KR980005325A - 반사굴절 광학계 - Google Patents

반사굴절 광학계 Download PDF

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Publication number
KR980005325A
KR980005325A KR1019970021291A KR19970021291A KR980005325A KR 980005325 A KR980005325 A KR 980005325A KR 1019970021291 A KR1019970021291 A KR 1019970021291A KR 19970021291 A KR19970021291 A KR 19970021291A KR 980005325 A KR980005325 A KR 980005325A
Authority
KR
South Korea
Prior art keywords
optical system
refractive
imaging optical
imaging
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019970021291A
Other languages
English (en)
Korean (ko)
Inventor
야스히로 오무라
Original Assignee
고노 시게오
니콘 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고노 시게오, 니콘 코포레이션 filed Critical 고노 시게오
Publication of KR980005325A publication Critical patent/KR980005325A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019970021291A 1996-06-14 1997-05-28 반사굴절 광학계 Withdrawn KR980005325A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP153770/1996 1996-06-14
JP8153770A JPH103039A (ja) 1996-06-14 1996-06-14 反射屈折光学系

Publications (1)

Publication Number Publication Date
KR980005325A true KR980005325A (ko) 1998-03-30

Family

ID=15569767

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970021291A Withdrawn KR980005325A (ko) 1996-06-14 1997-05-28 반사굴절 광학계

Country Status (3)

Country Link
EP (1) EP0816892A3 (https=)
JP (1) JPH103039A (https=)
KR (1) KR980005325A (https=)

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US5969882A (en) * 1997-04-01 1999-10-19 Nikon Corporation Catadioptric optical system
EP1079253A4 (en) 1998-04-07 2004-09-01 Nikon Corp DEVICE AND PROCESS FOR PROJECTION EXPOSURE, AND OPTICAL SYSTEM WITH REFLECTION AND REFRACTION
EP0964307A3 (en) 1998-06-08 2001-09-05 Nikon Corporation Projection exposure apparatus and method
DE69933973T2 (de) * 1998-07-29 2007-06-28 Carl Zeiss Smt Ag Katadioptrisches optisches system und damit ausgestattete belichtungsvorrichtung
US6451507B1 (en) 1998-08-18 2002-09-17 Nikon Corporation Exposure apparatus and method
US7151592B2 (en) 1999-02-15 2006-12-19 Carl Zeiss Smt Ag Projection system for EUV lithography
US6985210B2 (en) 1999-02-15 2006-01-10 Carl Zeiss Smt Ag Projection system for EUV lithography
USRE42118E1 (en) * 1999-02-15 2011-02-08 Carl-Zeiss-Smt Ag Projection system for EUV lithography
EP1094350A3 (en) 1999-10-21 2001-08-16 Carl Zeiss Optical projection lens system
JP2001160530A (ja) 1999-12-01 2001-06-12 Nikon Corp ステージ装置及び露光装置
KR100854052B1 (ko) 1999-12-29 2008-08-26 칼 짜이스 에스엠테 아게 인접한 비구면 렌즈 표면을 구비한 투사 대물 렌즈
WO2002044786A2 (en) 2000-11-28 2002-06-06 Carl Zeiss Smt Ag Catadioptric projection system for 157 nm lithography
TW538256B (en) 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
JP2001257143A (ja) 2000-03-09 2001-09-21 Nikon Corp ステージ装置及び露光装置、並びにデバイス製造方法
JP2001267226A (ja) 2000-03-21 2001-09-28 Nikon Corp 駆動装置及び露光装置、並びにデバイス及びその製造方法
US20030155882A1 (en) 2002-02-19 2003-08-21 Nikon Corporation Anti-gravity mount with air and magnets
US7190527B2 (en) 2002-03-01 2007-03-13 Carl Zeiss Smt Ag Refractive projection objective
US7154676B2 (en) 2002-03-01 2006-12-26 Carl Zeiss Smt A.G. Very-high aperture projection objective
SG135052A1 (en) 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP2157480B1 (en) 2003-04-09 2015-05-27 Nikon Corporation Exposure method and apparatus, and device manufacturing method
SG141426A1 (en) 2003-04-10 2008-04-28 Nikon Corp Environmental system including vacuum scavange for an immersion lithography apparatus
KR101431938B1 (ko) 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6995833B2 (en) 2003-05-23 2006-02-07 Canon Kabushiki Kaisha Projection optical system, exposure apparatus, and device manufacturing method
KR101476087B1 (ko) 2003-06-19 2014-12-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
EP2843472B1 (en) 2003-07-08 2016-12-07 Nikon Corporation Wafer table for immersion lithography
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
TWI360158B (en) 2003-10-28 2012-03-11 Nikon Corp Projection exposure device,exposure method and dev
TWI385414B (zh) 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
TWI609410B (zh) 2004-02-06 2017-12-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
KR101250155B1 (ko) 2004-03-25 2013-04-05 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR20160085375A (ko) 2004-05-17 2016-07-15 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20140140648A (ko) 2005-05-12 2014-12-09 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
US20080073563A1 (en) 2006-07-01 2008-03-27 Nikon Corporation Exposure apparatus that includes a phase change circulation system for movers
US7830046B2 (en) 2007-03-16 2010-11-09 Nikon Corporation Damper for a stage assembly
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
US20130255414A1 (en) 2010-09-09 2013-10-03 Nikon Corporation Parallel Linkage and Actuator Motor Coil Designs for Tube Carrier
US8572518B2 (en) 2011-06-23 2013-10-29 Nikon Precision Inc. Predicting pattern critical dimensions in a lithographic exposure process
US9030057B2 (en) 2011-06-24 2015-05-12 Nikon Corporation Method and apparatus to allow a plurality of stages to operate in close proximity

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5140459A (en) * 1989-08-29 1992-08-18 Texas Instruments Apparatus and method for optical relay and reimaging
JPH04367213A (ja) * 1991-06-13 1992-12-18 Orc Mfg Co Ltd 投影型露光装置
EP0527043B1 (en) * 1991-08-05 1997-01-22 Nikon Corporation Catadioptric reduction projection optical system
US5212593A (en) * 1992-02-06 1993-05-18 Svg Lithography Systems, Inc. Broad band optical reduction system using matched multiple refractive element materials
DE69315314T2 (de) * 1992-12-24 1998-03-19 Nippon Kogaku Kk Verkleinerndes katadioptrisches Projektionssystem
US5537260A (en) * 1993-01-26 1996-07-16 Svg Lithography Systems, Inc. Catadioptric optical reduction system with high numerical aperture

Also Published As

Publication number Publication date
EP0816892A2 (en) 1998-01-07
EP0816892A3 (en) 1999-06-09
JPH103039A (ja) 1998-01-06

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St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000