) |
LU (1) | LU101004B1 (de) |
PL (1) | PL426520A1 (de) |
SE (1) | SE1851428A1 (de) |
WO (1) | WO2020027670A1 (de) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100140661A1 (en) | 2007-08-23 | 2010-06-10 | Gebhard Matt | Apparatus for converting of infrared radiation into electrical current |
EP2816625A1 (de) | 2013-06-21 | 2014-12-24 | Inphotech Sp. z o.o. (Ltd) | Vorrichtung zur Transformation von Infrarotstrahlung in elektrischen Strom oder elektrische Spannung bei Raumtemperatur und deren Herstellungsmethode |
AT516109A1 (de) | 2014-07-29 | 2016-02-15 | Universität Linz | Optoelektronischer Infrarotsensor |
KR20170136393A (ko) * | 2016-06-01 | 2017-12-11 | 김일구 | 인디고를 기반으로 하는 유기 벌크 이종접합 수광소자 |
-
2018
- 2018-07-31 PL PL426520A patent/PL426520A1/pl unknown
- 2018-11-08 SE SE1851428A patent/SE1851428A1/en not_active Application Discontinuation
- 2018-11-08 WO PCT/PL2018/000107 patent/WO2020027670A1/en active Application Filing
- 2018-11-08 FI FI20185973A patent/FI20185973A1/en not_active IP Right Cessation
- 2018-11-08 AT ATA9001/2018A patent/AT521544A3/de not_active Application Discontinuation
- 2018-11-08 GB GB1818842.5A patent/GB2587595A/en not_active Withdrawn
- 2018-11-08 LU LU101004A patent/LU101004B1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
GB2587595A (en) | 2021-04-07 |
LU101004B1 (en) | 2020-06-24 |
AT521544A3 (de) | 2020-09-15 |
AT521544A2 (de) | 2020-02-15 |
PL426520A1 (pl) | 2020-02-10 |
LU101004A1 (en) | 2020-02-27 |
FI20185973A1 (en) | 2020-02-01 |
WO2020027670A1 (en) | 2020-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Dong et al. | Flexible photodetector based on 2D materials: processing, architectures, and applications | |
Tan et al. | A black phosphorus carbide infrared phototransistor | |
Ahmadi et al. | A review on organic–inorganic halide perovskite photodetectors: device engineering and fundamental physics | |
Li et al. | High detectivity graphene‐silicon heterojunction photodetector | |
Cho et al. | Sustainable hybrid energy harvester based on air stable quantum dot solar cells and triboelectric nanogenerator | |
US10333017B2 (en) | Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells | |
Wang et al. | Perovskite/Polymer hybrid thin films for high external quantum efficiency photodetectors with wide spectral response from visible to near‐infrared wavelengths | |
Zhou et al. | High-temperature single photon detection performance of 4H-SiC avalanche photodiodes | |
Xia et al. | All‐polymer high‐performance photodetector through lamination | |
Cai et al. | Highly sensitive broadband single‐walled carbon nanotube photodetectors enhanced by separated graphene nanosheets | |
WO2008093834A1 (ja) | 固体撮像装置およびその製造方法 | |
Wang et al. | Broadband organic photodetectors based on ternary blend active layers with enhanced and spectrally flat response | |
Han et al. | Photomultiplication‐Type Organic Photodetectors with Fast Response Enabled by the Controlled Charge Trapping Dynamics of Quantum Dot Interlayer | |
US10199589B2 (en) | Photoelectric conversion element and image sensor using same | |
CN109904320B (zh) | 一种基于钙钛矿-有机半导体异质结的高性能光电晶体管及其制备方法 | |
Zheng et al. | High‐performance solar blind UV photodetectors based on single‐crystal Si/β‐Ga2O3 p‐n heterojunction | |
Yuan et al. | Optoelectronic properties of ZnO nanoparticle/pentacene heterojunction photodiode | |
CN107910442B (zh) | 悬浮栅光电晶体管及其制备方法 | |
JP2011119686A (ja) | 有機光電変換素子 | |
Yang et al. | Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode | |
CN113644159B (zh) | 一种基于二维材料的光电探测器及其制备方法 | |
Biswas et al. | Organic tandem solar cells under indoor light illumination | |
Li et al. | A flexible blue light sensitive organic photodiode with high properties for the applications in low‐voltage‐control circuit and flexion sensors | |
JP2015134703A (ja) | 金属酸化物含有層形成用組成物、及び電子デバイスの製造方法 | |
JP2013128001A (ja) | 光電変換素子、太陽電池及び太陽電池モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAV | Patent application has lapsed |