KR980005325A - 반사굴절 광학계 - Google Patents

반사굴절 광학계 Download PDF

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Publication number
KR980005325A
KR980005325A KR1019970021291A KR19970021291A KR980005325A KR 980005325 A KR980005325 A KR 980005325A KR 1019970021291 A KR1019970021291 A KR 1019970021291A KR 19970021291 A KR19970021291 A KR 19970021291A KR 980005325 A KR980005325 A KR 980005325A
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KR
South Korea
Prior art keywords
optical system
refractive
imaging optical
imaging
reflective
Prior art date
Application number
KR1019970021291A
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English (en)
Inventor
야스히로 오무라
Original Assignee
고노 시게오
니콘 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고노 시게오, 니콘 코포레이션 filed Critical 고노 시게오
Publication of KR980005325A publication Critical patent/KR980005325A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

자외선 파장영역에서 큰 개구수(NA)를 달성하고, 광학계 전체가 실용적인 크기이며 쿼터 마이크론 단위의 해상도를 가지고, 광학계의 각 구성 부재를 소형화한 반사굴절광학계를 제공한다. 광선이 진행하는 순서대로 굴절 부재에 의해 구성된 제 1 결상 광학계 S1, 오목경 M1 및 굴절 부재에 의해 구성된 제 2 결상 광학계 S2를 포함하며, 반도체 소자의 패턴을 기판상으로 투영하는 반사 굴절 광학계에 있어서, 상기 제 1 결상 광학계를 구성하는 굴절 부재 및 상기 제 2 결상 광학계를 구성하는 굴절 부재 중 적어도 굴절 부재는 비구면(非球面)을 가지는 반사 굴절 광학계를 제공한다.

Description

반사 굴절 광학계
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 제 1 실시예의 반사 굴절 광학계의 구성도이다.

Claims (5)

  1. 광선이 진행되는 순서대로, 굴절 부재에 의해 구성된 제 1 결상 광학계, 오목경 및 굴절 부재에 의해 구성된 제 2 결상 광학계를 포함하여, 반도체 소자의 패턴을 기판상으로 투영하는 반사 굴절 광학계에 있어서, 상기 제 1 결상 광학계를 구성하는 굴절 부재 및 상기 제 2 결상 광학계를 구성하는 굴절 부재 중 적어도 하나의 굴절 부재는, 비구면을 가지는 것을 특징으로 하는 반사 굴절광학계.
  2. 제 1 항에 있어서, 상기 제 1 결상 광학계는 광선이 한 번만 통과하는 제 1 렌즈군 및 광선이 왕복하는 제 2 렌즈군으로 구성되며, 상기 제 2 렌즈군중 가장 오목경에 가까운 렌즈는 음부(負)의 렌즈이며, 상기 제 2 렌즈군을 사출한 광선은 상기 제 2 결상 광학계에 입사되기 전에 상기 반도체 소자의 패턴을 한 번 결상하는 것을 특징으로 하는 반사 굴절 광학계.
  3. 제 1 항 또는 제 2 항에 있어서, 상기 제 1 결상 광학계와 상기 제 2 결상 광학계 사이에 광로 편향 부재를 배치하는 것을 특징으로 하는 반사 굴절 광학계.
  4. 제 1 항 내지 제 3 항중 어느 한 항에 있어서, 상기 제 1 결상 광학계를 구성하는 굴절 부재 및 상기 제 2 결상 광학계를 구성하는 굴절 부재는 석영 및 형석, 또는 그중 어느 하나의 초석(硝)재로 구성되는 것을 특징으로 하는 반사 굴절 광학계.
  5. 제 1 항 내지 제 4 항중 어느 한 항에 있어서, 상기 오목경은 비구면(非球面) 형상인 것을 특징으로 하는 반사 굴절 광학계.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970021291A 1996-06-14 1997-05-28 반사굴절 광학계 KR980005325A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP153770/1996 1996-06-14
JP8153770A JPH103039A (ja) 1996-06-14 1996-06-14 反射屈折光学系

Publications (1)

Publication Number Publication Date
KR980005325A true KR980005325A (ko) 1998-03-30

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ID=15569767

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970021291A KR980005325A (ko) 1996-06-14 1997-05-28 반사굴절 광학계

Country Status (3)

Country Link
EP (1) EP0816892A3 (ko)
JP (1) JPH103039A (ko)
KR (1) KR980005325A (ko)

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Also Published As

Publication number Publication date
EP0816892A2 (en) 1998-01-07
JPH103039A (ja) 1998-01-06
EP0816892A3 (en) 1999-06-09

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